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Researcher profile

Romuald Houdré

Romuald Houdré contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.opticscond-mat.mtrl-scicond-mat.quant-gas

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Published work

2 published item(s)

preprint2014arXiv

High-Q silicon photonic crystal cavity for enhanced optical nonlinearities

We fabricate and experimentally characterize a $H0$ photonic crystal slab nanocavity with a design optimized for maximal quality factor, $Q = 1.7$ million. The cavity, fabricated from a silicon slab, has a resonant mode at $λ= 1.59 \mathrm{μm}$ and a measured $Q$-factor of $400,000$. It displays nonlinear effects, including high-contrast optical bistability, at a threshold power among the lowest ever reported for a silicon device. With a theoretical modal volume as small as $V = 0.34(λ/n)^3$, this cavity ranks among those with the highest $Q/V$ ratios ever demonstrated, while having a small footprint suited for integration in photonic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

All-optical polariton transistor

While optical technology provides the best solution for the transmission of information, optical logics still calls for qualitative new concepts to be explored. Exciton-polaritons are composite particles, resulting from the strong coupling between excitons and photons, which have recently demonstrated exceptional properties like huge non-linearities, long range coherence and suppression of scattering. Here we demonstrate a switching scheme for polaritons moving in the plane of a microcavity which satisfy all the requirements for an all-optical transistor. Under resonant excitation, the power threshold for the nonlinear increase of the polariton density is varied by a weak control beam, obtaining up to 19 times amplification with switching energies in the range of attojoule per square micron. Polariton propagation in the plane of the microcavity is then used to control the switching of a second, spatially separated transistor, opening the way to the implementation of polariton integrated circuits.

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