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Eleonora Luppi

Eleonora Luppi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.chem-phphysics.comp-phphysics.atom-ph

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Published work

12 published item(s)

preprint2022arXiv

Comparison of long-range corrected kernels and range-separated hybrids for excitons in solids

The most accurate theoretical method to describe excitons is the solution of the Bethe-Salpeter equation in the GW approximation (GW-BSE). However, because of its computation cost, time-dependent density functional theory (TDDFT) is becoming the alternative approach to GW-BSE to describe excitons in solids. Nowadays, the most efficient strategy to describe optical spectra of solids in TDDFT is to use long-range corrected exchange-correlation kernels on top of GW or scissor-corrected energies. In recent years, a different strategy based on range-separated hybrid functionals started to be developed in the framework of time-dependent generalised Kohn-Sham density functional theory (TDGKSDFT). Here, we compare the performance of long-range corrected kernels with range-separated hybrid functionals for the description of excitons in solids. This comparison has the purpose to weight the pros and cons of using range-separated hybrid functionals, giving new perspectives for theoretical developments of these functionals. We illustrate the comparison for the case of Si and LiF, representative of solid state excitons.

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preprint2022arXiv

Effect of Strain on Interactions of Σ3{111} Silicon Grain Boundary with Oxygen Impurities from First Principles

The interaction of grain boundaries (GBs) with inherent defects and/or impurity elements in multi-crystalline silicon play a decisive role in their electrical behavior. Strain, depending on the types of GBs and defects, plays an important role in these systems. Herein, the correlation between the structural and electronic properties of Σ 3{111} Si-GB in the presence of interstitial oxygen impurities is studied from the first-principles framework, considering the global and local model of strain. It is observed that the distribution of strain along with the number of impurity atoms modifies the energetics of the material. However, the electronic properties of the considered Si-GBs are not particularly affected by the strain and by the oxygen impurities, unless a very high local distortion induces additional structural defects.

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preprint2022arXiv

Insight into the inclusion of heteroatom impurities in Silicon structures

The bonding properties of tilt boundary in poly-silicon and the effect of interstitial impurities are investigated by first-principles. In order to obtain thorough information on the nature of chemical bondings in these solid systems, an accurate topological analysis is performed, through partitioning of the electron localization function. Although the mechanism of segregation of single light impurities, such as carbon, nitrogen, and oxygen in Si-based systems is known, it is only in the presence of multiple segregations that the distinctive structures of the various interstitial impurities emerge. The structural analysis of the modified Si systems and the comparison with the corresponding molecular structure within these solid phases provide an adequate description of interesting properties, for which bond charges provide more insight than bond length. It is shown that, in the presence of isovalent carbon, all systems try to preserve the tetrahedral coordination, on the contrary, trivalent nitrogen induces a strong local distortion to fit in the tetrahedral Si matrix while oxygen is the impurity that segregates more easily and more regularly. This work shows that impurities lead to local distortions and how the electron distribution rearranges to smooth it. Overall, it shows how the analysis of bonds and their correlation with energetics and electronic structure is of fundamental importance for the understanding of the defects induced properties and of the basic mechanisms that influence them.

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preprint2022arXiv

Photoionization and core resonances from range-separated density-functional theory: General formalism and example of the beryllium atom

We explore the merits of linear-response range-separated time-dependent density-functional theory (TDDFT) for the calculation of photoionization spectra. We consider two variants of range-separated TDDFT, namely the timedependent range-separated hybrid (TDRSH) scheme which uses a global range-separation parameter and the timedependent locally range-separated hybrid (TDLRSH) which uses a local range-separation parameter, and compare with standard time-dependent local-density approximation (TDLDA) and time-dependent Hartree-Fock (TDHF). We show how to calculate photoionization spectra with these methods using the Sternheimer approach formulated in a nonorthogonal B-spline basis set with appropriate frequency-dependent boundary conditions. We illustrate these methods on the photoionization spectrum of the Be atom, focusing in particular on the core resonances. Both the TDRSH and TDLRSH photoionization spectra are found to constitute a large improvement over the TDLDA photoionization spectrum and a more modest improvement over the TDHF photoionization spectrum.

