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Rui-Rui Du

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Published work

10 published item(s)

preprint2026arXiv

Laughlin pumping assisted by surface acoustic waves

The quantum Hall effect is a fascinating electrical transport phenomenon signified by precise quantization of Hall conductivity $σ_\mathrm{xy}$ and vanishing longitudinal conductivity $σ_\mathrm{xx}$. Laughlin proposed an elegant explanation in which adiabatic insertion of a flux tube pumps charge through the system. This analysis unveils the fundamental role of gauge invariance and provides a compelling argument about the fractional charge of fractional quantum Hall states. While it has been used extensively as a theoretical tool, a quantitative experimental investigation is lacking despite multiple attempts. Here we report successful realizations of Laughlin pumping in several integer and fractional quantum Hall states. One essential technical innovation is using surface acoustic waves to periodically clear the charges accumulated during the pumping process. Magnetic fluxes are inserted at a constant rate so there is no need to perform complicated data fitting. Furthermore, our setting can reliably extract $σ_\mathrm{xx}$ that is several orders of magnitude lower than the limit of conventional techniques. Effective energy gaps can be deduced from the temperature dependence of $σ_\mathrm{xx}$, which are drastically different from those provided by conventional transport data. This work not only brings a famous gedanken experiment to reality but also serves as a portal for many future investigations.

preprint2023arXiv

Insulator-to-metal Mott transition facilitated by lattice deformation in monolayer $α$-RuCl$_3$ on graphite

Creating heterostructures with graphene/graphite is a practical method for charge-doping $α$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy measurements on $α$-RuCl$_3$ with various lattice deformations reveal that both in-plane and out-of-plane lattice distortions may collapse the Mott-gap in the case of monolayer $α$-RuCl$_3$ in proximity to graphite, but have little impact on its bulk form alone. In the Mott-Hubbard framework, the transition is attributed to the lattice distortion-facilitated substantial modulation of the electron correlation parameter. Observation of the orbital textures on a highly compressed monolayer $α$-RuCl$_3$ flake on graphite provides valuable evidence that electrons are efficiently transferred from the heterointerface into Cl3$p$ orbitals under the lattice distortion. It is believed that the splitting of Ru $t_{2g}$ bands within the trigonal distortion of Ru-Cl-Ru octahedra bonds generated the electrons transfer pathways. The increase of the Cl3$p$ states enhance the hopping integral in the Mott-Hubbard bands, resulting in the Mott-transition. These findings suggest a new route for implementing the insulator-to-metal transition upon doping in $α$-RuCl$_3$ by deforming the lattice in addition to the formation of heterostructure.

preprint2022arXiv

Hydrodynamic charge transport in GaAs/AlGaAs ultrahigh-mobility two-dimensional electron gas

Viscous fluid in an ultrahigh-mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs quantum wells is systematically studied through measurements of negative magnetoresistance (NMR) and photoresistance under microwave radiation, and the data are analyzed according to recent theoretical work by e.g., Alekseev, Physical Review Letters 117,166601 (2016). Size-dependent and temperature dependent NMR are found to conform to the theoretical predictions. In particular, transport of 2DEG with relatively weak Coulomb interaction (interparticle interaction parameter r_s<1) manifests a crossover between viscous liquid and viscous gas. The size dependence of microwave induced resistance oscillations and that of the '2nd harmonic' peak indicate that 2DEG in a moderate magnetic field should be regarded as viscous fluid as well. Our results suggest that the hydrodynamic effects must be considered in order to understand semiclassical electronic transport in a clean 2DEG.

preprint2016arXiv

Effective g-factors of carriers in inverted InAs/GaSb bilayers

We perform tilt-field transport experiment on inverted InAs/GaSb which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different carrier densities tuned by gate voltages. When Fermi level stays in the conduction band, we observe LL crossing and anti-crossing behaviors at odd and even filling factors respectively, with a corresponding g-factor of 11.5. It remains nearly constant for varying filling factors and electron densities. On the contrary, for GaSb holes only a small Zeeman splitting is observed even at large tilt angles, indicating a g-factor of less than 3.

