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Ryota Takahashi

Ryota Takahashi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2022arXiv

A Personalized Dialogue Generator with Implicit User Persona Detection

Current works in the generation of personalized dialogue primarily contribute to the agent presenting a consistent personality and driving a more informative response. However, we found that the generated responses from most previous models tend to be self-centered, with little care for the user in the dialogue. Moreover, we consider that human-like conversation is essentially built based on inferring information about the persona of the other party. Motivated by this, we propose a novel personalized dialogue generator by detecting an implicit user persona. Because it is hard to collect a large number of detailed personas for each user, we attempted to model the user's potential persona and its representation from dialogue history, with no external knowledge. The perception and fader variables were conceived using conditional variational inference. The two latent variables simulate the process of people being aware of each other's persona and producing a corresponding expression in conversation. Finally, posterior-discriminated regularization was presented to enhance the training procedure. Empirical studies demonstrate that, compared to state-of-the-art methods, our approach is more concerned with the user's persona and achieves a considerable boost across the evaluations.

preprint2010arXiv

Epitaxial Graphene on Silicon toward Graphene-Silicon Fusion Electronics

Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene on SiC substrates by thermal decomposition of surface layers has proved itself quite satisfactory both in quality and in process reliability. Even modulation of structural and hence electronic properties of graphene is possible by tuning the graphene/SiC interface structure. The challenges for this graphene-on-SiC technology, however, are the abdication of the well-established Si technologies and the high production cost of the SiC bulk crystals. Here, we demonstrate that formation of epitaxial graphene on silicon substrate is possible, by graphitizing epitaxial SiC thin films formed on silicon substrates. This graphene-on-silicon (GOS) method enables us to form a large-area film of well-ordered sp2 carbon networks on Si substrates and to fabricate electronic devices based on the structure.