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Run Zhao

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Published work

2 published item(s)

preprint2020arXiv

Chargeable photoconductivity in Van der Waals heterojunctions

Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, show great potential for the development of eco-friendly and high-efficiency nano-devices. Considerable research has been performed and has reported valuable applications of photovoltaic cells, photodetectors, etc. However, simultaneous energy conversion and storage in a single device has not been achieved. Here, we demonstrate a simple strategy to construct a vdW p-n junction between a WSe2 layer and quasi-2D electron gas. After once optical illumination, the device stores the light-generated electrons and holes for up to seven days, and then releases a very large photocurrent of 2.9 mA with bias voltage applied in darkness; this is referred to as chargeable photoconductivity (CPC), which completely differs from any previously observed photoelectric phenomenon. In normal photoconductivity, the recombination of electron-hole pairs takes place at the end of their lifetime, causing a release of heat; in contrast, infinite-lifetime photocarriers can be generated in CPC devices without a thermal loss. The photoelectric conversion and storage are completely self-excited during the charging process. The ratio between currents in full- and empty-energy states below the critical temperature reaches as high as 109, with an external quantum efficiency of 4410000% during optical charging. A theoretical model developed to explain the mechanism of this effect is in good agreement with the experimental data. This work paves a path towards storage-type photoconductors and high-efficiency entropy-decreasing devices.

preprint2013arXiv

Oxygen-Vacancy-Induced Antiferromagnetism to Ferromagnetism Transformation in Multiferroic Thin Films

Oxygen vacancies (VOs) effects on magnetic ordering in Eu0.5Ba0.5TiO3-δ (EBTO3-δ) thin films have been investigated using a combination of experimental measurements and first-principles density-functional calculations. Two kinds of EBTO3-δthin films with different oxygen deficiency have been fabricated. A nuclear resonance backscattering spectrometry technique has been used to quantitatively measure contents of the VOs. Eu0.5Ba0.5TiO3 ceramics have been known to exhibit ferroelectric (FE) and G-type antiferromagnetic (AFM) properties. While, a ferromagnetic (FM) behavior with a Curie temperature of 1.85 K has been found in the EBTO3-δ thin films. Spin-polarized Ti3+ ions, which originated from the VOs, has been proven to mediate a FM coupling between the local Eu 4f spins and were believed to be responsible for the great change of the magnetic ordering. Our work opens up a new avenue for developing FM-FE materials by manipulating the oxygen deficiency in AFM-FE multiferroics.