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Source author record

E. M. Hankiewicz

E. M. Hankiewicz appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conhep-thcond-mat.str-elhep-exhep-phquant-ph

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Published work

29 published item(s)

preprint2020arXiv

Momentum-Dependent Mass and AC Hall Conductivity of Quantum Anomalous Hall Insulators and Their Relation to the Parity Anomaly

The Dirac mass of a two-dimensional QAH insulator is directly related to the parity anomaly of planar quantum electrodynamics, as shown initially in Phys. Rev. Lett. 52, 18 (1984). In this work, we connect the additional momentum-dependent Newtonian mass term of a QAH insulator to the parity anomaly. By calculating the effective action, we reveal that the Newtonian mass term acts like a parity-breaking element of a high-energy regularization scheme. As such, it is directly related to the parity anomaly. In addition, the calculation of the effective action allows us to determine the finite frequency correction to the DC Hall conductivity of a QAH insulator. We derive that the leading order AC correction contains a term proportional to the torsional Hall viscosity. This paves the way to measure this non-dissipative transport coefficient via electrical or magneto-optical experiments. Moreover, we prove that the Newtonian mass significantly changes the resonance structure of the AC Hall conductivity in comparison to pure Dirac systems like graphene.

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preprint2020arXiv

Survival of the quantum anomalous Hall effect in orbital magnetic fields as a consequence of the parity anomaly

Recent experimental progress in condensed matter physics enables the observation of signatures of the parity anomaly in two-dimensional Dirac-like materials. Using effective field theories and analyzing band structures in external out-of-plane magnetic fields (orbital fields), we show that topological properties of quantum anomalous Hall (QAH) insulators are related to the parity anomaly. We demonstrate that the QAH phase survives in orbital fields, violates the Onsager relation, and can be therefore distinguished from a quantum Hall (QH) phase. As a fingerprint of the QAH phase in increasing orbital fields, we predict a transition from a quantized Hall plateau with $σ_\mathrm{xy}= -\mathrm{e}^2/\mathrm{h}$ to a not perfectly quantized plateau, caused by scattering processes between counterpropagating QH and QAH edge states. This transition can be especially important in paramagnetic QAH insulators, such as (Hg,Mn)Te/CdTe quantum wells, in which exchange interaction and orbital fields compete.

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preprint2020arXiv

Topological Quantum Computing Using Nanowire Devices

The boundary of topological superconductors might lead to the appearance of Majorana edge modes, whose non-trivial exchange statistics can be used for topological quantum computing. In branched nanowire networks one can exchange Majorana states by time-dependently tuning topologically non-trivial parameter regions. In this work, we simulate the exchange of four Majorana modes in T-shaped junctions made out of p-wave superconducting Rashba wires. We derive concrete experimental predictions for (quasi-)adiabatic braiding times and determine geometric conditions for successful Majorana exchange processes. Contrary to the widespread opinion, we show for the first time that in the adiabatic limit the gating time needs to be smaller than the inverse of the squared superconducting order parameter and scales linearly with the gating potential. Further, we show how to circumvent the formation of additional Majorana modes in branched nanowire systems, arising at wire intersection points of narrow junctions. Finally, we propose a multi qubit setup, which allows for universal and in particular topologically protected quantum computing.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Anomalous Spin Response and Virtual-Carrier-Mediated Magnetism in a Topological Insulator

We present a comprehensive theoretical study of the static spin response in HgTe quantum wells, revealing distinctive behavior for the topologically nontrivial inverted structure. Most strikingly, the q=0 (long-wave-length) spin susceptibility of the undoped topological-insulator system is constant and equal to the value found for the gapless Dirac-like structure, whereas the same quantity shows the typical decrease with increasing band gap in the normal-insulator regime. We discuss ramifications for the ordering of localized magnetic moments present in the quantum well, both in the insulating and electron-doped situations. The spin response of edge states is also considered, and we extract effective Lande g-factors for the bulk and edge electrons. The variety of counter-intuitive spin-response properties revealed in our study arises from the system's versatility in accessing situations where the charge-carrier dynamics can be governed by ordinary Schrodinger-type physics, mimics the behavior of chiral Dirac fermions, or reflects the material's symmetry-protected topological order.

