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A. T. da Cunha Lima

A. T. da Cunha Lima appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2008arXiv

Impurity bands and the character of the electronic states in ferromagnetic GaMnAs layers

The interplay between disorder and spin polarization in a GaMnAs thin layer results into spin-polarized impurity hole bands. A figure of merit is defined to label the hole state as being extended or localized. The calculation leads to a phase diagram determining the metallic or non-metallic character of the sample. It is shown that samples with the highest figures of merit have a ratio between the extended hole density and the Mn concentration near 0.2, in agreement with the ratio of 0.1-0.25 known to occur among samples produced with the highest Curie temperatures. Both the non-metal-to-metal and the metal-to-non-metal transitions experimentally observed in the ferromagnetic regime are obtained, as the Mn concentration increases. An explanation is given for the occurrence of a maximal Curie temperature in ferromagnetic GaMnAs samples.

preprint2006arXiv

Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. We observed that the spin-polarized transport properties changes strongly among the three materials.