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preprint2022arXiv

Photoionization and core resonances from range-separated time-dependent density-functional theory for open-shell states: Example of the lithium atom

We consider the calculations of photoionization spectra and core resonances of open-shell systems using range-separated time-dependent density-functional theory. Specifically, we use the time-dependent range-separated hybrid (TDRSH) scheme, combining a long-range Hartree-Fock (HF) exchange potential and kernel with a short-range potential and kernel from a local density-functional approximation, and the time-dependent locally range-separated hybrid (TDLRSH) scheme, which uses a local range-separation parameter. To efficiently perform the calculations, we formulate a spin-unrestricted linear-response Sternheimer approach in a non-orthogonal B-spline basis set and using appropriate frequency-dependent boundary conditions. We illustrate this approach on the Li atom, which suggests that TDRSH and TDLRSH are adequate simple methods for estimating single-electron photoionization spectra of open-shell systems.

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preprint2022arXiv

Revealing the role of Σ3{112} Si grain boundary local structures in impurity segregation

The interfacial structure of a silicon grain boundary (Si-GB) plays a decisive role on its chemical functionalization and has implications in diverse physical-chemical properties of the material. Therefore, GB interface is particularly relevant when the material is employed in high performance technological applications. Here, we studied from first principles the role of GB interface by providing an atomistic understanding of two different $Σ$3\{112\} Si-GB models. These models are (1$\times$1) and (1$\times$2) $Σ$3\{112\} Si-GBs which lead to different structural reconstruction. Starting from these two models, we have shown that geometry optimization has an important role on the structural reconstruction of the GB interface and therefore on its properties. For this reason, we discussed different methodologies to define an optimal relaxation protocol. The influence of the local structures in (1$\times$1) and (1$\times$2) models have also been investigated in the presence of vacancies where different light impurities of different valency (C, N, H, O) can segregate. We studied how local structures in (1$\times$1) and (1$\times$2) models are modified by the presence of vacancies and impurities. These structural modifications have been correlated with the changes of the energetics and electronic properties of the GBs. The behavior of (1$\times$1) and (1$\times$2) models demonstrated to be significantly different. The interaction with vacancies and the segregation of C, N, H and O are significantly different depending on the type of local structures present in $Σ$3\{112\} Si-GB.

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preprint2022arXiv

The role of Si vacancies in the segregation of O, C, and N at silicon grain boundaries: An ab initio study

Grain boundaries (GBs) are defects originating in multi-crystalline silicon during crystal growth for device Si solar cell fabrication. The presence of GBs changes the coordination of Si, making it advantageous for charge carriers to recombine, which brings a significant reduction of carrier lifetimes. Therefore, GBs can be highly detrimental for device performances. Furthermore, GBs easily form vacancies with deep defect electronic states and are also preferential segregation sites for various impurity species, such as C, N, and O. We studied from first principles the correlation between structural, energetics, and electronic properties of the $Σ$3{111} Si GB with and without vacancies, and the segregation of C, N, and O atoms. C and O atoms strongly increase their ability to segregate when vacancies are present. However, the electronic properties of the $Σ$3{111} Si GB are not affected by the presence of O, while they can strongly change in the case of C. For N atoms, it is not possible to find a clear trend in the energetics and electronic properties both with and without vacancies in the GB. In fact, as N is not isovalent with Si, as C and O, it is more flexible in finding new chemical arrangements in the GB structure. This implies a stronger difficulty in controlling the properties of the material in the presence of N impurity atoms compared to C and O impurities.

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preprint2016arXiv

Gaussian continuum basis functions for calculating high-harmonic generation spectra

We explore the computation of high-harmonic generation spectra by means of Gaussian basis sets in approaches propagating the time-dependent Schr{ö}dinger equation. We investigate the efficiency of Gaussian functions specifically designed for the description of the continuum proposed by Kaufmann et al. [J. Phys. B 22, 2223 (1989)]. We assess the range of applicability of this approach by studying the hydrogen atom, i.e. the simplest atom for which "exact" calculations on a grid can be performed. We notably study the effect of increasing the basis set cardinal number, the number of diffuse basis functions, and the number of Gaussian pseudo-continuum basis functions for various laser parameters. Our results show that the latter significantly improve the description of the low-lying continuum states, and provide a satisfactory agreement with grid calculationsfor laser wavelengths $λ$0 = 800 and 1064 nm. The Kaufmann continuum functions therefore appear as a promising way of constructing Gaussian basis sets for studying molecular electron dynamics in strong laser fields using time-dependent quantum-chemistry approaches.

