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S. Aria Hosseini

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Published work

2 published item(s)

preprint2022arXiv

Mode- and Space- Resolved Thermal Transport of Alloy Nanostructures

Nanostructured semiconducting alloys obtain ultra-low thermal conductivity as a result of the scattering of phonons with a wide range of mean-free-paths (MFPs). In these materials, long-MFP phonons are scattered at the nanoscale boundaries whereas short-MFP high-frequency phonons are impeded by disordered point defects introduced by alloying. While this trend has been validated by simplified analytical and numerical methods, an ab-initio space-resolved approach remains elusive. To fill this gap, we calculate the thermal conductivity reduction in porous alloys by solving the mode-resolved Boltzmann transport equation for phonons using the finite-volume approach. We analyze different alloys, length-scales, concentrations, and temperatures, obtaining a very large reduction in the thermal conductivity over the entire configuration space. For example, a ~97% reduction is found for Al$_{0.8}$In$_{0.2}$As with 25% porosity. Furthermore, we employ these simulations to validate our recently introduced "Ballistic Correction Model" (BCM), an approach that estimates the effective thermal conductivity using the characteristic MFP of the bulk alloy and the length-scale of the material. The BCM is then used to provide guiding principles in designing alloy-based nanostructures. Notably, it elucidates how porous alloys such as Si$_{x}$Ge$_{1-x}$ obtain larger thermal conductivity reduction compared to porous Si or Ge, while also explaining why we should not expect similar behavior in alloys such as Al$_{x}$In$_{1-x}$As. By taking into account the synergy from scattering at different scales, we provide a route for the design of materials with ultra-low thermal conductivity.

preprint2022arXiv

Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

The ability to minimize the thermal conductivity of dielectrics with minimal structural intervention that could affect electrical properties is an important capability for engineering thermoelectric efficiency in low-cost materials such as Si. We recently reported the discovery of special arrangements for nanoscale pores in Si that produce a particularly large reduction in thermal conductivity accompanied by strongly anticorrelated heat current fluctuations, a phenomenon that is missed by the diffuse adiabatic boundary conditions conventionally used in numerical Boltzmann transport models. This manuscript presents the results of molecular dynamics simulations and a Monte Carlo ray tracing model that teases apart this phenomenon to reveal that special pore layouts elastically backscatter long-wavelength heat-carrying phonons. This means that heat carriage by a phonon before scattering is undone by the scattered phonon, resulting in an effective mean-free-path that is significantly shorter than the geometric line-of-sight to the pores. This effect is particularly noticeable for the long-wavelength, long mean-free-path phonons whose transport is impeded drastically more than is expected purely from the usual considerations of scattering defined by the distance between defects. This super-suppression of the mean-free-path below the characteristic length scale of the nanostructuring offers a route for minimizing thermal conductivity with minimal structural impact, while the stronger impact on long wavelengths offers possibilities for the design of band-pass phonon filtering. Moreover, the ray tracing model developed in this paper shows that different forms of correlated scattering imprint a unique signature in the heat current autocorrelation function that could be used as a diagnostic in other nanostructured systems.