preprint2015arXiv

Observation of a Helical Luttinger-Liquid in InAs/GaSb Quantum Spin Hall Edges

We report on the observation of a helical Luttinger-liquid in the edge of InAs/GaSb quantum spin Hall insulator, which shows characteristic suppression of conductance at low temperature and low bias voltage. Moreover, the conductance shows power-law behavior as a function of temperature and bias voltage. The results underscore the strong electron-electron interaction effect in transport of InAs/GaSb edge states. Because of the fact that the Fermi velocity of the edge modes is controlled by gates, the Luttinger parameter can be fine tuned. Realization of a tunable Luttinger-liquid offers a one-dimensional model system for future studies of predicted correlation effects.

preprint2014arXiv

Images of edge current in InAs/GaSb quantum wells

Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport: that is, their measured conductances are much less than $e^2/h$ per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than $h/e^2$, it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature-independent.

preprint2013arXiv

Observation of Quantum Spin Hall States in InAs/GaSb Bilayers under Broken Time-Reversal Symmetry

Topological insulators (TIs) are a novel class of materials with nontrivial surface or edge states. Time-reversal symmetry (TRS) protected TIs are characterized by the Z2 topological invariant and their helical property becomes lost in an applied magnetic field. Currently there exist extensive efforts searching for TIs that are protected by symmetries other than TRS. Here we show, a topological phase characterized by a spin Chern topological invariant is realized in an inverted electron-hole bilayer engineered from indium arsenide-gallium antimonide (InAs/GaSb) semiconductors which retains robust helical edges under a strong magnetic field. Wide conductance plateaus of 2e2/h value are observed; they persist to 12T applied in-plane magnetic field without evidence for transition to a trivial insulator. In a perpendicular magnetic field up to 8T, there exists no signature to the bulk gap closing. While the Fermi energy remains inside the bulk gap, the longitudinal conductance increases from 2e2/h in strong magnetic fields suggesting a trend towards chiral edge transport. Our findings are first evidences for a quantum spin Hall (QSH) insulator protected by a spin Chern invariant. These results demonstrate that InAs/GaSb bilayers are a novel system for engineering the robust helical edge channels much needed for spintronics and for creating and manipulating Majorana particles in solid state.

preprint2011arXiv

Anisotropy of zero-resistance states in InN films under an in-plane magnetic filed

We report low temperature current-voltage measurements on n-type InN films grown by molecular beam epitaxy. The zero-resistance state with a large critical current around 1 mA has been observed at 0.3 K. Under in-plane field configuration, the zero-resistance state shows a large anisotropy in critical current for B parallel and perpendicular to applied current. The ratio of critical current between B parallel and perpendicular to the applied current can be up to 2.5, when B = 0.15T. The anisotropy is explained by the vortex flow in the context of type II superconductivity. We have thus established an important aspect of the phenomenology of superconductivity in an otherwise typical narrow gap semiconductor.

preprint2011arXiv

Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells

We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. Electrostatic gate is used to push the Fermi level into the gap regime, where the conductance as a function of sample length and width is measured. Our analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al [Phys. Rev. Lett., 100, 236601 (2008)]. Edge modes persist inspite of sizable bulk conduction and show only a weak magnetic field dependence - a direct consequence of gap opening away from zone center.

preprint2011arXiv

Perfect Andreev Reflection of Helical Edge Modes in InAs/GaSb Quantum Wells

We present an experimental study of inverted InAs/GaSb composite quantum wells in the hybridization regime and contacted by superconducting electrodes. A front gate is used to vary the Fermi level into the mini-gap, where recent experiments indicate existence of helical edge modes [arXiv:1105.0137]. Zero bias dips in differential resistance are observed across the mini-gap, suggesting transport dominated by Andreev reflection processes. Evolution of the mini-gap differential resistance with applied bias as well as measured mini-gap excess current of 150 nA are in good agreement with the prediction of perfect Andreev reflection of the helical edge modes, which is necessitated by the absence of back-scattering channels. The perfect Andreev reflection occurs in spite of a finite barrier at the interface and shows strong sensitivity to time-reversal breaking - hallmarks of the helical nature of quantum spin Hall edges.