Source author record

Romuald Houdré

Romuald Houdré appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

physics.optics cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.quant-gas

Catalog footprint

What is connected

3works

4topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2016arXiv

Efficient continuous-wave nonlinear frequency conversion in high-Q Gallium Nitride photonic crystal cavities on Silicon

We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant excitation. Optimized two-dimensional PhC cavities with augmented far-field coupling have been characterized with quality factors as high as 4.4$\times10^{4}$, approaching the computed theoretical values. The strong enhancement in light confinement has enabled efficient SHG, achieving normalized conversion efficiency of 2.4$\times10^{-3}$ $W^{-1}$, as well as simultaneous THG. SHG emission power of up to 0.74 nW has been detected without saturation. The results herein validate the suitability of gallium nitride for integrated nonlinear optical processing.

preprint2014arXiv

High-Q silicon photonic crystal cavity for enhanced optical nonlinearities

We fabricate and experimentally characterize a $H0$ photonic crystal slab nanocavity with a design optimized for maximal quality factor, $Q = 1.7$ million. The cavity, fabricated from a silicon slab, has a resonant mode at $λ= 1.59 \mathrm{μm}$ and a measured $Q$-factor of $400,000$. It displays nonlinear effects, including high-contrast optical bistability, at a threshold power among the lowest ever reported for a silicon device. With a theoretical modal volume as small as $V = 0.34(λ/n)^3$, this cavity ranks among those with the highest $Q/V$ ratios ever demonstrated, while having a small footprint suited for integration in photonic circuits.

preprint2013arXiv

All-optical polariton transistor

While optical technology provides the best solution for the transmission of information, optical logics still calls for qualitative new concepts to be explored. Exciton-polaritons are composite particles, resulting from the strong coupling between excitons and photons, which have recently demonstrated exceptional properties like huge non-linearities, long range coherence and suppression of scattering. Here we demonstrate a switching scheme for polaritons moving in the plane of a microcavity which satisfy all the requirements for an all-optical transistor. Under resonant excitation, the power threshold for the nonlinear increase of the polariton density is varied by a weak control beam, obtaining up to 19 times amplification with switching energies in the range of attojoule per square micron. Polariton propagation in the plane of the microcavity is then used to control the switching of a second, spatially separated transistor, opening the way to the implementation of polariton integrated circuits.