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S. Joseph Poon

S. Joseph Poon appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

9 published item(s)

preprint2022arXiv

Interfacial Mixing Effect in a Promising Skyrmionic Material: Ferrimagnetic Mn$_4$N

Interfacial mixing of elements is a well-known phenomenon found in thin film deposition. For thin-film magnetic heterostructures, interfacial compositional inhomogeneities can have drastic effects on the resulting functionalities. As such, care must be taken to characterize the compositional and magnetic properties of thin films intended for device use. Recently, ferrimagnetic Mn$_4$N thin films have drawn considerable interest due to exhibiting perpendicular magnetic anisotropy, high domain-wall mobility, and good thermal stability. In this study, we employed X-ray photoelectron spectroscopy (XPS) and polarized neutron reflectometry (PNR) measurements to investigate the interfaces of an epitaxially-grown MgO/Mn$_4$N/Pt trilayer deposited at 450 $^{\circ}$C. XPS revealed the thickness of elemental mixing regions of near 5 nm at both interfaces. Using PNR, we found that these interfaces exhibit essentially zero net magnetization at room temperature. Despite the high-temperature deposition at 450 $^{\circ}$C, the thickness of mixing regions is comparable to those observed in magnetic films deposited at room temperature. Micromagnetic simulations show that this interfacial mixing should not deter the robust formation of small skyrmions, consistent with a recent experiment. The results obtained are encouraging in terms of the potential of integrating thermally stable Mn$_4$N into future spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion

Half-Heusler compounds (space group Fm3m) has garnered increasing attention in recent years in the thermoelectric community. Three decades ago, refractory RNiSn half-Heusler compounds (R represents refractory metals such as Hf, Zr, Ti) were found to be narrow-gap semiconductors with large Seebeck coefficients in 100s of micro-volt per Kelvin. Today, half-Heusler (HH) compounds have emerged as promising thermoelectric materials in the intermediate temperature range (400-800oC). HH materials are endowed with good thermal stability and scalability. Thermoelectric n-p modules based on HH materials demonstrate conversion efficiency near 10% and power density output near 9 W/cm2. The objective of this article is to present a historical account of the research and development of thermoelectric half-Heusler compounds. Particularly, there have been notable achievements since 2012 thanks to the emergence of new approaches. As a result, ZT has risen from ~1 to 1.5. The various advances made since the early 1990s to the present are recounted by categorizing half-Heusler materials into three generations (Gen): Gen-1 Gen-2, and Gen-3 HH materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Micromagnetic Simulation of Amorphous Ferrimagnetic TbFeCo Films with Exchange Coupled Nanophases

Amorphous ferrimagnetic TbFeCo thin films are found to exhibit exchange bias effect near the compensation temperature by magnetic hysteresis loop measurement. The observed exchange anisotropy is believed to originate from the exchange interaction between the two nanoscale amorphous phases distributed within the films. Here, we present a computational model of phase-separated TbFeCo using micromagnetic simulation. Two types of cells with different Tb concentration are distributed within the simulated space to obtain a heterogeneous structure consisting of two nanoscale amorphous phases. Each cell contains separated Tb and FeCo components, forming two antiferromagnetically coupled sublattices. Using this model, we are able to show the existence of exchange bias effect, and the shift in hysteresis loops is in agreement with experiment. The micromagnetic model developed herein for a heterogeneous magnetic material may also account for some recent measurements of exchange bias effect in crystalline films.

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preprint2015arXiv

Exchange Bias and Bistable Magneto-Resistance States in Amorphous TbFeCo thin Films

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy (STEM), and energy dispersive spectroscopy (EDS) mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

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preprint2014arXiv

First Principles Calculation of Elastic Moduli of Early-Late Transition Metal Alloys

Motivated by interest in the elastic properties of high strength amorphous metals, we examine the elastic properties of select crystalline phases. Using first principles methods, we calculate elastic moduli in various chemical systems containing transition metals, specifically early (Ta,W) and late (Co,Ni). Theoretically predicted alloy elastic properties are verified for Ni-Ta by comparison with experimental measurements using resonant ultrasound spectroscopy. Comparison of our computed elastic moduli with effective medium theories shows that alloying leads to enhancement of bulk moduli relative to averages of the pure elements, and considerable deviation of predicted and computed shear moduli. Specifically, we find an enhancement of bulk modulus relative to effective medium theory and propose a candidate system for high strength, ductile amorphous alloys. Trends in the elastic properties of chemical systems are analyzed using force constants, electronic densities of state and Crystal Overlap Hamilton Populations. We interpret our findings in terms of the electronic structure of the alloys.

