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Researcher profile

I. Matsuda

I. Matsuda contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2020arXiv

Electronic structure of a 3x3-ordered silicon layer on Al(111)

Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac cone-like dispersion curves. The Si layer on Al(111) can be a model system of Xene to realize the massless electronic system through the overlayer-substrate interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Surface-state Coulomb repulsion accelerates a metal-insulator transition in topological semimetal nanofilms

The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predicted for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we reveal an unexpected mechanism of the transition by high-resolution angle-resolved photoelectron spectroscopy combined with theoretical calculations. Anomalous evolution and degeneracy of quantized energy levels indicate that increased Coulomb repulsion from the surface states deforms a quantum confinement potential with decreasing thickness. The potential deformation drastically modulates spatial distributions of quantized wave functions, which leads to acceleration of the transition even beyond the original QSE picture. This discovery establishes a complete picture of the long-discussed problem in bismuth and highlights the new class of size effects dominating nanoscale transport in systems with metallic surface states.

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preprint2019arXiv

Two-dimensional conducting layer on SrTiO$_{3}$ surface induced by hydrogenation

We found that a surface state induced by hydrogenation on the surface of SrTiO$_{3}$(001) (STO) did not obey the rigid band model, which was confirmed by in situ electrical resistivity measurements in ultrahigh vacuum. With exposure of atomic hydrogen on the STO, a new surface state (H-induced donor state, HDS) appears within the bulk band gap (an in-gap state), which donates electrons thermally activated to the bulk conduction band, resulting in downward bending of the bulk bands beneath the surface. The doped electrons flow through the space-charge layer in two-dimensional manner parallel to the surface. The observed semiconducting behavior in the temperature dependence of electronic transport is explained by the thermal activation of carriers. The HDS and the bulk conduction band are non-rigid in energy position; they come closer with increasing the hydrogen adsorption. Eventually the HDS saturates its position around 88 meV below the bottom of the bulk conduction band. The sheet conductivity, accordingly, also saturates at 1.95$\pm$ 0.02 $μ$ S/sq. with increasing hydrogen adsorption, corresponding to completion of the hydrogenation of the surface.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Ultrafast unbalanced electron distributions in quasicrystalline 30° twisted bilayer graphene

Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle Θ has become an important degree of freedom for exploring novel states of matters, i.e. two-dimensional superconductivity ( Θ = 1.1°)6, 7 and a two-dimensional quasicrystal (Θ = 30°)8, 9. We report herein experimental observation on the photo-induced ultrafast dynamics of Dirac fermions in the quasicrystalline 30° twisted bilayer graphene (QCTBG). We discover that hot carriers are asymmetrically distributed between the two graphene layers, followed by the opposing femtosecond relaxations, by using time- and angle-resolved photoemission spectroscopy. The key mechanism involves the differing carrier transport between layers and the transient doping from the substrate interface. The ultrafast dynamics scheme continues after the Umklapp scattering, which is induced by the incommensurate interlayer stacking of the quasi-crystallinity. The dynamics in the atomic layer opens the possibility of new applications and creates interdisciplinary links in the optoelectronics of van der Waals crystals.

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