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Researcher profile

Fèlix Casanova

Fèlix Casanova contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phcond-mat.mtrl-sci

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Published work

12 published item(s)

preprint2026arXiv

Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures

Spintronics has emerged as a promising field for next-generation devices, offering functionalities beyond complementary metal-oxide-semiconductor (CMOS). A critical challenge in spintronics is to develop systems that can efficiently generate spin currents and enable their long-distance transport. Here, we demonstrate a graphene (Gr)/heavy metal (HM) heterostructure system that combines strong charge-spin interconversion efficiency, induced by the spin Hall effect, with a long spin diffusion length. By employing an industry-friendly magnetron sputtering technique, we deposit HM layers onto few-layer Gr while minimizing structural damage. The proximity effect from the HM enhances the spin Hall angle of Gr while limiting the reduction in its spin diffusion length. Additionally, the spin Hall angle can be tuned via an applied gate voltage, offering high controllability of the system. Importantly, these properties are observed across heterostructures composed of different HMs, indicating the generality of this approach. Our findings establish Gr/HM heterostructures as a scalable and versatile platform for spin current generation, paving the way for advanced spintronic devices with high efficiency, long spin propagation, and straightforward fabrication processes.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves

Understanding spin physics in graphene is crucial for developing future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and ferromagnets, are best suited for such studies. Here, we report that signals mimicking the inverse Rashba-Edelstein effect can be measured in pristine graphene possessing negligible spin-orbit coupling, confirming that these signals are unrelated to spin-to-charge conversion. We identify either the anomalous Hall effect in the ferromagnet or the ordinary Hall effect in graphene induced by stray fields as the possible sources of this artefact. By quantitatively comparing these options with finite-element-method simulations, we conclude the latter better explains our results. Our study deepens the understanding of spin-to-charge conversion measurement schemes in graphene, which should be taken into account when designing future experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Absence of evidence of spin transport through amorphous Y$_3$Fe$_5$O$_{12}$

Long-distance transport of spin information in insulators without long-range magnetic order has been recently reported. Here, we perform a complete characterization of amorphous Y$_3$Fe$_5$O$_{12}$ (a-YIG) films grown on top of SiO$_2$. We confirm a clear amorphous structure and paramagnetic behavior of our a-YIG films, with semiconducting behavior resistivity that strongly decays with increasing temperature. The non-local transport measurements show a signal which is not compatible with spin transport and can be attributed to the drop of the a-YIG resistivity caused by Joule heating. Our results emphasize that exploring spin transport in amorphous materials requires careful procedures in order to exclude the charge contribution from the spin transport signals.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Differences in the magnon diffusion length for electrically and thermally driven magnon currents in Y$_3$Fe$_5$O$_{12}$

Recent demonstration of efficient transport and manipulation of spin information by magnon currents have opened exciting prospects for processing information in devices. Magnon currents can be driven both electrically and thermally, even in magnetic insulators, by applying charge currents in an adjacent metal layer. Earlier reports in thin yttrium iron garnet (YIG) films suggested that the diffusion length of magnons is independent on the biasing method, but different values were obtained in thicker films. Here, we study the magnon diffusion length for electrically and thermally driven magnon currents in the linear regime in a 2-$μ$m-thick YIG film as a function of temperature and magnetic field. Our results show a decrease of the magnon diffusion length with magnetic field for both biasing methods and at all temperatures from 5 to 300 K, indicating that sub-thermal magnons dominate the long-range transport. Moreover, we demonstrate that the value of the magnon diffusion length depends on the driving mechanism, suggesting that different non-equilibrium magnon distributions are biased for each method. Finally, we demonstrate that the magnon diffusion length for thermally driven magnon currents is independent of the YIG thickness and material growth conditions, confirming that this quantity is an intrinsic parameter of YIG.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe$_2$

The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quantify the SHE in graphene proximitized with WSe$_2$ up to room temperature. Unlike in other graphene/TMD devices, the sole SCC mechanism is the spin Hall effect and no Rashba-Edelstein effect is observed. Importantly, we are able to control the SCC by applying a gate voltage. The SCC shows a high efficiency, measured with an unprecedented SCC length larger than 20 nm. These results show the capability of two-dimensional materials to advance towards the implementation of novel spin-based devices and future applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions

We present and verify experimentally a universal theoretical framework for the description of spin-charge interconversion in non-magnetic metal/insulator structures with interfacial spin-orbit coupling (ISOC). Our formulation is based on drift-diffusion equations supplemented with generalized boundary conditions. The latter encode the effects of ISOC and relate the electronic transport in such systems to spin loss and spin-charge interconversion at the interface, which are parameterized, respectively, by $G_{\parallel/\perp}$ and $σ_{\rm{sc/cs}}$. We demonstrate that the conversion efficiency depends solely on these interfacial parameters. We apply our formalism to two typical spintronic devices that exploit ISOC: a lateral spin valve and a multilayer Hall bar, for which we calculate the non-local resistance and the spin Hall magnetoresistance, respectively. Finally, we perform measurements on these two devices with a BiO$_x$/Cu interface and verify that transport properties related to the ISOC are quantified by the same set of interfacial parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature

Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge current conversion phenomenon of technological relevance, it has sparked wide research interest. However, it has only been measured in graphene/transition metal dichalcogenide van der Waals heterostructures with limited scalability. Here, we experimentally demonstrate spin Hall effect up to room temperature in bilayer graphene combined with a nonmagnetic insulator, an evaporated bismuth oxide layer. The measured spin Hall effect raises most likely from an extrinsic mechanism. With a large spin-to-charge conversion efficiency, scalability, and ease of integration to electronic devices, we show a promising material heterostructure suitable for spin-based device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures

Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experimentally show that a favorable miniaturization law is possible via the use of spin-Hall detection of the in-plane magnetic state of a magnet. This scaling law allows us to obtain a giant signal by spin Hall effect in CoFe/Pt nanostructures and quantify an effective spin-to-charge conversion rate for the CoFe/Pt system. The spin-to-charge conversion can be described as a current source with an internal resistance, i.e., it generates an electromotive force that can be used to drive computing circuits. We predict that the spin-orbit detection of magnetic states can reach high efficiency at reduced dimensions, paving the way for scalable spin-orbit logic devices and memories.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strong interfacial exchange field in a heavy metal/ferromagnetic insulator system determined by spin Hall magnetoresistance

Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many applications. Here, we report the first measurement of the spin Hall magnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS). We perform SMR measurements in a wide range of temperatures and fit the results by using a microscopic model. From this fitting procedure we obtain the temperature dependence of the spin conductances ($G_s$, $G_r$ and $G_i$), disentangling the contribution of field-like torque ($G_i$), damping-like torque ($G_r$), and spin-flip scattering ($G_s$). An interfacial exchange field of the order of 1 meV acting upon the conduction electrons of Pt can be estimated from $G_i$, which is at least three times larger than $G_r$ below the Curie temperature. Our work provides an easy method to quantify this interfacial spin-splitting field, which play a key role in emerging fields such as superconducting spintronics and caloritronics, and topological quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Top Dielectric Induced Ambipolarity in an n-channel dual-gated Organic Field Effect Transistor

The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typically, only p-type or n-type operation is realized in an OFET, while the respective counterpart is either suppressed by charge trapping or limited by the injection barrier with the electrodes. Here we show that only the presence of a top dielectric turns an n-type polymer semiconductor (N2200, Polyera ActiveInk) into an ambipolar one, as detected from both bottom and top gated OFET operation. The effect is independent of the channel thickness and the top dielectric combinations. Variable temperature transfer characteristics show that both the electrons and holes can be equally transported through the bulk of the polymer semiconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tuning Ambipolarity in a Polymer Field Effect Transistor using Graphene electrodes

Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme thinness and flexibility of graphene. Here, we demonstrate the tuning of the ambipolar nature of the semiconductor polymer N2200 from Polyera ActiveInk by incorporating graphene electrodes in a transistor geometry. Our devices show a balanced ambipolar behavior with high current ON-OFF ratio and charge carrier mobilities. These effects are caused by both the effective energy barrier modulation and by the weak electric field screening effect at the graphene-polymer interface. Our results provide a strategy to integrate 2D graphene electrodes in ambipolar transistors in order to improve and modulate their characteristics, paving the way for the design of novel organic electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Large multi-directional spin-to-charge conversion in low symmetry semimetal MoTe$_2$ at room temperature

Efficient and versatile spin-to-charge current conversion is crucial for the development of spintronic applications, which strongly rely on the ability to electrically generate and detect spin currents. In this context, the spin Hall effect has been widely studied in heavy metals with strong spin-orbit coupling. While the high crystal symmetry in these materials limits the conversion to the orthogonal configuration, unusual configurations are expected in low symmetry transition metal dichalcogenide semimetals, which could add flexibility to the electrical injection and detection of pure spin currents. Here, we report the observation of spin-to-charge conversion in MoTe$_2$ flakes, which are stacked in graphene lateral spin valves. We detect two distinct contributions arising from the conversion of two different spin orientations. In addition to the conventional conversion where the spin polarization is orthogonal to the charge current, we also detect a conversion where the spin polarization and the charge current are parallel. Both contributions, which could arise either from bulk spin Hall effect or surface Edelstein effect, show large efficiencies comparable to the best spin Hall metals and topological insulators. Our finding enables the simultaneous conversion of spin currents with any in-plane spin polarization in one single experimental configuration.

0 citations0 reviewsNo code linkedOpen access