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Researcher profile

S. H. Tessmer

S. H. Tessmer contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.supr-con

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Published work

3 published item(s)

preprint2020arXiv

Dirac surface states in superconductors: a dual topological proximity effect

In this paper we present scanning tunneling microscopy of Bi$_2$Se$_3$ with superconducting Nb deposited on the surface. We find that the topologically protected surface states of the Bi$_2$Se$_3$ leak into the superconducting over-layer, suggesting a dual topological proximity effect. Coupling between theses states and the Nb states leads to an effective pairing mechanism for the surface states, leading to a modified model for a topological superconductor in these systems. This model is consistent with fits between the experimental data and the theory.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Scanning-probe spectroscopy of semiconductor donor molecules

Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum structure of small numbers of dopant atoms in semiconductors[1-3]. Although dopant properties are well-understood with respect to bulk semiconductors, new questions arise in nanosystems. For example, the quantum energy levels of dopants will be affected by the proximity of nanometer-scale electrodes. Moreover, because shallow donors and acceptors are analogous to hydrogen atoms, experiments on small numbers of dopants have the potential to be a testing ground for fundamental questions of atomic and molecular physics, such as the maximum negative ionization of a molecule with a given number of positive ions[4,5]. Electron tunneling spectroscopy through isolated dopants has been observed in transport studies[6,7]. In addition, Geim and coworkers identified resonances due to two closely spaced donors, effectively forming donor molecules[8]. Here we present capacitance spectroscopy measurements of silicon donors in a gallium-arsenide heterostructure using a scanning probe technique[9,10]. In contrast to the work of Geim et al., our data show discernible peaks attributed to successive electrons entering the molecules. Hence this work represents the first addition spectrum measurement of dopant molecules. More generally, to the best of our knowledge, this study is the first example of single-electron capacitance spectroscopy performed directly with a scanning probe tip[9].

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preprint1999arXiv

Imaging of Low Compressibility Strips in the Quantum Hall Liquid

Using Subsurface Charge Accumulation scanning microscopy we image strips of low compressibility corresponding to several integer Quantum Hall filling factors. We study in detail the strips at Landau level filling factors $ν=$ 2 and 4. The observed strips appear significantly wider than predicted by theory. We present a model accounting for the discrepancy by considering a disorder-induced nonzero density of states in the cyclotron gap.

0 citations0 reviewsNo code linkedOpen access