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Researcher profile

S. Gabani

S. Gabani contributes to research discovery and scholarly infrastructure.

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cond-mat.str-el

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Published work

4 published item(s)

preprint2022arXiv

Hall effect anisotropy in the paramagnetic phase of Ho0.8Lu0.2B12 induced by dynamic charge stripes

A detailed study of charge transport in the paramagnetic phase of Ho0.8Lu0.2B12 strongly correlated antiferromagnet was carried out at temperatures 1.9-300 K in magnetic fields up to 80 kOe. Four mono-domain single crystals with different orientation of normal vectors to the lateral surface of Ho0.8Lu0.2B12 samples were investigated in order to establish the changes in Hall effect due to the anisotropy, induced by (i) the electronic phase separation (dynamic charge stripes) and (ii) formation of the disordered cage-glass state below 60 K. It was demonstrated that in magnetic fields above 40 kOe directed along the 001 and 110 axes in fcc crystals a considerable intrinsic anisotropic positive component Ranxy appears in addition to the ordinary negative Hall resistivity contribution. The relation Ranxy prop. Ranxx 1.7 was found between anomalous components of the resistivity tensor for H along 001 below 60 K, and the power law Ranxy prop. Ranxx 0.83 was detected for the orientation H along 110 at temperatures T below TS about 15 K. It is argued that below TS about 15 K the anomalous odd Ranxy(T) and even Ranxx(T) parts of the resistivity tensor may be interpreted in terms of formation of a large size clusters in the filamentary structure of fluctuating charges (stripes). We assume that these Ranxy(001) and Ranxy(110) components represent the intrinsic (Berry phase contribution) and extrinsic (skew scattering) mechanism, respectively. An additional ferromagnetic contribution to anomalous Hall effect (AHE) for both ordinary and anisotropic components in Hall signal was registered and attributed to the effect of magnetic polarization of 5d states (ferromagnetic nano-domains) in the conduction band of Ho0.8Lu0.2B12.

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preprint2020arXiv

Suppression of indirect exchange and symmetry breaking in antiferromagnetic metal with dynamic charge stripes

Precise angle-resolved magnetoresistance (ARM) measurements are applied to reveal the origin for the lowering of symmetry in electron transport and the emergence of a huge number of magnetic phases in the ground state of antiferromagnetic metal HoB12 with fcc crystal structure. By analyzing of the polar H-theta-phi magnetic phase diagrams of this compound reconstructed from the experimental ARM data we argue that non-equilibrium electron density oscillations (dynamic charge stripes) are responsible for the suppression of the indirect RKKY exchange along <110> directions between the nearest neighboring magnetic moments of Ho3+ ions in this strongly correlated electron system.

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preprint2014arXiv

Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions

The magnetoresistance (MR) $Δρ/ρ$ of cage-glass compound Ho$_x$Lu$_{1-x}$B$_{12}$ with various concentration of magnetic holmium ions ($x$$\leq$0.5) has been studied in detail concurrently with magnetization M(T) and Hall effect investigations on high quality single crystals at temperatures 1.9-120 K and in magnetic field up to 80 kOe. The undertaken analysis of $Δρ/ρ$ allows us to conclude that the large negative magnetoresistance (nMR) observed in vicinity of Neel temperature is caused by scattering of charge carriers on magnetic clusters of Ho$^{3+}$ ions, and that these nanosize regions with AF exchange inside may be considered as short range order AF domains. It was shown that the Yosida relation $-Δρ/ρ$$\sim$$M^2$ provides an adequate description of the nMR effect for the case of Langevin type behavior of magnetization. Moreover, a reduction of Ho-ion effective magnetic moments in the range 3-9$μ_B$ was found to develop both with temperature lowering and under the increase of holmium content. A phenomenological description of the large positive quadratic contribution $Δρ/ρ$$\sim$$μ_D^2 H^2$ which dominates in Ho$_x$Lu$_{1-x}$B$_{12}$ in the intermediate temperature range 20-120 K allows to estimate the drift mobility exponential changes $μ_D$$\sim$$T^{-a}$ with $a$=1.3-1.6 depending on Ho concentration. An even more comprehensive behavior of magnetoresistance has been found in the AF state of Ho$_x$Lu$_{1-x}$B$_{12}$ where an additional linear positive component was observed and attributed to charge carriers scattering on the spin density wave (SDW). High precision measurements of $Δρ/ρ=f(H,T)$ have allowed us also to reconstruct the magnetic H-T phase diagram of Ho$_{0.5}$Lu$_{0.5}$B$_{12}$ and to resolve its magnetic structure as a superposition of 4f (based on localized moments) and 5d (based on SDW) components.

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preprint2014arXiv

Searching for a quantum critical point in YbCu5-xAux

Structural, magnetic, transport and thermal properties of YbCu5-xAux alloys with Au concentration between the limit of structural stability of AuBe5 type at x = 0.4 up to x = 0.7 are reported. The outstanding features of this system are: i) the constant and record high values of Cm /T 7J/molK^2 below a characteristic temperature T*, ranging between 150 mK and 350 mK. ii) A power law thermal dependence dependence Cm/T(T>T*)=A/T^q, with q = 1.3 +/- 0.1, and iii) an arising incoherent electronic scattering observed in the resistivity at T < 1K for x < 0.6 despite the fact that Yb magnetic atoms are placed in a lattice. Magnetic frustration, originated in the tetrahedral distribution of Yb atoms, appears as the responsible of the exotic behavior of this system.

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