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S. Ichinokura

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con

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preprint2021arXiv

Van Hove Singularity and Lifshitz Transition in Thickness-Controlled Li-Intercalated Graphene

We demonstrate a new method to control the Fermi level around the van Hove singularity (VHS) in Li-intercalated graphene on the SiC substrate. By angle-resolved photoemission spectroscopy, we observed a clear Lifshitz transition in the vicinity of the VHS by increasing the graphene thickness. This behavior is unexpected in a free-standing Li-intercalated graphene model. The calculation including the substrate suggests that the surface state stabilizes the Fermi level around the VHS of the Dirac bands via hybridization. In addition, we found that a sizable Schottky barrier is formed between graphene and the substrate. These properties allow us to explore the electronic phase diagram around the VHS by controlling the thickness and electric field in the device condition.

preprint2019arXiv

Two-dimensional conducting layer on SrTiO $_{3}$ surface induced by hydrogenation

We found that a surface state induced by hydrogenation on the surface of SrTiO $_{3}$ (001) (STO) did not obey the rigid band model, which was confirmed by in situ electrical resistivity measurements in ultrahigh vacuum. With exposure of atomic hydrogen on the STO, a new surface state (H-induced donor state, HDS) appears within the bulk band gap (an in-gap state), which donates electrons thermally activated to the bulk conduction band, resulting in downward bending of the bulk bands beneath the surface. The doped electrons flow through the space-charge layer in two-dimensional manner parallel to the surface. The observed semiconducting behavior in the temperature dependence of electronic transport is explained by the thermal activation of carriers. The HDS and the bulk conduction band are non-rigid in energy position; they come closer with increasing the hydrogen adsorption. Eventually the HDS saturates its position around 88 meV below the bottom of the bulk conduction band. The sheet conductivity, accordingly, also saturates at 1.95 $\pm$ 0.02 $μ$ S/sq. with increasing hydrogen adsorption, corresponding to completion of the hydrogenation of the surface.

preprint2015arXiv

Direct Observation of Superconductivity in Calcium-Intercalated Bilayer Graphene by in situ Electrical Transport Measurements

We report the superconductivity in Ca-intercalated bilayer graphene C $_6$ CaC $_6$ , the thinnest limit of Ca graphite intercalation compound. We performed \textit{in situ} electrical transport measurements on pristine bilayer graphene, C $_6$ LiC $_6$ and C $_6$ CaC $_6$ fabricated on SiC substrate under zero and non-zero magnetic field. While both bilayer graphene and C $_6$ LiC $_6$ show non-superconducting behavior, C $_6$ CaC $_6$ exhibits the superconductivity with transition temperature ( $T_{\rm c}$ ) of 4.0 K. The observed $T_{\rm c}$ in C $_6$ CaC $_6$ and the absence of superconductivity in C $_6$ LiC $_6$ show a good agreement with the theoretical prediction, suggesting the importance of a free-electron-like metallic band at the Fermi level to drive the superconductivity.

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S. Ichinokura

Research overview

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3 publications

Van Hove Singularity and Lifshitz Transition in Thickness-Controlled Li-Intercalated Graphene

Two-dimensional conducting layer on SrTiO $_{3}$ surface induced by hydrogenation

Direct Observation of Superconductivity in Calcium-Intercalated Bilayer Graphene by in situ Electrical Transport Measurements

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S. Ichinokura

Research overview

Is this your work?

3 publications

Van Hove Singularity and Lifshitz Transition in Thickness-Controlled Li-Intercalated Graphene

Two-dimensional conducting layer on SrTiO3_{3}3​ surface induced by hydrogenation

Direct Observation of Superconductivity in Calcium-Intercalated Bilayer Graphene by in situ Electrical Transport Measurements

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Two-dimensional conducting layer on SrTiO $_{3}$ surface induced by hydrogenation