Reaction pathways of BCl for acceptor delta-doping of silicon
BCl is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed understanding of adsorption and dissociation pathways for this precursor. Here, we use density functional theory and scanning tunneling microscopy (STM) to identify and explore these pathways for BCl on Si(100) at different annealing temperatures. We demonstrate that BCl adsorbs selectively without a reaction barrier, and subsequently dissociates relatively easily with reaction barriers 1 eV. Using this dissociation pathway, we parameterize a Kinetic Monte Carlo model to predict B incorporation rates as a function of dosing conditions. STM is used to image BCl adsorbates, identifying several surface configurations and tracking the change in their distribution as a function of the annealing temperature, matching predictions of the kinetic model well. This straightforward pathway for atomic-precision acceptor doping helps enable a wide range of applications including bipolar nanoelectronics, acceptor-based qubits, and superconducting Si.