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preprint2016arXiv

Self-consistent double-hybrid density-functional theory using the optimized-effective-potential method

We introduce an orbital-optimized double-hybrid (DH) scheme using the optimized-effective-potential (OEP) method. The orbitals are optimized using a local potential corresponding to the complete exchange-correlation energy expression including the second-order M{ø}ller-Plesset (MP2) correlation contribution. We have implemented a one-parameter version of this OEP-based self-consistent DH scheme using the BLYP density-functional approximation and compared it to the corresponding non-self-consistent DH scheme for calculations on a few closed-shell atoms and molecules. While the OEP-based self-consistency does not provide any improvement for the calculations of ground-state total energies and ionization potentials, it does improve the accuracy of electron affinities and restores the meaning of the LUMO orbital energy as being connected to a neutral excitation energy. Moreover, the OEP-based self-consistent DH scheme provides reasonably accurate exchange-correlation potentials and correlated densities.

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preprint2015arXiv

Basis convergence of range-separated density-functional theory

Range-separated density-functional theory is an alternative approach to Kohn-Sham density-functional theory. The strategy of range-separated density-functional theory consists in separating the Coulomb electron-electron interaction into long-range and short-range components, and treating the long-range part by an explicit many-body wave-function method and the short-range part by a density-functional approximation. Among the advantages of using many-body methods for the long-range part of the electron-electron interaction is that they are much less sensitive to the one-electron atomic basis compared to the case of the standard Coulomb interaction. Here, we provide a detailed study of the basis convergence of range-separated density-functional theory. We study the convergence of the partial-wave expansion of the long-range wave function near the electron-electron coalescence. We show that the rate of convergence is exponential with respect to the maximal angular momentum L for the long-range wave function, whereas it is polynomial for the case of the Coulomb interaction. We also study the convergence of the long-range second-order M{ø}ller-Plesset correlation energy of four systems (He, Ne, N2, and H2O) with the cardinal number X of the Dunning basis sets cc-p(C)VXZ, and find that the error in the correlation energy is best fitted by an exponential in X. This leads us to propose a three-point complete-basis-set extrapolation scheme for range-separated density-functional theory based on an exponential formula.

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preprint2010arXiv

Ab Initio Second-Order Nonlinear Optics in Solids: Second-Harmonic Generation Spectroscopy from Time-Dependent Density-Functional Theory

We present in detail the formulation of the ab initio theory we have developed for the calculation of the macroscopic second-order susceptibility $χ^{(2)}$. We find a general expression for $χ^{(2)}$ valid for any fields, containing the ab initio relation between the \textit{microscopic} and \textit{macroscopic} formulation of the second-order responses. We consider the long wavelength limit and we develop our theory in the Time-Dependent Density-Functional Theory framework. This allows us to include straightforwardly many-body effects such as crystal local-field and excitonic effects. We compute the Second-Harmonic Generation spectra for the cubic semiconductors SiC, AlAs and GaAs and starting from the Independent-Particle Approximation for $χ^{(2)}$, we include quasiparticle effects via the scissors operator, crystal local-field and excitonic effects. In particular, we consider two different types of kernels: the ALDA and the "long-range" kernel. We find good agreement with other theoretical calculations and experiments presented in literature, showing the importance of very accurate description of the many-body interactions.

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preprint2010arXiv

Second-Order Nonlinear Optics from First Principles

We present a new first-principle theory for the calculation of the macroscopic second-order susceptibility chi^(2), based on the Time-Dependent Density-Functional Theory approach. Our method allows to include straightforwardly the many-body effects. We apply the theory to the computation of the Second-Harmonic Generation spectroscopy, showing a very good agreement with experiment for cubic semiconductor GaAs.

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