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preprint2015arXiv

Conductivity Corrections for Topological Insulators with Spin-Orbit Impurities: A New Hikami-Larkin-Nagaoka Formula

The Hikami-Larkin-Nagaoka (HLN) formula [Prog. Theor. Phys. 63, 707 (1980)] describes the quantum corrections to the magnetoconductivity of a quasi-2D electron gas (quasi-2DEG) with parabolic dispersion. It predicts a crossover from weak localization to antilocalization as a function of the strength of scattering off spin-orbit impurities. Here, we derive the conductivity correction for massless Dirac fermions in 3D topological insulators (TIs) in the presence of spin-orbit impurities. We show that this correction is always positive and therefore we predict weak antilocalization for every value of the spin-orbit disorder. Furthermore, the correction to the diffusion constant is surprisingly linear in the strength of the impurity spin-orbit. Our results call for a reinterpretation of experimental fits for the magnetoconductivity of 3D TIs which have so far used the standard HLN formula.

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preprint2015arXiv

Magneto-optics of massive Dirac fermions in bulk Bi2Se3

We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parameters: the fundamental bandgap and the band velocity. In a magnetic field, this model implies a unique property - spin splitting equal to twice the cyclotron energy: Es = 2Ec. This explains the extensive magneto-transport studies concluding a fortuitous degeneracy of the spin and orbital split Landau levels in this material. The Es = 2Ec match differentiates the massive Dirac electrons in bulk Bi2Se3 from those in quantum electrodynamics, for which Es = Ec always holds.

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preprint2015arXiv

Quantum interference of edge supercurrents in a two-dimensional topological insulator

Josephson weak links made of two-dimensional topological insulators (TIs) exhibit magnetic oscillations of the supercurrent that are reminiscent of those in superconducting quantum interference devices (SQUIDs). We propose a microscopic theory of this effect that goes beyond the approaches based on the standard SQUID theory. For long junctions we find a temperature-driven crossover from Phi_0-periodic SQUID-like oscillations to a 2 Phi_0-quasiperiodic interference pattern with different peaks at even and odd values of the magnetic flux quantum Phi_0=ch/2e. This behavior is absent in short junctions where the main interference signal occurs at zero magnetic field. Both types of interference patterns reveal gapless (protected) Andreev bound states. We show, however, that the usual sawtooth current-flux relationship is profoundly modified by a Doppler-like effect of the shielding current which has been overlooked previously. Our findings may explain recently observed even-odd interference patterns in InAs/GaSb-based TI Josephson junctions and uncover unexplored operation regimes of nano-SQUIDs.

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preprint2015arXiv

Superconducting quantum spin-Hall systems with giant orbital g-factors

Topological aspects of superconductivity in quantum spin-Hall systems (QSHSs) such as thin layers of three-dimensional topological insulators (3D Tis) or two-dimensional Tis are in the focus of current research. We examine hybrid QSHS/superconductor structures in an external magnetic field and predict a gapless superconducting state with protected edge modes. It originates entirely from the orbital magnetic-field effect caused by the locking of the electron spin to the momentum of the superconducting condensate flow. We show that such spin-momentum locking can generate a giant orbital g-factor of order of several hundreds, allowing one to achieve significant spin polarization in the QSHS in the fields well below the critical field of the superconducting material. We propose a three-terminal setup in which the spin-polarized edge superconductivity can be probed by Andreev reflection, leading to unusual transport characteristics: a non-monotonic excess current and a zero-bias conductance splitting in the absence of the Zeeman interaction.

