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Roger Llopis

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cond-mat.mes-hall physics.app-ph

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preprint2020arXiv

Top Dielectric Induced Ambipolarity in an n-channel dual-gated Organic Field Effect Transistor

The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typically, only p-type or n-type operation is realized in an OFET, while the respective counterpart is either suppressed by charge trapping or limited by the injection barrier with the electrodes. Here we show that only the presence of a top dielectric turns an n-type polymer semiconductor (N2200, Polyera ActiveInk) into an ambipolar one, as detected from both bottom and top gated OFET operation. The effect is independent of the channel thickness and the top dielectric combinations. Variable temperature transfer characteristics show that both the electrons and holes can be equally transported through the bulk of the polymer semiconductor.

preprint2020arXiv

Tuning Ambipolarity in a Polymer Field Effect Transistor using Graphene electrodes

Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme thinness and flexibility of graphene. Here, we demonstrate the tuning of the ambipolar nature of the semiconductor polymer N2200 from Polyera ActiveInk by incorporating graphene electrodes in a transistor geometry. Our devices show a balanced ambipolar behavior with high current ON-OFF ratio and charge carrier mobilities. These effects are caused by both the effective energy barrier modulation and by the weak electric field screening effect at the graphene-polymer interface. Our results provide a strategy to integrate 2D graphene electrodes in ambipolar transistors in order to improve and modulate their characteristics, paving the way for the design of novel organic electronic devices.

preprint2016arXiv

A two-dimensional spin field-effect transistor

The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin current for logic operations. The approach followed so far, inspired by the seminal proposal of the Datta and Das spin modulator, has relied on the spin-orbit field as a medium for electrical control of the spin state. However, the still standing challenge is to find a material whose spin-orbit-coupling (SOC) is weak enough to transport spins over long distances, while also being strong enough to allow their electrical manipulation. Here we demonstrate a radically different approach by engineering a heterostructure from atomically thin crystals, which are "glued" by weak van der Waals (vdW) forces and which combine the superior spin transport properties of graphene with the strong SOC of the semiconducting MoS$_{2}$. The spin transport in the graphene channel is modulated between ON and OFF states by tuning the spin absorption into the MoS$_{2}$ layer with a gate electrode. Our demonstration of a spin field-effect transistor using two-dimensional (2D) materials identifies a new route towards spin logic operations for beyond CMOS technology.

preprint2015arXiv

Modulation of Spin Accumulation by Nanoscale Confinement using Electromigration in a Metallic Lateral Spin Valve

We study spin transport in lateral spin valves with constricted channels. Using electromigration, we modulate the spin accumulation by continuously varying the width of the non-magnetic channel at a single location. By fitting the non-local spin signal data as a function of the non-magnetic channel resistance, we extract all the relevant parameters regarding spin transport from a single device. Simulations show that constricting the channel blocks the diffusion of the accumulated spins rather than causing spin flipping. This result could be used to improve the design of future spintronic devices devoted to information processing.