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Roderick V. N. Melnik

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Published work

5 published item(s)

preprint2012arXiv

The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots

We study the anisotropic orbital effect in the electric field tunability of the phonon induced spin-flip rate in quantum dots (QDs). Our study shows that anisotropic gate potential enhances the spin-flip rate and reduces the level crossing point to a lower quantum dot radius due to the suppression of the Land$\acute{e}$ g-factor towards bulk crystal. In the range of $10^4-10^6$ V/cm, the electric field tunability of the phonon induced spin-flip rate can be manipulated through strong Dresselhaus spin-orbit coupling. These results might assist the development of a spin based solid state quantum computer by manipulating phonon induced spin-flip rate through spin-orbit coupling with the application of anisotropic gate potential in a regime where the g-factor changes its sign.

preprint2011arXiv

Excitation of plasmons in two-dimensional electron gas with defects by microwaves: Wake-field method

We develop an analytical method to find plasmons generated by microwaves in a two-dimensional electron gas with defects. The excitations are expressed in terms of the wake field of a charged particle moving in plasma. The result explicitly addresses the efficiency of the photon-to-plasmon conversion and the type of excitation. While strong absorption of the radiation by the excitations is reached at larger plasmon wave numbers, intense persistent plasma waves are created at optimal ones. The latter wave numbers depend on the spectrum of plasmons and the distance that the waves are required to travel without being substantially attenuated. Their type, which can be traveling or standing, is governed by the geometry of the defects and the polarization of the radiation. We identify such types of traveling plasmons as circular plasmons, excited at dot defects, and traverse plasmons, excited at straight wire defects and traveling away from (toward) the wires if their group velocity is positive (negative). Nonlinear excitations are also accounted for. In particular, we analyze the zeroth harmonic, linear in the microwave intensity, which has the character of a frozen charge density wave. The interference of elementary wakes from defects arranged in truncated periodic sets can produce amplified plasmons, which are easily portrayed.

preprint2010arXiv

Spin-orbit interaction in three-dimensionally bounded semiconductor nanostructures

The structural inversion asymmetry-induced spin-orbit interaction of conduction band electrons in zinc-blende and wurtzite semiconductor structures is analysed allowing for a three-dimensional (3D) character of the external electric field and variation of the chemical composition. The interaction, taking into account all remote bands perturbatively, is presented with two contributions: a heterointerface term and a term caused by the external electric field. They have generally comparable strength and can be written in a unified manner only for 2D systems, where they can partially cancel each other. For quantum wires and dots composed of wurtzite semiconductors new terms appear, absent in zinc-blende structures, which acquire the standard Rashba form in 2D systems.

preprint2007arXiv

Coupled Effects in Quantum Dot Nanostructures with Nonlinear Strain and Bridging Modelling Scales

We demonstrate that the conventional application of linear models to the analysis of optoelectromechanical properties of nanostructures in bandstructure engineering could be inadequate. The focus of the present paper is on a model based on the coupled Schrodinger-Poisson system where we account consistently for the piezoelectric effect and analyze the influence of different nonlinear terms in strain components. The examples given in this paper show that the piezoelectric effect contributions are essential and have to be accounted for with fully coupled models. While in structural applications of piezoelectric materials at larger scales, the minimization of the full electromechanical energy is now a routine in many engineering applications, in bandstructure engineering conventional approaches are still based on linear models with minimization of uncoupled, purely elastic energy functionals with respect to displacements. Generalizations of the existing models for bandstructure calculations are presented in this paper in the context of coupled effects.

preprint2007arXiv

Effect of Internal Viscosity on Brownian Dynamics of DNA Molecules in Shear Flow

The results of Brownian dynamics simulations of a single DNA molecule in shear flow are presented taking into account the effect of internal viscosity. The dissipative mechanism of internal viscosity is proved necessary in the research of DNA dynamics. A stochastic model is derived on the basis of the balance equation for forces acting on the chain. The Euler method is applied to the solution of the model. The extensions of DNA molecules for different Weissenberg numbers are analyzed. Comparison with the experimental results available in the literature is carried out to estimate the contribution of the effect of internal viscosity.