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Researcher profile

Rita Maji

Rita Maji contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2022arXiv

Comparison of long-range corrected kernels and range-separated hybrids for excitons in solids

The most accurate theoretical method to describe excitons is the solution of the Bethe-Salpeter equation in the GW approximation (GW-BSE). However, because of its computation cost, time-dependent density functional theory (TDDFT) is becoming the alternative approach to GW-BSE to describe excitons in solids. Nowadays, the most efficient strategy to describe optical spectra of solids in TDDFT is to use long-range corrected exchange-correlation kernels on top of GW or scissor-corrected energies. In recent years, a different strategy based on range-separated hybrid functionals started to be developed in the framework of time-dependent generalised Kohn-Sham density functional theory (TDGKSDFT). Here, we compare the performance of long-range corrected kernels with range-separated hybrid functionals for the description of excitons in solids. This comparison has the purpose to weight the pros and cons of using range-separated hybrid functionals, giving new perspectives for theoretical developments of these functionals. We illustrate the comparison for the case of Si and LiF, representative of solid state excitons.

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preprint2022arXiv

Effect of Strain on Interactions of Σ3{111} Silicon Grain Boundary with Oxygen Impurities from First Principles

The interaction of grain boundaries (GBs) with inherent defects and/or impurity elements in multi-crystalline silicon play a decisive role in their electrical behavior. Strain, depending on the types of GBs and defects, plays an important role in these systems. Herein, the correlation between the structural and electronic properties of Σ 3{111} Si-GB in the presence of interstitial oxygen impurities is studied from the first-principles framework, considering the global and local model of strain. It is observed that the distribution of strain along with the number of impurity atoms modifies the energetics of the material. However, the electronic properties of the considered Si-GBs are not particularly affected by the strain and by the oxygen impurities, unless a very high local distortion induces additional structural defects.

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preprint2022arXiv

Insight into the inclusion of heteroatom impurities in Silicon structures

The bonding properties of tilt boundary in poly-silicon and the effect of interstitial impurities are investigated by first-principles. In order to obtain thorough information on the nature of chemical bondings in these solid systems, an accurate topological analysis is performed, through partitioning of the electron localization function. Although the mechanism of segregation of single light impurities, such as carbon, nitrogen, and oxygen in Si-based systems is known, it is only in the presence of multiple segregations that the distinctive structures of the various interstitial impurities emerge. The structural analysis of the modified Si systems and the comparison with the corresponding molecular structure within these solid phases provide an adequate description of interesting properties, for which bond charges provide more insight than bond length. It is shown that, in the presence of isovalent carbon, all systems try to preserve the tetrahedral coordination, on the contrary, trivalent nitrogen induces a strong local distortion to fit in the tetrahedral Si matrix while oxygen is the impurity that segregates more easily and more regularly. This work shows that impurities lead to local distortions and how the electron distribution rearranges to smooth it. Overall, it shows how the analysis of bonds and their correlation with energetics and electronic structure is of fundamental importance for the understanding of the defects induced properties and of the basic mechanisms that influence them.

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preprint2022arXiv

Revealing the role of Σ3{112} Si grain boundary local structures in impurity segregation

The interfacial structure of a silicon grain boundary (Si-GB) plays a decisive role on its chemical functionalization and has implications in diverse physical-chemical properties of the material. Therefore, GB interface is particularly relevant when the material is employed in high performance technological applications. Here, we studied from first principles the role of GB interface by providing an atomistic understanding of two different $Σ$3\{112\} Si-GB models. These models are (1$\times$1) and (1$\times$2) $Σ$3\{112\} Si-GBs which lead to different structural reconstruction. Starting from these two models, we have shown that geometry optimization has an important role on the structural reconstruction of the GB interface and therefore on its properties. For this reason, we discussed different methodologies to define an optimal relaxation protocol. The influence of the local structures in (1$\times$1) and (1$\times$2) models have also been investigated in the presence of vacancies where different light impurities of different valency (C, N, H, O) can segregate. We studied how local structures in (1$\times$1) and (1$\times$2) models are modified by the presence of vacancies and impurities. These structural modifications have been correlated with the changes of the energetics and electronic properties of the GBs. The behavior of (1$\times$1) and (1$\times$2) models demonstrated to be significantly different. The interaction with vacancies and the segregation of C, N, H and O are significantly different depending on the type of local structures present in $Σ$3\{112\} Si-GB.

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preprint2022arXiv

The role of Si vacancies in the segregation of O, C, and N at silicon grain boundaries: An ab initio study

Grain boundaries (GBs) are defects originating in multi-crystalline silicon during crystal growth for device Si solar cell fabrication. The presence of GBs changes the coordination of Si, making it advantageous for charge carriers to recombine, which brings a significant reduction of carrier lifetimes. Therefore, GBs can be highly detrimental for device performances. Furthermore, GBs easily form vacancies with deep defect electronic states and are also preferential segregation sites for various impurity species, such as C, N, and O. We studied from first principles the correlation between structural, energetics, and electronic properties of the $Σ$3{111} Si GB with and without vacancies, and the segregation of C, N, and O atoms. C and O atoms strongly increase their ability to segregate when vacancies are present. However, the electronic properties of the $Σ$3{111} Si GB are not affected by the presence of O, while they can strongly change in the case of C. For N atoms, it is not possible to find a clear trend in the energetics and electronic properties both with and without vacancies in the GB. In fact, as N is not isovalent with Si, as C and O, it is more flexible in finding new chemical arrangements in the GB structure. This implies a stronger difficulty in controlling the properties of the material in the presence of N impurity atoms compared to C and O impurities.

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