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Researcher profile

Rositza Yakimova

Rositza Yakimova contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2013arXiv

Electron-phonon coupling-induced kinks in the sigma band of graphene

Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the sigma band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cut-off in the Fermi-Dirac distribution. They are therefore not expected for the $σ$ band of graphene that has a binding energy of more than 3.5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cut-off in the density of $σ$ states. The existence of the effect suggests a very weak coupling of holes in the $σ$ band not only to the $π$ electrons of graphene but also to the substrate electronic states. This is confirmed by the presence of such kinks for graphene on several different substrates that all show a strong coupling constant of lambda=1.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Probing of electromagnetic fields on atomic scale by photoelectric phenomena in graphene

We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in 2D crystals and other atomic scale structures can be giantly enhanced by a proper combination of the spectral range and substrate material.

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preprint2011arXiv

Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light

Electronic devices using epitaxial graphene on Silicon Carbide require encapsulation to avoid uncontrolled doping by impurities deposited in ambient conditions. Additionally, interaction of the graphene monolayer with the substrate causes relatively high level of electron doping in this material, which is rather difficult to change by electrostatic gating alone. Here we describe one solution to these problems, allowing both encapsulation and control of the carrier concentration in a wide range. We describe a novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers: a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. Unexposed, the same double layer of polymers works well as capping material, improving the temporal stability and uniformity of the doping level of the sample. By UV exposure of this heterostructure we controlled electrical parameters of graphene in a non-invasive, non-volatile, and reversible way, changing the carrier concentration by a factor of 50. The electronic properties of the exposed SiC/ graphene/polymer heterostructures remained stable over many days at room temperature, but heating the polymers above the glass transition reversed the effect of light. The newly developed photochemical gating has already helped us to improve the robustness (large range of quantizing magnetic field, substantially higher opera- tion temperature and significantly enhanced signal-to-noise ratio due to significantly increased breakdown current) of a graphene resistance standard to such a level that it starts to compete favorably with mature semiconductor heterostructure standards. [2,3]

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preprint2009arXiv

Quantum Resistance Standard Based on Epitaxial Graphene

We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics.

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preprint2009arXiv

SiC Graphene Suitable For Quantum Hall Resistance Metrology

We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several devices produced on distant parts of a single large-area wafer, we can confirm that material synthesized on the Si-terminated face of SiC promises a suitable platform for the implementations of quantum resistance metrology at elevated temperatures and, in the longer term, opens bright prospects for scalable electronics based on graphene.

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