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S. Gladchenko

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Published work

2 published item(s)

preprint2014arXiv

Landau-Zener population control and dipole measurement of a two level system bath

Tunneling two level systems (TLS), present in dielectrics at low temperatures, have been recently studied for fundamental understanding and superconducting device development. According to a recent theory by Burin \textit{et al.}, the TLS bath of any amorphous dielectric experiences a distribution of Landau-Zener transitions if exposed to simultaneous fields. In this experiment we measure amorphous insulating films at millikelvin temperatures with a microwave field and a swept electric field bias using a superconducting resonator. We find that the maximum dielectric loss per microwave photon with the simultaneous fields is approximately the same as that in the equilibrium state, in agreement with the generic material theory. In addition, we find that the loss depends on the fields in a way which allows for the separate extraction of the TLS bath dipole moment and density of states. This method allows for the study of the TLS dipole moment in a diverse set of disordered films, and provides a technique for continuously inverting their population.

preprint2013arXiv

Evidence for hydrogen two-level systems in atomic layer deposition oxides

Two-level system (TLS) defects in dielectrics are known to limit the performance of electronic devices. We study TLS using millikelvin microwave loss measurements of three atomic layer deposited (ALD) oxide films--crystalline BeO ($\rm{c-BeO}$), amorphous $\rm{Al_2O_3}$ ($\rm{a-Al_2O_3}$), and amorphous $\rm{LaAlO_3}$ ($\rm{a-LaAlO_3}$)--and interpret them with room temperature characterization measurements. We find that the bulk loss tangent in the crystalline film is 6 times higher than in the amorphous films. In addition, its power saturation agrees with an amorphous distribution of TLS. Through a comparison of loss tangent data to secondary ion mass spectrometry (SIMS) impurity analysis we find that the dominant loss in all film types is consistent with hydrogen-based TLS. In the amorphous films excess hydrogen is found at the ambient-exposed surface, and we extract the associated hydrogen-based surface loss tangent. Data from films with a factor of 40 difference in carbon impurities revealed that carbon is currently a negligible contributor to TLS loss.