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Researcher profile

Ruiqi Hu

Ruiqi Hu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciMachine Learning

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Published work

3 published item(s)

preprint2022arXiv

Bi2Se3 Growth on (001) GaAs Substrates for Terahertz Integrated Systems

Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and defense, etc. To date, scientists have used different classes of materials to perform different THz functions. However, to assemble an on-chip THz integrated system, we must understand how to integrate these different materials. Here, we explore the growth of Bi2Se3, a topological insulator (TI) material that could serve as a plasmonic waveguide in THz integrated devices, on technologically-important GaAs (001) substrates. We explore surface treatments and find that atomically smooth GaAs surface is critical to achieving high-quality Bi2Se3 films despite the relatively weak film/substrate interaction. Calculations indicate that the Bi2Se3/GaAs interface is likely selenium-terminated and shows no evidence of chemical bonding between the Bi2Se3 and the substrate. These results are a guide for integrating van der Waals materials with conventional semiconductor substrates and serve as the first steps toward achieving an on-chip THz integrated system.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Strong coupling between a topological insulator and a III-V heterostructure at terahertz frequency

We probe theoretically the emergence of strong coupling in a system consisting of a topological insulator (TI) and a III-V heterostructure using a numerical approach based on the scattering matrix formalism. Specifically, we investigate the interactions between terahertz excitations in a structure composed of Bi$_{2}$Se$_{3}$ and GaAs materials. We find that the interaction between the Bi$_{2}$Se$_{3}$ layer and AlGaAs/GaAs quantum wells with intersubband transitions (ISBTs) in the terahertz frequency regime creates new hybrid modes, namely Dirac plasmon-phonon-ISBT polaritons. The formation of these hybrid modes results in anti-crossings (spectral mode splitting) whose magnitude is an indication of the strength of the coupling. By varying the structural parameters of the constituent materials, our numerical calculations reveal that the magnitude of splitting depends strongly on the doping level and the scattering rate in the AlGaAs/GaAs quantum wells, as well as on the thickness of the GaAs spacer layer that separates the quantum-well structure from the TI layer. Our results reveal the material and device parameters required to obtain experimentally-observable signatures of strong coupling. Our model includes the contribution of an extra two-dimensional hole gas (2DHG) that is predicted to arise at the Bi$_{2}$Se$_{3}$/GaAs interface, based on density functional theory (DFT) calculations that explicitly account for details of the atomic terminations at the interface. The presence of this massive 2DHG at the TI/III-V interface shifts the dispersion of the Dirac plasmon-ISBT polaritons to higher frequencies. The damping rate at this interface, in contrast, compensates the effect of the 2DHG. Finally, we observe that the phonon resonances in the TI layer are crucial to the coupling between the THz excitations in the TI and III-V materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Learning Graph Embedding with Adversarial Training Methods

Graph embedding aims to transfer a graph into vectors to facilitate subsequent graph analytics tasks like link prediction and graph clustering. Most approaches on graph embedding focus on preserving the graph structure or minimizing the reconstruction errors for graph data. They have mostly overlooked the embedding distribution of the latent codes, which unfortunately may lead to inferior representation in many cases. In this paper, we present a novel adversarially regularized framework for graph embedding. By employing the graph convolutional network as an encoder, our framework embeds the topological information and node content into a vector representation, from which a graph decoder is further built to reconstruct the input graph. The adversarial training principle is applied to enforce our latent codes to match a prior Gaussian or Uniform distribution. Based on this framework, we derive two variants of adversarial models, the adversarially regularized graph autoencoder (ARGA) and its variational version, adversarially regularized variational graph autoencoder (ARVGA), to learn the graph embedding effectively. We also exploit other potential variations of ARGA and ARVGA to get a deeper understanding on our designs. Experimental results compared among twelve algorithms for link prediction and twenty algorithms for graph clustering validate our solutions.

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