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Researcher profile

G. Jeffrey Snyder

G. Jeffrey Snyder contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciMachine Learningphysics.app-phphysics.comp-ph

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Published work

6 published item(s)

preprint2026arXiv

Probing Non-Equilibrium Grain Boundary Dynamics with XPCS and Domain-Adaptive Machine Learning

Grain-boundary (GB) dynamics control the stability, mechanical, and functional response of nanocrystalline materials, but direct experimental access to their slow non-equilibrium motion has been limited. Here we establish X-ray photon correlation spectroscopy (XPCS), combined with domain-adaptive machine learning, as a quantitative probe of GB dynamics. Temperature- and grain-size-dependent two-time XPCS measurements in nanocrystalline silicon reveal pronounced departures from time-translation invariance, showing that GB relaxation can remain far from equilibrium over experimental timescales. However, direct extraction of quantitative physical information from these high-dimensional, noisy fluctuation maps faces a significant challenge. To overcome this barrier, we develop a semi-supervised learning framework that transfers physical parameter labels from continuum simulations to unlabeled experimental XPCS maps through domain-adaptive representation alignment. This AI-augmented approach enables the extraction of key kinetic parameters, including bulk diffusivity, GB stiffness, and effective GB concentration, directly from experimental XPCS measurements. Our results show how machine learning can transform indirect fluctuation signals into quantitative materials dynamics, providing a general route to study non-equilibrium defect motion in solids.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Mapping Thermoelectric Transport in a Multicomponent Alloy Space

Interest in high entropy alloy thermoelectric materials is predicated on achieving ultralow lattice thermal conductivity $κ\sub{L}$ through large compositional disorder. However, here we show that for a given mechanism, such as mass contrast phonon scattering, $κ\sub{L}$ will be minimized along the binary alloy with the highest mass contrast, such that adding an intermediate-mass atom to increase atomic disorder can increase thermal conductivity. Only when each component adds an independent scattering mechanism (such as adding strain fluctuation to an existing mass fluctuation) is there a benefit. In addition, both charge carriers and heat-carrying phonons are known to experience scattering due to alloying effects, leading to a trade-off in thermoelectric performance. We apply analytic transport models, based on perturbation and effective medium theories, to predict how alloy scattering will affect the thermal and electronic transport across the full compositional range of several pseudo-ternary and pseudo-quaternary alloy systems. To do so, we demonstrate a multicomponent extension to both thermal and electronic binary alloy scattering models based on the virtual crystal approximation. Finally, we show that common functional forms used in computational thermodynamics can be applied to this problem to further generalize the scattering behavior that is modeled.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Mode- and Space- Resolved Thermal Transport of Alloy Nanostructures

Nanostructured semiconducting alloys obtain ultra-low thermal conductivity as a result of the scattering of phonons with a wide range of mean-free-paths (MFPs). In these materials, long-MFP phonons are scattered at the nanoscale boundaries whereas short-MFP high-frequency phonons are impeded by disordered point defects introduced by alloying. While this trend has been validated by simplified analytical and numerical methods, an ab-initio space-resolved approach remains elusive. To fill this gap, we calculate the thermal conductivity reduction in porous alloys by solving the mode-resolved Boltzmann transport equation for phonons using the finite-volume approach. We analyze different alloys, length-scales, concentrations, and temperatures, obtaining a very large reduction in the thermal conductivity over the entire configuration space. For example, a ~97% reduction is found for Al$_{0.8}$In$_{0.2}$As with 25% porosity. Furthermore, we employ these simulations to validate our recently introduced "Ballistic Correction Model" (BCM), an approach that estimates the effective thermal conductivity using the characteristic MFP of the bulk alloy and the length-scale of the material. The BCM is then used to provide guiding principles in designing alloy-based nanostructures. Notably, it elucidates how porous alloys such as Si$_{x}$Ge$_{1-x}$ obtain larger thermal conductivity reduction compared to porous Si or Ge, while also explaining why we should not expect similar behavior in alloys such as Al$_{x}$In$_{1-x}$As. By taking into account the synergy from scattering at different scales, we provide a route for the design of materials with ultra-low thermal conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Phonon Scattering in the Complex Strain Field of a Dislocation

Strain engineering is critical to the performance enhancement of electronic and thermoelectric devices because of its influence on the material thermal conductivity. However, current experiments cannot probe the detailed physics of the phonon-strain interaction due to the complex, inhomogeneous, and long-distance features of the strain field in real materials. Dislocations provide us with an excellent model to investigate these inhomogeneous strain fields. In this study, non-equilibrium molecular dynamics simulations were used to study the lattice thermal conductivity of PbTe under different strain status tuned by dislocation densities. The extended 1D McKelvey-Shockley flux method was used to analyze the frequency dependence of phonon scattering in the inhomogeneously strained regions of dislocations. A spatially resolved phonon dislocation scattering process was shown, where the unequal strain in different regions affected the magnitude and frequency-dependence of the scattering rate. Our study not only advances the knowledge of strain scattering of phonon propagation but offers fundamental guidance on optimizing thermal management by structure design.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Probing the Phonon Mean Free Paths in Dislocation Core by Molecular Dynamics Simulation

Thermal management is extremely important for designing high-performance devices. The lattice thermal conductivity of materials is strongly dependent on the structural defects at different length scales, particularly point defects like vacancies, line defects like dislocations, and planar defects such as grain boundaries. Traditionally, the McKelvey-Shockley phonon Boltzmann's transport equation (BTE) method combined with molecular dynamics simulations has been widely used to evaluate the phonon mean free paths (MFPs) in defective systems. However, this method can only provide the aggregate MFPs of the whole sample. It is, therefore, challenging to extract the MFPs in the different regions with different thermal properties. In this study, the 1D McKelvey-Shockley phonon BTE method was extended to model inhomogeneous materials, where the effect of defects on the phonon MFPs is explicitly obtained. Then, the method was used to study the phonon interactions with the core structure of an edge dislocation. The phonon MFPs in the dislocation core were obtained and consistent with the analytical model such that high frequency phonons are likely to be scattered in this area. This method not only advances the knowledge of phonon-dislocation scattering but also shows the potential to investigate phonon transport behaviors in more complicated materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Analytical Models of Phonon-Point Defect Scattering

Point defects exist widely in engineering materials and are known to scatter vibrational modes to reduce thermal conductivity. The Klemens description of point defect scattering is the most prolific analytical model for this effect. This work reviews the essential physics of the model and compares its predictions to first principles results for isotope and alloy scattering, demonstrating the model as a useful materials design metric. A treatment of the scattering parameter ($Γ$) for a multiatomic lattice is recommended and compared to other treatments presented in literature, which have been at times misused to yield incomplete conclusions about the system's scattering mechanisms. Additionally, we demonstrate a reduced sensitivity of the model to the full phonon dispersion and discuss its origin. Finally, a simplified treatment of scattering in alloy systems with vacancies and interstitial defects is demonstrated to suitably describe the potent scattering strength of these off-stoichiometric defects.

0 citations0 reviewsNo code linkedOpen access