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preprint2014arXiv

Voltage Induced Dynamical Quantum Phase Transitions in Exciton Condensates

We explore non-analytic quantum phase dynamics of dipolar exciton condensates formed in a system of 1D quantum layers subjected to voltage quenches. We map the exciton condensate physics on to the pseudospin ferromagnet model showing an additional oscillatory metastable and paramagnetic phase beyond the well-known ferromagnetic phase by utilizing a time-dependent, non-perturbative theoretical model. We explain the coherent phase of the exciton condensate in quantum Hall bilayers, observed for currents equal to and slightly larger than the critical current, as a stable time-dependent phase characterized by persistent charged meron flow in each of the individual layers with a characteristic AC Josephson frequency. As the magnitude of the voltage quench is further increased, we find that the time-dependent current oscillations associated with the charged meron flow decay, resulting in a transient pseudospin paramagnet phase characterized by partially coherent charge transfer between layers, before the state relaxes to incoherent charge transfer between the layers.

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preprint2013arXiv

Anomalous spin precession and spin Hall effect in semiconductor quantum wells

Spin-orbit (SO) interactions give a spin-dependent correction r_so to the position operator, referred to as the anomalous position operator. We study the contributions of r_so to the spin-Hall effect (SHE) in quasi two-dimensional (2D) semiconductor quantum wells with strong band structure SO interactions that cause spin precession. The skew scattering and side-jump scattering terms in the SHE vanish, but we identify two additional terms in the SHE, due to r_so, which have not been considered in the literature so far. One term reflects the modification of the spin precession due to the action of the external electric field (the field drives the current in the quantum well), which produces, via r_so, an effective magnetic field perpendicular to the plane of the quantum well. The other term reflects a similar modification of the spin precession due to the action of the electric field created by random impurities, and appears in a careful formulation of the Born approximation. We refer to these two effects collectively as anomalous spin precession and we note that they contribute to the SHE to the first order in the SO coupling constant even though they formally appear to be of second order. In electron systems with weak momentum scattering, the contribution of the anomalous spin precession due to the external electric field equals 1/2 the usual side-jump SHE, while the additional impurity-dependent contribution depends on the form of the band structure SO coupling. For band structure SO linear in wave vector the two additional contributions cancel. For band structure SO cubic in wave vector only the contribution due to external electric field is present, and can be detected through its density dependence. In 2D hole systems both anomalous spin precession contributions vanish identically.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Helical Andreev bound states and superconducting Klein tunneling in topological insulator Josephson junctions

Currently, much effort is being put into detecting unconventional p-wave superconductivity in Josephson junctions based on topological insulators (TIs). For that purpose we propose to use superconducting Klein tunneling, i.e. the reflectionless passage of Cooper pairs through a potential barrier in a gated ballistic junction. This phenomenon occurs due to the fact that the supercurrent is carried by helical Andreev bound states (ABSs) characterized by spin-momentum locking similar to the normal-state carriers. We derive the spectrum of the helical ABSs and the corresponding Josephson current for a junction made on the surface of a three-dimensional TI. The superconducting Klein tunneling is predicted to yield a non-sinusoidal current-phase relation and an anomalous critical current $I_c$ that does not vanish with increasing barrier strength. We also analyze the dependence of the I_cR_n product (where R_n is the normal-state junction resistance) on the microscopic parameters of the superconductor/TI interface, which leads to lower I_cR_n values than expected from previous models of the proximity-effect Josephson junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

One-dimensional weak antilocalization and band Berry phases in HgTe wires

We study the weak antilocalization (WAL) effect in the magnetoresistance of narrow HgTe wires fabricated in quantum wells (QWs) with normal and inverted band ordering. Measurements at different gate voltages indicate that the WAL is only weakly affected by Rashba spin-orbit splitting and persists when the Rashba splitting is about zero. The WAL signal in wires with normal band ordering is an order of magnitude smaller than for inverted ones. These observations are attributed to a Dirac-like topology of the energy bands in HgTe QWs. From the magnetic-field and temperature dependencies we extract the dephasing lengths and band Berry phases. The weaker WAL for samples with a normal band structure can be explained by a non-universal Berry phase which always exceeds π, the characteristic value for gapless Dirac fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Proposal for an all-electrical measurement of crossed Andreev reflection in topological insulators

