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S. Komori

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Published work

3 published item(s)

preprint2021arXiv

Growth, strain and spin orbit torques in epitaxial NiMnSb films sputtered on GaAs

We report current-induced spin torques in epitaxial NiMnSb films on a commercially available epi-ready GaAs substrate. The NiMnSb was grown by co-sputtering from three targets using optimised parameter. The films were processed into micro-scale bars to perform current-induced spin-torque measurements. Magnetic dynamics were excited by microwave currents and electric voltages along the bars were measured to analyse the symmetry of the current-induced torques. We found that the extracted symmetry of the spin torques matches those expected from spin-orbit interaction in a tetragonally distorted half-Heusler crystal. Both field-like and damping-like torques are observed in all the samples characterised, and the efficiency of the current-induced torques is comparable to that of ferromagnetic metal/heavy metal bilayers.

preprint2020arXiv

Spin-transport in superconductors

Spin-transport in superconductors is a subject of fundamental and technical importance with the potential for applications in superconducting-based cryogenic memory and logic. Research in this area is rapidly intensifying with recent discoveries establishing the field of superconducting spintronics. In this perspective we provide an overview of the experimental state-of-the-art with a particular focus on local and nonlocal spin-transport in superconductors, and propose device schemes to demonstrate the viability of superconducting spin-based devices.

preprint2010arXiv

Different Evolution of Intrinsic Gap in Kondo Semiconductors SmB6 and YbB12

Dependence of the spectral functions on temperature and rare-earth substitution was examined in detail for Kondo semiconductor alloys Sm1-xEuxB6 and Yb1-xLuxB12 by bulk-sensitive photoemission. It is found that the 4f lattice coherence and intrinsic (small) energy gap are robust for SmB6 against the Eu substitution up to x = 0.15 while both collapse by Lu substitution already at x = 0.125 for YbB12. Our results suggest that the mechanism of the intrinsic gap formation is different between SmB6 and YbB12 although they were so far categorized in the same kind of Kondo semiconductors.