Researcher profile

Roberto Buizza

Roberto Buizza contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Weather-inspired ensemble-based probabilistic prediction of COVID-19

The objective of this work is to predict the spread of COVID-19 starting from observed data, using a forecast method inspired by probabilistic weather prediction systems operational today. Results show that this method works well for China: on day 25 we could have predicted well the outcome for the next 35 days. The same method has been applied to Italy and South Korea, and forecasts for the forthcoming weeks are included in this work. For Italy, forecasts based on data collected up to today (24 March) indicate that number of observed cases could grow from the current value of 69,176, to between 101k-180k, with a 50% probability of being between 110k-135k. For South Korea, it suggests that the number of observed cases could grow from the current value of 9,018 (as of the 23rd of March), to values between 8,500 and 9,300, with a 50% probability of being between 8,700 and 8,900. We conclude by suggesting that probabilistic disease prediction systems are possible and could be developed following key ideas and methods from weather forecasting. Having access to skilful daily updated forecasts could help taking better informed decisions on how to manage the spread of diseases such as COVID-19.

preprint2012arXiv

Graphene growth on h-BN by Molecular Beam Epitaxy

The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.