Using a generalized wave matching method we solve the full scattering problem for quantum spin Hall insulator (QSHI) - superconductor (SC) - QSHI junctions. We find that for systems narrow enough so that the bulk states in the SC part couple both edges, the crossed Andreev reflection (CAR) is significant and the electron cotunneling (T) and CAR become spatially separated. We study the effectiveness of this separation as a function of the system geometry and the level of doping in the SC. Moreover, we show that the spatial separation of both effects allows for an all-electrical measurement of CAR and T separately in a 5-terminal setup or by using the spin selection of the quantum spin Hall effect in an H-bar structure.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin-dependent thermoelectric transport in HgTe/CdTe quantum wells

We analyze thermally induced spin and charge transport in HgTe/CdTe quantum wells on the basis of the numerical non-equilibrium Green's function technique in the linear response regime. In the topologically non-trivial regime, we find a clear signature of the gap of the edge states due to their finite overlap from opposite sample boundaries -- both in the charge Seebeck and spin Nernst signal. We are able to fully understand the physical origin of the thermoelectric transport signatures of edge and bulk states based on simple analytical models. Interestingly, we derive that the spin Nernst signal is related to the spin Hall conductance by a Mott-like relation which is exact to all orders in the temperature difference between the warm and the cold reservoir.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin-helical transport in normal and superconducting topological insulators

In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically protected and characterized by spin helicity whereby the direction of the electron spin is locked to the momentum direction. In this paper we review selected topics regarding recent theoretical and experimental work on electron transport and related phenomena in two-dimensional (2D) and three-dimensional (3D) TIs. The review provides a focused introductory discussion of the quantum spin Hall effect in HgTe quantum wells as well as transport properties of 3DTIs such as surface weak antilocalization, the half-integer quantum Hall effect, s + p-wave induced superconductivity, superconducting Klein tunneling, topological Andreev bound states and related Majorana midgap states. These properties of TIs are of practical interest, guiding the search for the routes towards topological spin electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Anomalous galvanomagnetism, cyclotron resonance and microwave spectroscopy of topological insulators

The surface quantum Hall state, magneto-electric phenomena and their connection to axion electrodynamics have been studied intensively for topological insulators. One of the obstacles for observing such effects comes from nonzero conductivity of the bulk. To overcome this obstacle we propose to use an external magnetic field to suppress the conductivity of the bulk carriers. The magnetic field dependence of galvanomagnetic and electromagnetic responses of the whole system shows anomalies due to broken time-reversal symmetry of the surface quantum Hall state, which can be used for its detection. In particular, we find linear bulk dc magnetoresistivity and a quadratic field dependence of the Hall angle, shifted rf cyclotron resonance, nonanalytic microwave transmission coefficient and saturation of the Faraday rotation angle with increasing magnetic field or wave frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Backscattering of Dirac fermions in HgTe quantum wells with a finite gap

The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high quality HgTe quantum wells exhibit a distinct mobility maximum. We show that this mobility anomaly is due to backscattering of Dirac fermions from random fluctuations of the band gap (Dirac mass). Our findings open new avenues for the study of Dirac fermion transport with finite and random mass, which so far has been hard to access.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Interplay of bulk and edge states in transport of two-dimensional topological insulators

We study transport in two-terminal metal/quantum spin-Hall insulator (QSHI)/metal junctions. We show that the conductance signals originating from the bulk and the edge contributions are not additive. While for a long junction the transport is determined by the edge states contribution, for a short junction, the conductance signal is built from both bulk and edge states in the ratio which depends on the width of the sample. Further, in the topological insulator regime the conductance for short junctions shows a non-monotonic behavior as a function of the sample length. Surprisingly this non-monotonic behavior of conductance can be traced to the formation of an effectively propagating solution which is robust against scalar disorder. Our predictions should be experimentally verifiable in HgTe QWs and Bi$_2$Se$_3$ thin films.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

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preprint2011arXiv

Quantum Hall Superfluids in Topological Insulator Thin Films

Three-dimensional topological insulators have protected Dirac-cone surface states. In this paper we propose magnetic field induced topological insulator thin film ordered states in which coherence is established spontaneously between top and bottom surfaces. We find that the large dielectric constants of these materials increases the layer separation range over which coherence survives and decreases the superfluid sound velocity, but has little influence on superfluid density or charge gap. The coherent state at total Landau-level filling factor $ν_T=0$ is predicted to be free of edge modes, qualitatively altering its transport phenomenology.

