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Researcher profile

Romakanta Bhattarai

Romakanta Bhattarai contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.optics

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Published work

5 published item(s)

preprint2022arXiv

Ferroelectric 2D Antimony Oxides with Wide Bandgaps

The first two-dimensional (2D) polymorphs of antimony dioxide, namely, $γ$-Sb$_2$O$_4$ and $δ$-Sb$_2$O$_4$, are predicted using the evolutionary algorithm combined with first-principles density functional theory (DFT) calculations. Out-of-plane ferroelectricity is found in $γ$-Sb$_2$O$_4$, while in-plane ferroelectricity is found in $δ$-Sb$_2$O$_4$. The predicted dipole moments of $γ$-Sb$_2$O$_4$ and $δ$-Sb$_2$O$_4$ phases are 36.63 and 14.96 eÅ, respectively, implying that they can be good candidates for making ferroelectric devices. The calculations show that doping with other group V elements or applying strain can lower the switching energy barriers and thus facilitate switching. Results from GW calculations show indirect band gaps of 5.51 and 3.39 eV for $γ$-Sb$_2$O$_4$ and $δ$-Sb$_2$O$_4$ in their monolayers, respectively. Raman spectra are calculated to facilitate the experimental investigation of the predicted structures. The existence of both in-plane and out-of-plane 2D ferroelectricity and the large band gaps make this material system particularly interesting for potential applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Pressure-Induced Insulator-Metal Transition in Silicon Telluride from First-Principles Calculations

Silicon telluride (Si2Te3) is a two-dimensional semiconductor with unique structural properties due to the size contrast between Si and Te atoms. A recent experiment shows that the material turns metallic under hydrostatic pressure, while the lattice structure of the metallic phase remains to be identified. In this paper, we propose two metallic phases, M1 and M2, of Si2Te3 using the evolution algorithm and first-principles density functional theory (DFT) calculations. Unlike the presence of Si-Si dimers in the semiconducting (SC) phase, both M1 and M2 phases have individual Si atoms, which play important roles in the metallicity. Analysis of structural properties, electronic properties, dynamical as well as thermal stability is performed. The energies of these new structures are compared with the SC phase under the subsequent hydrostatic pressure up to 12 GPa. The results show that M1 and M2 phases have lower energies under high pressure, thus elucidating the appearance of the metallic phase of Si2Te3. In addition, the external pressure causes the SC phase to have an indirect-direct-indirect bandgap transition. Analysis of Raman spectra of the SC phase at a different pressure shows the shifting of the major Raman peaks, and finally disappearing confirms the phase transition. The results are in good agreement with the experimental observations. The understanding of the insulator-metal phase transition increases the potential usefulness of the material system.

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preprint2020arXiv

Predicting A Novel Phase of 2D SiTe$_2$

Layered IV-VI$_2$ compounds often exist in the CdI$_2$ structure. Using the evolution algorithm and first-principles calculations, we predict a novel layered structure of silicon ditelluride (SiTe$_2$) that is more stable than the CdI$_2$ phase. The structure has a triclinic unit cell in its bulk form and exhibits the competition between the Si atoms' tendency to form tetrahedral bonds and the Te atoms' tendency to form hexagonal close-packing. The electronic and vibrational properties of the predicted phase are investigated. The effective mass of electron is small among 2D semiconductors, which is beneficial for applications such as field-effect transistors. The vibrational Raman and IR spectra are calculated to facilitate future experimental investigations

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preprint2020arXiv

Temperature- and Polarization- Dependent Optical Properties of Single Si2Te3 Nanoplates

We report a combined experimental and computational study of the optical properties of individual silicon telluride (Si2Te3) nanoplates. The p-type semiconductor Si2Te3 has a unique layered crystal structure with hexagonal closed-packed Te sublattices and Si-Si dimers occupying octahedral intercalation sites. The orientation of the silicon dimers leads to unique optical and electronic properties. Two-dimensional Si2Te3 nanoplates with thicknesses of hundreds of nanometers and lateral sizes of tens of micrometers are synthesized by a chemical vapor deposition technique. At temperatures below 150 K, the Si2Te3 nanoplates exhibit a direct band structure with a band gap energy of 2.394 eV at 7 K and an estimated free exciton binding energy of 150 meV. Polarized reflection measurements at different temperatures show anisotropy in the absorption coefficient due to an anisotropic orientation of the silicon dimers, which is in excellent agreement with theoretical calculations of the dielectric functions. Polarized Raman measurements of single Si2Te3 nanoplates at different temperatures reveal various vibrational modes, which agree with density functional perturbation theory calculations. The unique structural and optical properties of nanostructured Si2Te3 hold great potential applications in optoelectronics and chemical sensing.

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preprint2019arXiv

Ultra-High Mechanical Flexibility of 2D Silicon Telluride

Silicon telluride (Si2Te3) is a two-dimensional material with a unique variable structure where the silicon atoms form Si-Si dimers to fill the "metal" sites between the Te layers. The Si-Si dimers have four possible orientations: three in-plane and one out-of-the plane directions. The structural variability of Si2Te3 allows unusual properties especially the mechanical properties. Using results from first-principles calculations, we show that the Si2Te3 monolayer can sustain a uniaxial tensile strain up to 38%, highest among all two-dimensional materials reported. The high mechanical flexibility allows applying mechanical strain to reduce the band gap by 1.4 eV. With increasing strain, the band gap undergoes an unusual indirect-direct-indirect-direct transition. We also show that the uniaxial strain can effectively control the Si-Si dimer alignment, which is beneficial for practical applications.

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