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D. Saha

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cond-mat.mtrl-sci physics.plasm-ph

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preprint2016arXiv

Comprehensive investigation on the correlation of growth, structural and optical properties of GaN nanowires grown on Si(111) substrates by plasma assisted molecular beam epitaxy technique

The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) technique under various growth conditions. GaN NWs exhibiting different shapes, sizes and distribution were grown at various substrate temperatures with same Ga-N (III-V) ratio of 0.4. We observe that sample grown at lower substrate temperature (~700 degC) results 2-dimensional island like structure with almost very little (~30%) circularity while increasing substrate temperature (>770 degC) leads to growth of individual GaN NW (>80% circularity) with excellent structural properties. The temperature dependent photoluminescence measurement together with analysis of RAMAN active modes provides legitimate evidences of strong correlation between the structure and optical properties GaN nanowires grown on Si substrates.

preprint2014arXiv

Intrinsic Noise Induced Coherence Resonance in a Glow discharge Plasma

Experimental evidence of intrinsic noise induced coherence resonance in a glow discharge plasma is being reported. Initially the system is started at a discharge voltage (DV) where it exhibited fixed point dynamics, and then with the subsequent increase in the DV spikes were excited which were few in number and with further increase of DV the number of spikes as well as their regularity increased. The regularity in the interspike interval of the spikes is estimated using normalized variance (NV). Coherence resonance was determined using normalized variance curve and also corroborated by Hurst exponent and power spectrum plots. We show that the regularity of the excitable spikes in the floating potential fluctuation increases with the increase in the DV, upto a particular value of DV. Using a Wiener filter, we separated the noise component which was observed to increase with DV and hence conjectured that noise can be playing an important role in the generation of the coherence resonance. From an anharmonic oscillator equation describing ion acoustic oscillations, we have been able to obtain a FHN like model which has been used to understand the excitable dynamics of glow discharge plasma in the presence of noise. The numerical results agree quite well with the experimental results.

preprint2013arXiv

Disorder-driven carrier transport in atomic layer deposited ZnO thin films

This paper addresses the effect of disorder on the carrier transport mechanism of atomic layer deposited ZnO thin films as has been investigated by temperature dependent electrical resistivity measurements in the temperature range of 4.2K to 300K. Films were grown on (0001) sapphire substrate at different substrate temperatures varying from 150 to 350 C. The defects and structural disorder in the films were found to be strongly dependent on their growth temperature. The films grown at 150, 300 and 350 C were found to be semiconductor-like in the whole measurement temperature range of resistivity due to the enhanced disorder in these films. However, a metal to semiconductor transition (MST) at low temperature has been observed in the films grown at 200 and 250 C. It was also observed that the film grown at 250 C with higher residual resistivity, the transition temperature shifted towards the higher value due to the increased disorder in this film as compared to that grown at 200 C. The upturn in resistivity below the transition temperature has been well explained by considering quantum corrections to the Boltzmanns conductivity which includes the effect of weak localization and coulomb electron-electron interactions related to the existence of disorder in these films.