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preprint2011arXiv

Transition between ordinary and topological insulator regimes in two-dimensional resonant magnetotransport

In the two-dimensional case the transition between ordinary and topological insulator states can be described by a massive Dirac model with the mass term changing its sign at the transition point. We theoretically investigate how such a transition manifests itself in resonant transport via localized helical edge states. The resonance occurs in the middle of the band gap due to a zero edge-state mode which is protected by the time-reversal symmetry, also when coupled to the conducting leads. We obtain the explicit dependence of the resonant conductance on the mass parameter and an external magnetic field. The proposal may be of practical use, allowing one to determine the orbital g-factor of helical edge states in two-dimensional topological insulators.

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preprint2011arXiv

Two-dimensional topological insulators in quantizing magnetic fields

Two-dimensional topological insulators are characterized by gapped bulk states and gapless helical edge states, i.e. time-reversal symmetric edge states accommodating a pair of counter-propagating electrons. An external magnetic field breaks the time-reversal symmetry. What happens to the edge states in this case? In this paper we analyze the edge-state spectrum and longitudinal conductance in a two-dimensional topological insulator subject to a quantizing magnetic field. We show that the helical edge states exist also in this case. The strong magnetic field modifies the group velocities of the counter-propagating channels which are no longer identical. The helical edge states with different group velocities are particularly prone to get coupled via backscattering, which leads to the suppression of the longitudinal edge magnetoconductance.

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preprint2011arXiv

Weak antilocalization in HgTe quantum wells and topological surface states: Massive versus massless Dirac fermions

HgTe quantum wells and surfaces of three-dimensional topological insulators support Dirac fermions with a single-valley band dispersion. In the presence of disorder they experience weak antilocalization, which has been observed in recent transport experiments. In this work we conduct a comparative theoretical study of the weak antilocalization in HgTe quantum wells and topological surface states. The difference between these two single-valley systems comes from a finite band gap (effective Dirac mass) in HgTe quantum wells in contrast to gapless (massless) surface states in topological insulators. The finite effective Dirac mass implies a broken internal symmetry, leading to suppression of the weak antilocalization in HgTe quantum wells at times larger than certain t_M, inversely proportional to the Dirac mass. This corresponds to the opening of a relaxation gap 1/t_M in the Cooperon diffusion mode which we obtain from the Bethe-Salpeter equation including relevant spin degrees of freedom. We demonstrate that the relaxation gap exhibits an interesting nonmonotonic dependence on both carrier density and band gap, vanishing at a certain combination of these parameters. The weak-antilocalization conductivity reflects this nonmonotonic behavior which is unique to HgTe QWs and absent for topological surface states. On the other hand, the topological surface states exhibit specific weak-antilocalization magnetoconductivity in a parallel magnetic field due to their exponential decay in the bulk.

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preprint2010arXiv

Ballistic quantum spin Hall state and enhanced edge backscattering in strong magnetic fields

The quantum spin Hall (QSH) state, observed in a zero magnetic field in HgTe quantum wells, respects the time-reversal symmetry and is distinct from quantum Hall (QH) states. We show that the QSH state persists in strong quantizing fields and is identified by counter-propagating (helical) edge channels with nonlinear dispersion inside the band gap. If the Fermi level is shifted into the Landau-quantized conduction or valence band, we find a transition between the QSH and QH regimes. Near the transition the longitudinal conductance of the helical channels is strongly suppressed due to the combined effect of the spectrum nonlinearity and enhanced backscattering. It shows a power-law decay 1/B^2N with magnetic field B, determined by the number of backscatterers on the edge, N. This suggests a rather simple and practical way to probe the quality of recently realized quasiballistic QSH devices using magnetoresistance measurements.

