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Researcher profile

S. C. Zhang

S. C. Zhang contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conquant-ph

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Published work

3 published item(s)

preprint2011arXiv

Pressure induced Superconductivity in Topological Compound Bi2Te3

Bi2Te3 compound has been theoretically predicted (1) to be a topological insulator, and its topologically non-trivial surface state with a single Dirac cone has been observed in photoemission experiments (2). Here we report that superconductivity (Tc^~3K) can be induced in Bi2Te3 as-grown single crystal (with hole-carriers) via pressure. The first-principles calculations show that the electronic structure under pressure remains to be topologically nontrivial, and the Dirac-type surface states can be well distinguished from bulk states at corresponding Fermi level. The proximity effect between superconducting bulk states and Dirac-type surface state could generate Majorana fermions on the surface. We also discuss the possibility that the bulk state could be a topological superconductor.

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preprint2010arXiv

Quantized Anomalous Hall Effect in Magnetic Topological Insulators

The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin Hall effect have been discovered in recent years. However, the quantized anomalous Hall (QAH) effect has not yet been realized experimentally. In a QAH insulator, spontaneous magnetic moments and spin-orbit coupling combine to give rise to a topologically non-trivial electronic structure, leading to the quantized Hall effect without any external magnetic field. In this work, based on state-of-art first principles calculations, we predict that the tetradymite semiconductors Bi$_2$Te$_3$, Bi$_2$Se$_3$, and Sb$_2$Te$_3$ form magnetically ordered insulators when doped with transition metal elements (Cr or Fe), in sharp contrast to conventional dilute magnetic semiconductor where free carriers are necessary to mediate the magnetic coupling. Magnetic order in two-dimensional thin films gives rise to a topological electronic structure characterized by a finite Chern number, with quantized Hall conductance $e^{2}/h$. Experimental realization of the long sought-after QAH insulator state could enable robust dissipationless charge transport at room temperature.

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preprint2010arXiv

Single valley Dirac fermions in zero-gap HgTe quantum wells

Dirac fermions have been studied intensively in condensed matter physics in recent years. Many theoretical predictions critically depend on the number of valleys where the Dirac fermions are realized. In this work, we report the discovery of a two dimensional system with a single valley Dirac cone. We study the transport properties of HgTe quantum wells grown at the critical thickness separating between the topologically trivial and the quantum spin Hall phases. At high magnetic fields, the quantized Hall plateaus demonstrate the presence of a single valley Dirac point in this system. In addition, we clearly observe the linear dispersion of the zero mode spin levels. Also the conductivity at the Dirac point and its temperature dependence can be understood from single valley Dirac fermion physics.

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