Source author record

Massimo Rudan

Massimo Rudan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci cond-mat.mes-hall physics.comp-ph

Catalog footprint

What is connected

3works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2012arXiv

Conduction, diffusion and noise of electrons in amorphous chalcogenides at low electric fields

The low-field electron diffusion, noise, and the conduction in amorphous chalcogenides are investigated by means of a Monte Carlo implementation of a full three- dimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room temperatures and lower. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed for the case of the amorphous Ge2Sb2Te5.

preprint2012arXiv

Hot-carrier trap-limited transport in switching chalcogenides

Chalcogenide materials have received great attention in the last decade owing to their application in new memory systems. Recently, phase-change memories have, in fact, reached the early stages of production. In spite of the industrial exploitation of such materials, the physical processes governing the switching mechanism are still debated. In this paper we work out a complete and consistent model for transport in amorphous chalcogenide materials based on trap-limited conduction accompanied by carrier heating. A previous model is here extended to include position-dependent carrier concentration and field, consistently linked by the Poisson equation. The results of the new model reproduce the experimental electrical characteristics and their dependences on the device length and temperature. Furthermore, the model provides a sound physical interpretation of the switching phenomenon and is able to give an estimate of the threshold condition in terms of the material parameters, a piece of information of great technological interest.

preprint2011arXiv

Electronic, optical and thermal properties of the hexagonal and fcc Ge2Sb2Te5 chalcogenide from first-principle calculations

We present a comprehensive computational study on the properties of face-centered cubic and hexagonal chalcogenide Ge2Sb2Te5. We calculate the electronic structure using density functional theory (DFT); the obtained density of states (DOS) compares favorably with experiments, also looking suitable for transport analysis. Optical constants including refraction index and absorption coefficient capture major experimental features, aside from an energy shift owed to an underestimate of the band gap that is typical of DFT calculations. We also compute the phonon DOS for the hexagonal phase, obtaining a speed of sound and thermal conductivity in good agreement with the experimental lattice contribution. The calculated heat capacity reaches ~ 1.4 x 106 J/(m3 K) at high temperature, in agreement with experimental data, and provides insight into the low-temperature range (< 150 K), where data are unavailable.