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Roger T. Howe

Roger T. Howe appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2016arXiv

Active Control of Probability Amplitudes in a Mesoscale System via Feedback-Induced Suppression of Dissipation and Noise

We introduce a classical potentiostatic feedback mechanism that attenuates the dissipation in a quantum system arising from coupling to the surrounding thermodynamic bath, preserving the inter-state interference in an electronic excitation transfer (EET) process. A three-terminal potentiostat device applies a low-noise voltage bias to the terminals of the EET system and reduces the physical coupling between the quantum system and its environment. We introduce a classical equivalent circuit to model the environment-coupled excitation transfer in an elementary two-state system. This model provides qualitative insight into how classical feedback action affects the transition probabilities between the states and selectively reduces the dissipative coupling for one of the vibronic energy levels of the transfer system. Furthermore, we show that negative feedback results in persistent spectral coherence between the energy level of the decoupled state and the vibronic levels of the complementary state, making the decoupled vibronic channel a probe for characterizing the vibronic structure of the complementary channel of the EET system.

preprint2011arXiv

Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics

We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelectronic device fabrication. Crystal quality is assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device manufacturing is demonstrated through fabrication and characterization of metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55 μm. The substrate fabrication process is compatible with complementary metal-oxide-semiconductor manufacturing and represents a potential route to wafer-scale integration of silicon-compatible optoelectronics.