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preprint2013arXiv

Amorphous GdFeCo Films Exhibiting Large and Tunable Perpendicular Magnetic Anisotropy

We report the compositional and temperature dependence of magnetic compensation in amorphous GdFeCo films. Magnetic compensation is attributed to the competition between antiferromagnetic coupling of rare-earth with transition-metal (TM) ions and ferromagnetic interaction between the TM ions. The low-Gd region from 20 to 34 at. % was found to exhibit compensation phenomena characterized by a low saturation magnetization and perpendicular magnetic anisotropy (PMA) near the compensation temperature. Compensation temperature was not observed in previously unreported high-Gd region from 52 to 59 at. %, in qualitative agreement with results from recent model calculations. However, low magnetization was achieved at room temperature, accompanied by a large PMA with coercivity reaching ~6.6 kOe. The observed perpendicular magnetic anisotropy of amorphous GdFeCo films probably has a structural origin consistent with certain aspects of the atomic-scale anisotropy. Our findings have broadened the composition range of transition metal-rare earth alloys for designing PMA films, making it attractive for tunable magnetic anisotropy in nanoscale devices.

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preprint2013arXiv

Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface

Epitaxial growth of Co20Fe50Ge30 thin film on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of CoFeGe well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy (PMA) was achieved in the MgO/CoFeGe/MgO structure with an optimized magnetic anisotropy energy density (K) of 3 106 erg/cm3. The magnetic anisotropy is found to depend strongly on the thickness of the MgO and CoFeGe layers, indicating that the PMA of CoFeGe is contributed by the interfacial anisotropy between CoFeGe and MgO. With reported low damping constant, CoFeGe films are promising spintronic materials for achieving low switching current.

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preprint2013arXiv

Significant ZT Enhancement in p-type Ti(Co,Fe)Sb-InSb Nanocomposites via a Synergistic High Mobility Electron Injection Energy filtering and Boundary Scattering Approach

It has been demonstrated that InSb nanoinclusions, which are formed in situ, can simultaneously improve all three individual thermoelectric properties of the n-type half Heusler compound (Ti,Zr,Hf)(Co,Ni)Sb [Xie et al., Acta Mater. 58, 4795 (2010)]. In the work presented herein, we have adopted the same approach to the p-type half Heusler compound Ti(Co,Fe)Sb. The results of resistivity, Seebeck coefficient, thermal conductivity, and Hall coefficient measurements indicate that the combined high mobility electron injection, low energy electron filtering, and boundary scattering, again, lead to a simultaneous improvement of all three individual thermoelectric properties: enhanced Seebeck coefficient and electrical conductivity as well as reduced lattice thermal conductivity. A figure of merit of ZT=0.33 was attained at 900 K for the sample containing 1 atomic percent InSb nanoinclusions, a 450 percent improvement over the nanoinclusion-free sample. This represents a rare case that the same nanostructuring approach successfully works for both p-type and n-type thermoelectric materials of the same class, hence pointing to a promising materials design route for higher performance half-Heusler materials in the future and hopefully will realize similar improvement in TE devices based on such half Heusler alloys.

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preprint2013arXiv

Structural and magnetic properties of Cr-diluted CoFeB

The crystallization process and the magnetization of Cr diluted CoFeB was investigated in both ribbon samples and thin film samples with Cr content up to 30 at. %. A primary crystallization of bcc phase from an amorphous precursor in ribbon samples was observed when the annealing temperature rose to between 421 oC and 456 oC, followed by boron segregation at temperatures between 518 oC and 573 oC. The two onset crystallization temperatures showed strong dependences on both Cr and B concentrations. The impact of Cr concentration on the magnetic properties including a reduced saturation magnetization and an enhanced coercive field was also observed. The magnetizations of both ribbon samples and thin film samples were well fitted using the generalized Slater-Pauling curve with modified moments for B (-0.94 μB) and Cr (-3.6 μB). Possible origins of the enhanced coercive field were also discussed. We also achieved a damping parameter in CoFeCrB thin films at the same level as Co40Fe40B20, much lower than the value reported for CoFeCrB films previously. The results suggest a possible advantage of CoFeCrB in reducing the critical switching current density in Spin Transfer Torque Random Access Memory (STT-RAM).

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