Nonmagnetic-Doping Induced Quantum Anomalous Hall Effect in Topological Insulators
Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes a daunting challenge for potential applications. Here, a \textit{nonmagnetic}-doping strategy is proposed to produce ferromagnetism and realize QAHE in topological insulators. We numerically demonstrated that magnetic moments can be induced by nitrogen or carbon substitution in BiSe, BiTe, and SbTe, but only nitrogen-doped SbTe exhibits long-range ferromagnetism and preserve large bulk band gap. We further show that its corresponding thin-film can harbor QAHE at temperatures of 17-29 Kelvin, which is two orders of magnitude higher than the typical temperatures in similar systems. Our proposed \textit{nonmagnetic} doping scheme may shed new light in experimental realization of high-temperature QAHE in topological insulators.