Researcher profile

S. C. P. Rodrigues

S. C. P. Rodrigues contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2012arXiv

Structural, electronic, and optical properties of ZrO2 from ab initio calculations

Structural, electronic, and optical properties for the cubic, tetragonal, and monoclinic crystalline phases of ZrO2, as derived from it ab initio full-relativistic calculations, are presented. The electronic structure calculations were carried out by means of the all-electron full potential linear augmented plane wave method, within the framework of the density functional theory and the local density approximation. The calculated carrier effective masses are shown to be highly anisotropic. The results obtained for the real and imaginary parts of the dielectric function, the reflectivity, and the refraction index, show good agreement with the available experimental results. In order to obtain the static dielectric constant of ZrO2, we added to the electronic part, the optical phonons contribution, which leads to values of e1(0)~29.5, 26.2, 21.9, respectively along the xx, yy, and zz directions, for the monoclinic phase, in excellent accordance with experiment. Relativistic effects, including the spin-orbit interaction, are demonstrated to be important for a better evaluation of the effective mass values, and in the detailed structure of the frequency dependent complex dielectric function.

preprint2006arXiv

Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. We observed that the spin-polarized transport properties changes strongly among the three materials.