Researcher profile

S. Caramazza

S. Caramazza contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2016arXiv

Polarization analysis of first- and second-order Raman scattering from MoTe$_2$ single crystal

We report on Raman experiments performed on a single crystal MoTe$_2$ sample. The system belongs to the wide family of Transition Metal Dichalcogenides which includes several of the most interesting two dimensional materials for both basic and applied physics. Measurements were performed in the standard basal plane configuration, by placing the $ab$ plane of the crystal perpendicular to the wave vector $k_i$ of the incident beam to explore the in plane vibrational modes, and in the edge plane configuration with $k_i$ perpendicular to the crystal $c$ axis, thus mainly exciting out-of-plane modes. For both configurations we performed a polarization-dependent Raman study and we were able to provide a complete assignment of the observed first- and second-order Raman peaks fully exploiting the polarization selection rules. Present findings are in complete agreement with previous first-order Raman data whereas a thorough analysis of the second-order Raman bands, either in basal- or edge-plane configurations, provides new information and a precise assignment of these spectral structures. In particular, we have observed Raman active modes of the $M$ point of the Brillouin zone previously predicted by ab-initio calculations and ascribed to either combination or overtone but never previously measured.

preprint2016arXiv

Raman phonon spectrum of the Dzyaloshinskii-Moriya helimagnet Ba2CuGe2O7

The Raman spectrum of Ba2CuGe2O7, a tetragonal insulator which develops Dzyaloshinsky- Moriya helical magnetism below TN = 3.2 K, has been detected at temperatures varying from 300 to 80 K in a single crystal, with the radiation polarized either in the ab plane or along the c axis of its tetragonal cell. 29 phonon lines out of the 35 allowed by the Raman selection rules for the present geometry were observed, and their vibrational frequencies were found in overall good agreement with those provided by shell-model calculations. Together with the previous report on the infrared-active phonons [A. Nucara et al., Phys. Rev. B 90, 014304 (2014)] the present study provides an exhaustive description, both experimental and theoretical, of the lattice dynamics in Ba2CuGe2O7.

preprint2014arXiv

Two-band conductivity of a FeSe$_{0.5}$Te$_{0.5}$ film by reflectance measurements in the terahertz and infrared range

We report an infrared spectroscopy study of a 200 nm thick FeSe$_{0.5}$Te$_{0.5}$ film grown on LaAlO$_3$ with T$_c$=13.7 K. We analyze the 20 K normal state absolute reflectance R$_N$ measured over a broad infrared range and the reflectance ratio R$_S$/R$_N$, R$_S$ being the superconducting state reflectance, measured at 6 K in the terahertz range down to 12 cm$^{-1}$. We show that the normal state model conductivity is given by two Drude components, one of which much broader and intense than the other. In the superconducting state, we find that a gap $Δ$=37$\pm$3 cm$^{-1}$ opens up in the narrow Drude band only, while the broad Drude band results to be ungapped, at least in the explored spectral range. Our results show that only a two-band model can coherently describe both normal and superconducting state data.

preprint2013arXiv

Raman spectroscopy study of the interface structure in (CaCuO2)n/(SrTiO3)m superlattices

Raman spectra of CaCuO2/SrTiO3 superlattices show clear spectroscopic marker of two structures formed in CaCuO2 at the interface with SrTiO3. For non-superconducting superlattices, grown in low oxidizing atmosphere, the 425 cm-1 frequency of oxygen vibration in CuO2 planes is the same as for CCO films with infinite layer structure (planar Cu-O coordination). For superconducting superlattices grown in highly oxidizing atmosphere, a 60 cm-1 frequency shift to lower energy occurs. This is ascribed to a change from planar to pyramidal Cu-O coordination because of oxygen incorporation at the interface. Raman spectroscopy proves to be a powerful tool for interface structure investigation.