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S. Hosseinabadi

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Published work

3 published item(s)

preprint2013arXiv

Universality and conformal non-invariance in self-affine rough surfaces

We show numerically that the roughness and growth exponents of a wide range of rough surfaces, such as random deposition with relaxation (RDR), ballistic deposition (BD) and restricted solid-on-solid model (RSOS), are independent of the underlying regular (square, triangular, honeycomb) or random (Voronoi) lattices. In addition we show that the universality holds also at the level of statistical properties of the iso-height lines on different lattices. This universality is revealed by calculating the fractal dimension, loop correlation exponent and the length distribution exponent of the individual contours. We also indicate that the hyperscaling relations are valid for the iso-height lines of all the studied Gaussian and non-Gaussian self-affine rough surfaces. Finally using the direct method of Langlands et.al we show that the contour lines of the rough surfaces are not conformally invariant except when we have simple Gaussian free field theory with zero roughness exponent.

preprint2012arXiv

Geometrical exponents of contour loops on synthetic multifractal rough surfaces: multiplicative hierarchical cascade p-model

In this paper, we study many geometrical properties of contour loops to characterize the morphology of synthetic multifractal rough surfaces, which are generated by multiplicative hierarchical cascading processes. To this end, two different classes of multifractal rough surfaces are numerically simulated. As the first group, singular measure multifractal rough surfaces are generated by using the $p$ model. The smoothened multifractal rough surface then is simulated by convolving the first group with a so-called Hurst exponent, $H^*$ . The generalized multifractal dimension of isoheight lines (contours), $D(q)$, correlation exponent of contours, $x_l$, cumulative distributions of areas, $ξ$, and perimeters, $η$, are calculated for both synthetic multifractal rough surfaces. Our results show that for both mentioned classes, hyperscaling relations for contour loops are the same as that of monofractal systems. In contrast to singular measure multifractal rough surfaces, $H^*$ plays a leading role in smoothened multifractal rough surfaces. All computed geometrical exponents for the first class depend not only on its Hurst exponent but also on the set of $p$ values. But in spite of multifractal nature of smoothened surfaces (second class), the corresponding geometrical exponents are controlled by $H^*$, the same as what happens for monofractal rough surfaces.

preprint2010arXiv

Solid on Solid Model for Surface Growth in 2+1 Dimensions

We analyze in detail the Solid-On-Solid model (SOS) for growth processes on a square substrate in 2+1 dimensions. By using the Markovian surface properties, we introduce an alternative approach for determining the roughness exponent of a special type of SOS model-the Restricted-Solid-On-Solid model (RSOS)- in 2+1 dimensions. This model is the SOS model with the additional restriction that the height difference must be S=1. Our numerical results show that the behaviour of the SOS model in 2+1 dimensions for approximately $S\geq S_{\times}\sim 8$ belongs to the two different universality classes: during the initial time stage, $t< t_{\times}$ it belongs to the Random-Deposition (RD) class, while for $t_{\times}<t\ll t_{sat}$ it belongs to the Kardar-Parisi-Zhang (KPZ) universality class. The crossover time ($t_{\times}$) is related to S via a power law with exponent, $η=1.99\pm0.02$ at $1σ$ confidence level which is the same as that for 1+1 dimensions reported in Ref. \cite{e1}. Using the structure function, we compute the roughness exponent. In contrast to the growth exponent, the roughness exponent does not show crossover for different values of S. The scaling exponents of the structure function for fixed values of separation distance versus S in one and two space dimensions are $ξ=0.92\pm0.05$ and $ξ=0.86\pm0.05$ at $1σ$ confidence level, respectively.