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Rupam Mukherjee

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2 publications

preprint2014arXiv

Enhancement of high dielectric constant in CaCu3_3Ti4_4O1_12_2/RuO2_2 composites in the vicinity of the percolation threshold

We observe the large enhancement in the dielectric response near the percolation threshold in a composite nanoparticle system consisting of metallic RuO2_2 grains embedded into dielectric CaCu3_3Ti4_4O1_12_2 (CCTO) matrix and annealed at 1100OC. To understand the nature of the dielectric response, we compare CCTO fabricated by two different techniques, solid state process (CCTOS_SS_S) and sol-gel process (CCTOS_SG_G) with the intrinsic dielectric constant in both cases found to be on the order of 103^3-104^4 at 10 kHz. For RuO2_2/CCTOS_SS_S and RuO2_2/CCTOS_SG_G composites and composites, an increase of the dielectric constant by factors of 7 and 5 respectively is observed in the vicinity of the percolation threshold of about 0.1, with moderate losses at room temperature. Scanning electron microscopy and Energy Dispersive X-ray spectroscopy indicate that the difference in the size of the effect may arise from the microstructure of the copper oxide enriched grain boundaries in the host CCTO.

preprint2013arXiv

Oxygen vacancy enhanced room temperature ferromagnetism in Al-doped MgO nanoparticles

We have investigated the room temperature ferromagnetic order that develops in Al-substituted magnesium oxide, Mg(Al)O, nanoparticles with Al fractions of up to 5 at.%. All samples, including undoped MgO nanoparticles, exhibit room temperature ferromagnetism, with the saturation magnetization reaching a maximum of 0.023 emu/g at 2 at.% of Al. X-ray photoelectron spectroscopy identifies the presence of oxygen vacancies in both doped and undoped MgO nanoparticles, with the vacancy concentration increasing upon vacuum annealing of Mg(Al)O, resulting in two-fold enhancement of the saturation magnetization for 2 at.% Al-doped MgO. Our results suggest that the oxygen vacancies are largely responsible for room temperature ferromagnetism in MgO.

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