Researcher profile

S. K. Rai

S. K. Rai contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - UnverifiedVerification L1Unclaimed author
2works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2023arXiv

Exploring the substrate-driven morphological changes in Nd0.6Sr0.4MnO3 thin films

Manganite thin films are promising candidates for studying the strongly correlated electron systems. Understanding the growth-and morphology-driven changes in the physical properties of manganite thin films is vital for their applications in oxitronics. This work reports the morphological, structural, and electrical transport properties of nanostructured Nd0.6Sr0.4MnO3 (NSMO) thin films fabricated using the pulsed laser deposition technique. Scanning electron microscopy (SEM) imaging of the thin films revealed two prominent surface morphologies: a granular and a unique crossed-nano-rod-type morphology. From X-ray diffraction (XRD) and atomic force microscopy (AFM) analysis, we found that the observed nanostructures resulted from altered growth modes occurring on the terraced substrate surface. Furthermore, investigations on the electrical-transport properties of thin films revealed that the films with crossed-nano-rod type morphology showed a sharp resistive transition near the metal-to-insulator transition (MIT). An enhanced temperature coefficient of resistance (TCR) of up to one order of magnitude was also observed compared to the films with granular morphology. Such enhancement in TCR % by tuning the morphology makes these thin films promising candidates for developing oxide-based temperature sensors and detectors.

preprint2009arXiv

Absolute anticommutativity of the nilpotent symmetries in the Hamiltonian formalism: free Abelian 2-form gauge theory

The celebrated Curci-Ferrari (CF) type of restrictions are invoked to obtain the off-shell nilpotent and absolutely anticommuting (anti-) BRST as well as (anti-) co-BRST symmetry transformations in the context of the Lagrangian description of the physical four (3 + 1)-dimensional (4D) free Abelian 2-form gauge theory. We show that the above CF type conditions, which turn out to be the secondary constraints of the theory, remain invariant with respect to the time-evolution of the above 2-form gauge system in the Hamiltonian formulation. This time-evolution invariance (i) physically ensures the linear independence of the BRST versus anti-BRST as well as co-BRST versus anti-co-BRST symmetry transformations, and (ii) provides a logical reason behind the imposition of the above CF type restrictions in the proof of the absolute anticommutativity of the off-shell nilpotent (anti-) BRST as well as (anti-) co-BRST symmetry transformations.