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Researcher profile

Romain Viennois

Romain Viennois contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-con

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Published work

6 published item(s)

preprint2013arXiv

Lattice stability and formation energies of intrinsic defects in Mg2Si and Mg2Ge via first principles simulations

We report an ab initio study of the semiconducting Mg2X (with X = Si, Ge) compounds and in particular we analyze the formation energy of the different point defects with the aim to understand the intrinsic doping mechanisms. We find that the formation energy of Mg2Ge is 50 % larger than the one of Mg2Si, in agreement with the experimental tendency. From the study of the stability and the electronic properties of the most stable defects taking into account the growth conditions, we show that the main reason for the n-doping in these materials comes from interstitial magnesium defects. Conversely, since other defects acting like acceptors such as Mg vacancies or multivacancies are more stable in Mg2Ge than in Mg2Si, this explains why Mg2Ge can be of n or p type, contrary to Mg2Si. The finding that the most stable defects are different in Mg2Si and Mg2Ge and depend on the growth conditions is important and must be taken into account in the search of the optimal doping to improve the thermoelectric properties of these materials.

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preprint2013arXiv

Physical properties of the thermoelectric cubic lanthanum chalcogenides La3-yX4 (X=S,Se,Te) from first-principles

We report ab-initio calculations of the stability, lattice dynamics, electronic and thermoelectric properties of cubic La3-yX4 (X=S,Se,Te) materials in view of analyzing their potential for thermoelectric applications. The lanthanum motions are strongly coupled to the tellurium motions in the telluride, whereas the motions of both types of atoms are decoupled in the sulfides. Nevertheless, this has no impact on their thermal properties because experimentally all compounds have low thermal conductivity. We believe that this is due to Umklapp scattering of the acoustical modes, notably by the low energy optical modes at about 7-8 meV found in all three chalcogenides, as in cage compounds such as skutterudites or clathrates, even though there are no cages in the cubic Th3P4 structure. We find that the energy bandgap increases from the telluride to the sulfide in good agreement with the experiments. However, due to their similar band structure, we find that all three compounds have almost identical thermoelectric properties. Our results agree qualitatively with the experiments, especially in the case of the telluride for which a great amount of data exists. All our results indicate that the sulfides have strong potential for thermoelectricity and could replace the tellurides if the charge carrier concentration is optimized. Finally, we predict also a larger maximum ZT for the p-type doped materials than for the n-type doped ones, even though compounds with p-doping have still to be synthesized. Thus our results indicate the possibility to make high temperature performing thermo-generators based only on La3X4 compounds.

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preprint2012arXiv

Physical properties of thermoelectric zinc antimonide using first-principles calculations

We report first principles calculations of the structural, electronic, elastic and vibrational properties of the semiconducting orthorhombic ZnSb compound. We study also the intrinsic point defects in order to eventually improve the thermoelectric properties of this already very promising thermoelectric material. Concerning the electronic properties, in addition to the band structure, we show that the Zn (Sb) crystallographically equivalent atoms are not exactly equivalent from the electronic point of view. Lattice dynamics, elastic and thermodynamic properties are found to be in good agreement with experiments and they confirm the non equivalency of the zinc and antimony atoms from the vibrational point of view. The calculated elastic properties show a relatively weak anisotropy and the hardest direction is the y direction. We observe the presence of low energy modes involving both Zn and Sb atoms at about 5-6 meV, similarly to what has been found in Zn4Sb3 and we suggest that the interactions of these modes with acoustic phonons could explain the relatively low thermal conductivity of ZnSb. Zinc vacancies are the most stable defects and this explains the intrinsic p-type conductivity of ZnSb.

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preprint2012arXiv

Temperature and time scaling of the peak-effect vortex configuration in FeTe$_{0.7}$Se$_{0.3}$

An extensive study of the magnetic properties of FeTe$_{0.7}$Se$_{0.3}$ crystals in the superconducting state is presented. We show that weak collective pinning, originating from spatial variations of the charge carrier mean free path ($δl$ pinning), rules in this superconductor. Our results are compatible with the nanoscale phase separation observed on this compound and indicate that in spite of the chemical inhomogeneity spatial fluctuations of the critical temperature are not important for pinning. A power law dependence of the magnetization vs time, generally interpreted as signature of single vortex creep regime, is observed in magnetic fields up to $8 ~ T$. For magnetic fields applied along the c axis of the crystal the magnetization curves exhibit a clear peak effect whose position shifts when varying the temperature, following the same dependence as observed in YBa$_2$Cu$_3$O$_{7-δ}$. The time and temperature dependence of the peak position has been investigated. We observe that the occurrence of the peak at a given magnetic field determines a specific vortex configuration that is independent on the temperature. This result indicates that the influence of the temperature on the vortex-vortex and vortex-defect interactions leading to the peak effect in FeTe$_{0.7}$Se$_{0.3}$ is negligible in the explored range of temperatures.

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preprint2011arXiv

Effect of doping on the thermoelectric properties of thallium tellurides using first principles calculations

We present a study of the electronic properties of Tl5Te3, BiTl9Te6 and SbTl9Te6 compounds by means of density functional theory based calculations. The optimized lattice constants of the compounds are in good agreement with the experimental data. The band gap of BiTl9Te6 and SbTl9Te6 compounds are found to be equal to 0.589 eV and 0.538 eV, respectively and are in agreement with the available experimental data. To compare the thermoelectric properties of the different compounds we calculate their thermopower using Mott's law and show, as expected experimentally, that the substituted tellurides have much better thermoelectric properties compared to the pure compound.

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preprint2011arXiv

Physical properties of Thallium-Tellurium based thermoelectric compounds using first-principles simulations

We present a study of the thermodynamic and physical properties of Tl5Te3, BiTl9Te6 and SbTl9Te6 compounds by means of density functional theory based calculations. The optimized lattice constants of the compounds are in good agreement with the experimental data. The electronic density of states and band structures are calculated to understand the bonding mechanism in the three compounds. The indirect band gap of BiTl9Te6 and SbTl9Te6 compounds are found to be equal to 0.256 eV and 0.374 eV, respectively. The spin-orbit coupling has important effects on the electronic structure of the two semiconducting compounds and should therefore be included for a good numerical description of these materials. The elastic constants of the three compounds have been calculated, and the bulk modulus, shear modulus, and young's modulus have been determined. The change from ductile to brittle behavior after Sb or Bi alloying is related to the change of the electronic properties. Finally, the Debye temperature, longitudinal, transverse and average sound velocities have been obtained.

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