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preprint2010arXiv

Fingerprint of Different Spin-Orbit Terms for Spin Transport in HgTe Quantum Wells

Using $\vec{k}$$\cdot$$\vec{p}$ theory, we derive an effective four band model describing the physics of the typical two-dimensional topological insulator (HgTe/CdTe quantum well) in the presence of out-of-plane in z-direction inversion breaking and in-plane confining potentials. We find that up to third order in perturbation theory, only the inversion breaking potential generates new elements to the four band Hamiltonian that are off-diagonal in spin space. When this new effective Hamiltonian is folded into an effective two band model for the conduction (electron) or valence (heavy hole) bands, two competing terms appear: (1) a Rashba spin-orbit interaction originating from inversion breaking potential in z-direction and (2) an in-plane Pauli term as a consequence of the in-plane confining potential. Spin transport in the conduction band is further analysed within the Landauer-Büttiker formalism. We find that for asymmetrically doped HgTe quantum wells, the behaviour of the spin-Hall conductance is dominated by the Rashba term.

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preprint2010arXiv

Single valley Dirac fermions in zero-gap HgTe quantum wells

Dirac fermions have been studied intensively in condensed matter physics in recent years. Many theoretical predictions critically depend on the number of valleys where the Dirac fermions are realized. In this work, we report the discovery of a two dimensional system with a single valley Dirac cone. We study the transport properties of HgTe quantum wells grown at the critical thickness separating between the topologically trivial and the quantum spin Hall phases. At high magnetic fields, the quantized Hall plateaus demonstrate the presence of a single valley Dirac point in this system. In addition, we clearly observe the linear dispersion of the zero mode spin levels. Also the conductivity at the Dirac point and its temperature dependence can be understood from single valley Dirac fermion physics.

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preprint2009arXiv

Side-jumps in the spin-Hall effect: construction of the Boltzmann collision integral

We present a systematic derivation of the side-jump contribution to the spin-Hall current in systems without band structure spin-orbit interactions, focusing on the construction of the collision integral for the Boltzmann equation. Starting from the quantum Liouville equation for the density operator we derive an equation describing the dynamics of the density matrix in the first Born approximation and to first order in the driving electric field. Elastic scattering requires conservation of the total energy, including the spin-orbit interaction energy with the electric field: this results in a first correction to the customary collision integral found in the Born approximation. A second correction is due to the change in the carrier position during collisions. It stems from the part of the density matrix off-diagonal in wave vector. The two corrections to the collision integral add up and are responsible for the total side-jump contribution to the spin-Hall current. The spin-orbit-induced correction to the velocity operator also contains terms diagonal and off-diagonal in momentum space, which together involve the total force acting on the system. This force is explicitly shown to vanish (on the average) in the steady state: thus the total contribution to the spin-Hall current due to the additional terms in the velocity operator is zero.

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preprint2009arXiv

Signatures of topology in ballistic bulk transport of HgTe quantum wells

We calculate bulk transport properties of two-dimensional topological insulators based on HgTe quantum wells in the ballistic regime. Interestingly, we find that the conductance and the shot noise are distinctively different for the so-called normal regime (the topologically trivial case) and the so-called inverted regime (the topologically non-trivial case). Thus, it is possible to verify the topological order of a two-dimensional topological insulator not only via observable edge properties but also via observable bulk properties. This is important because we show that under certain conditions the bulk contribution can dominate the edge contribution which makes it essential to fully understand the former for the interpretation of future experiments in clean samples.

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preprint2009arXiv

Spin-Hall effect and spin-Coulomb drag in doped semiconductors

In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two phenomena is analyzed. In particular, we discuss the influence of scattering between electrons with opposite spins on the spin current and the spin accumulation produced by the spin-Hall effect. Future challenges and open questions are briefly discussed.

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