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Ritam Sarkar

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3 published item(s)

preprint2026arXiv

Context-Aware Pesticide Recommendation via Few-Shot Pest Recognition for Precision Agriculture

Effective pest management is crucial for enhancing agricultural productivity, especially for crops such as sugarcane and wheat that are highly vulnerable to pest infestations. Traditional pest management methods depend heavily on manual field inspections and the use of chemical pesticides. These approaches are often costly, time-consuming, labor-intensive, and can have a negative impact on the environment. To overcome these challenges, this study presents a lightweight framework for pest detection and pesticide recommendation, designed for low-resource devices such as smartphones and drones, making it suitable for use by small and marginal farmers. The proposed framework includes two main components. The first is a Pest Detection Module that uses a compact, lightweight convolutional neural network (CNN) combined with prototypical meta-learning to accurately identify pests even when only a few training samples are available. The second is a Pesticide Recommendation Module that incorporates environmental factors like crop type and growth stage to suggest safe and eco-friendly pesticide recommendations. To train and evaluate our framework, a comprehensive pest image dataset was developed by combining multiple publicly available datasets. The final dataset contains samples with different viewing angles, pest sizes, and background conditions to ensure strong generalization. Experimental results show that the proposed lightweight CNN achieves high accuracy, comparable to state-of-the-art models, while significantly reducing computational complexity. The Decision Support System additionally improves pest management by reducing dependence on traditional chemical pesticides and encouraging sustainable practices, demonstrating its potential for real-time applications in precision agriculture.

preprint2022arXiv

Scaling nanowire-supported GaN quantum dots to the sub-10-nm limit, yielding complete suppression of the giant built-in potential

The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature single photon generation, in particular. While GaN-NWQDs have several promising attributes, the crucial challenge in exploiting their full potential, is to reduce the lateral dimensions of the QDs, to the order of the exciton Bohr-radius in GaN. Also critical is to suppress the built-in electric field due to spontaneous and piezoelectric polarization, which adversely affects the radiative recombination lifetime. We report here the innovation of a simple yet powerful single-step epitaxial growth technique, to achieve both of these targets. By combining controlled and on-demand thermal decomposition of GaN nanowires, with our previously-developed strategy of inhibiting the same via AlN-capping, we demonstrate that the NWQD-diameter can indeed be reduced to the truly strong-quantum-confinement limit. In these ultra-scaled GaN QDs, we show that the built-in electric fields are almost completely suppressed. The NWQD fabrication-strategy developed in this work may pave the way for fabrication of highly efficient classical and quantum UV-emitters based on GaN.

preprint2016arXiv

Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si(111) substrates by plasma assisted molecular beam epitaxy technique

The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) technique under various growth conditions. GaN NWs exhibiting different shapes, sizes and distribution were grown at various substrate temperatures with same Ga-N (III-V) ratio of 0.4. We observe that sample grown at lower substrate temperature (~700 degC) results 2-dimensional island like structure with almost very little (~30%) circularity while increasing substrate temperature (>770 degC) leads to growth of individual GaN NW (>80% circularity) with excellent structural properties. The temperature dependent photoluminescence measurement together with analysis of RAMAN active modes provides legitimate evidences of strong correlation between the structure and optical properties GaN nanowires grown on Si substrates.