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S. Joseph Poon

S. Joseph Poon contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2022arXiv

Interfacial Mixing Effect in a Promising Skyrmionic Material: Ferrimagnetic Mn$_4$N

Interfacial mixing of elements is a well-known phenomenon found in thin film deposition. For thin-film magnetic heterostructures, interfacial compositional inhomogeneities can have drastic effects on the resulting functionalities. As such, care must be taken to characterize the compositional and magnetic properties of thin films intended for device use. Recently, ferrimagnetic Mn$_4$N thin films have drawn considerable interest due to exhibiting perpendicular magnetic anisotropy, high domain-wall mobility, and good thermal stability. In this study, we employed X-ray photoelectron spectroscopy (XPS) and polarized neutron reflectometry (PNR) measurements to investigate the interfaces of an epitaxially-grown MgO/Mn$_4$N/Pt trilayer deposited at 450 $^{\circ}$C. XPS revealed the thickness of elemental mixing regions of near 5 nm at both interfaces. Using PNR, we found that these interfaces exhibit essentially zero net magnetization at room temperature. Despite the high-temperature deposition at 450 $^{\circ}$C, the thickness of mixing regions is comparable to those observed in magnetic films deposited at room temperature. Micromagnetic simulations show that this interfacial mixing should not deter the robust formation of small skyrmions, consistent with a recent experiment. The results obtained are encouraging in terms of the potential of integrating thermally stable Mn$_4$N into future spintronic devices.

preprint2019arXiv

Half-Heusler Compounds: Promising Materials For Mid-To-High Temperature Thermoelectric Conversion

Half-Heusler compounds (space group Fm3m) has garnered increasing attention in recent years in the thermoelectric community. Three decades ago, refractory RNiSn half-Heusler compounds (R represents refractory metals such as Hf, Zr, Ti) were found to be narrow-gap semiconductors with large Seebeck coefficients in 100s of micro-volt per Kelvin. Today, half-Heusler (HH) compounds have emerged as promising thermoelectric materials in the intermediate temperature range (400-800oC). HH materials are endowed with good thermal stability and scalability. Thermoelectric n-p modules based on HH materials demonstrate conversion efficiency near 10% and power density output near 9 W/cm2. The objective of this article is to present a historical account of the research and development of thermoelectric half-Heusler compounds. Particularly, there have been notable achievements since 2012 thanks to the emergence of new approaches. As a result, ZT has risen from ~1 to 1.5. The various advances made since the early 1990s to the present are recounted by categorizing half-Heusler materials into three generations (Gen): Gen-1 Gen-2, and Gen-3 HH materials.

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