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Source author record

Rossella Brunetti

Rossella Brunetti appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-ph

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Published work

2 published item(s)

preprint2012arXiv

Conduction, diffusion and noise of electrons in amorphous chalcogenides at low electric fields

The low-field electron diffusion, noise, and the conduction in amorphous chalcogenides are investigated by means of a Monte Carlo implementation of a full three- dimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room temperatures and lower. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed for the case of the amorphous Ge2Sb2Te5.

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preprint2012arXiv

Hot-carrier trap-limited transport in switching chalcogenides

Chalcogenide materials have received great attention in the last decade owing to their application in new memory systems. Recently, phase-change memories have, in fact, reached the early stages of production. In spite of the industrial exploitation of such materials, the physical processes governing the switching mechanism are still debated. In this paper we work out a complete and consistent model for transport in amorphous chalcogenide materials based on trap-limited conduction accompanied by carrier heating. A previous model is here extended to include position-dependent carrier concentration and field, consistently linked by the Poisson equation. The results of the new model reproduce the experimental electrical characteristics and their dependences on the device length and temperature. Furthermore, the model provides a sound physical interpretation of the switching phenomenon and is able to give an estimate of the threshold condition in terms of the material parameters, a piece of information of great technological interest.

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