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Researcher profile

Roland J. Koch

Roland J. Koch contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.app-ph

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Published work

7 published item(s)

preprint2021arXiv

Correlation-Driven Electron-Hole Asymmetry in Graphene Field Effect Devices

Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of electron-hole asymmetry in graphene and recently in the phase diagram of bilayer graphene has spurred interest into whether it stems from disorder or from fundamental interactions such as correlations. Here, we report an effective new way to access electron-hole asymmetry in 2D materials by directly measuring the quasiparticle self-energy in graphene/Boron Nitride field effect devices. As the chemical potential moves from the hole to the electron doped side, we see an increased strength of electronic correlations manifested by an increase in the band velocity and inverse quasiparticle lifetime. These results suggest that electronic correlations play an intrinsic role in driving electron hole asymmetry in graphene and provide a new insight for asymmetries in more strongly correlated materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

How Substitutional Point Defects in Two-Dimensional WS$_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain

Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step towards impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS$_2$) grown by chemical vapor deposition (CVD) using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (Cr$_{\text{W}}$) and molybdenum (Mo$_{\text{W}}$) at a tungsten site, oxygen at sulfur sites in both bottom and top layers (O$_{\text{S}}$ top/bottom), as well as two negatively charged defects (CDs). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS$_2$ as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Momentum-resolved view of highly tunable many-body effects in a graphene/hBN field-effect device

Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are influenced during device operation. Here, we use micro-focused angle-resolved photoemission in order to analyze many-body interactions in back-gated graphene supported on hexagonal boron nitride. By extracting the doping-dependent quasiparticle dispersion and self-energy, we observe how these interactions renormalize the Dirac cone and impact the electron mobility of our device. Our results are not only limited to a finite energy range around the Fermi level, as in electron transport measurements, but describe interactions on a much wider energy scale, extending beyond the regime of hot carrier excitations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions

Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interface between the TMD and the contacting material. Here, we use spatially resolved photocurrent microscopy to demonstrate electronic uniformity at the epitaxial graphene/molybdenum disulfide (EG/MoS2) interface. A 10x larger photocurrent is extracted at the EG/MoS2 interface when compared to metal (Ti/Au) /MoS2 interface. This is supported by semi-local density-functional theory (DFT), which predicts the Schottky barrier at the EG/MoS2 interface to be ~2x lower than Ti/MoS2. We provide a direct visualization of a 2D material Schottky barrier through combination of angle resolved photoemission spectroscopy with spatial resolution selected to be ~300 nm (nano-ARPES) and DFT calculations. A bending of ~500 meV over a length scale of ~2-3 micrometer in the valence band maximum of MoS2 is observed via nano-ARPES. We explicate a correlation between experimental demonstration and theoretical predictions of barriers at graphene/TMD interfaces. Spatially resolved photocurrent mapping allows for directly visualizing the uniformity of built-in electric fields at heterostructure interfaces, providing a guide for microscopic engineering of charge transport across heterointerfaces. This simple probe-based technique also speaks directly to the 2D synthesis community to elucidate electronic uniformity at domain boundaries alongside morphological uniformity over large areas.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Direct observation of minibands in twisted heterobilayers

Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as new quantum fractal states [1-3] or superconductivity [4, 5]. Recent optical measurements of transition metal dichalcogenide (TMD) heterobilayers have revealed the presence of hybridized interlayer electron-hole pair excitations at energies defined by the superlattice potential [6-10]. The corresponding quasiparticle band structure, so-called minibands, have remained elusive and no such features have been reported for heterobilayers comprised of a TMD and another type of 2D material. Here, we introduce a new X-ray capillary technology for performing micro-focused angle-resolved photoemission spectroscopy (microARPES) with a spatial resolution on the order of 1 $μ$m, enabling us to map the momentum-dependent quasiparticle dispersion of heterobilayers consisting of graphene on WS$_2$ at variable interlayer twist angles ($θ$). Minibands are directly observed for $θ= 2.5^{\circ}$ in multiple mini Brillouin zones (mBZs), while they are absent for a larger twist angle of $θ= 26.3^{\circ}$. These findings underline the possibility to control quantum states via the stacking configuration in 2D heterostructures, opening multiple new avenues for generating materials with enhanced functionality such as tunable electronic correlations [11] and tailored selection rules for optical transitions [12].

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Imaging microscopic electronic contrasts at the interface of single-layer WS$_2$ with oxide and boron nitride substrates

The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and momentum-space electronic structures of electrically contacted single-layer WS$_2$ stacked on hBN, SiO$_2$ and TiO$_2$ substrates. Using work function and X-ray absorption imaging we single-out clean microscopic regions of each interface type and collect the valence band dispersion. We infer the alignments of the electronic band gaps and electron affinities from the measured valence band offsets of WS$_2$ and the three substrate materials using a simple electron affinity rule and discuss the implications for vertical band structure engineering using mixed three- and two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist

Bilayer graphene was theorized to host a moire miniband with flat dispersion if the layers are stacked at specific twist angles known as the magic angles. Recently, such twisted bilayer graphene (tBLG) with the first magic angle twist was reported to exhibit correlated insulating state and superconductivity, where the presence of the flat miniband in the system is thought to be essential for the emergence of these ordered phases in the transport measurements. Tunneling spectroscopy and electronic compressibility measurements in tBLG have revealed a van Hove singularity that is consistent with the presence of the flat miniband. However, a direct observation of the flat dispersion in the momentum-space of such moire miniband in tBLG is still elusive. Here, we report the visualization of the flat moire miniband by using angle-resolved photoemission spectroscopy with nanoscale resolution (nanoARPES). The high spatial resolution in nanoARPES enabled the measurement of the local electronic structure of the tBLG. We clearly demonstrate the existence of the flat moire band near the charge neutrality for tBLG close to the magic angle at room temperature.

0 citations0 reviewsNo code linkedOpen access