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Researcher profile

S. Hellmüller

S. Hellmüller contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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Published work

4 published item(s)

preprint2015arXiv

Spin pairs in a weakly coupled many-electron quantum dot

We report the observation of an unusually large number of consecutive spin pairs in a weakly coupled many-electron GaAs/AlGaAs quantum dot. The pairs are identified due to pairwise parallel shifts of Coulomb resonances in a perpendicular magnetic field. Using a nearby quantum point contact for time-resolved charge detection, the tunneling rates are investigated as a function of gate voltage and magnetic field. We compare our experimental data to a single-level transport model and discuss possible reasons for deviations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications

We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity is found to be consistent with its DC counterpart in the full gate voltage range. Furthermore, in order to access the potential of high-frequency sensing for applications, we demonstrate time-dependent gating in solution with nanosecond time resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Optimization of sample-chip design for stub-matched radio-frequency reflectometry measurements

A radio-frequency (rf) matching circuit with an in situ tunable varactor diode used for rf reflectometry measurements in semiconductor nanostructures is investigated and used to optimize the sample-specific chip design. The samples are integrated in a 2-4 GHz stub-matching circuit consisting of a waveguide stub shunted to the terminated coplanar waveguide. Several quantum point contacts fabricated on a GaAs/AlGaAs heterostructure with different chip designs are compared. We show that the change of the reflection coefficient for a fixed change in the quantum point contact conductance can be enhanced by a factor of 3 compared to conventional designs by a suitable electrode geometry.

0 citations0 reviewsNo code linkedOpen access