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Richard R. Grote

Richard R. Grote contributes to research discovery and scholarly infrastructure.

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physics.optics cond-mat.mes-hall quant-ph

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preprint2016arXiv

Near-Infrared-Assisted Charge Control and Spin Readout of the Nitrogen-Vacancy Center in Diamond

We utilize nonlinear absorption to design all-optical protocols that improve both charge state initialization and spin readout for the nitrogen-vacancy (NV) center in diamond. Non-monotonic variations in the equilibrium charge state as a function of visible and near-infrared (NIR) optical power are attributed to competing multiphoton absorption processes. In certain regimes, multicolor illumination enhances the steady-state population of the NV's negative charge state above 90%. At higher NIR intensities, selective ionization of the singlet manifold facilitates a protocol for spin-to-charge conversion that dramatically enhances the spin readout fidelity. We demonstrate a 6-fold increase in the signal-to-noise ratio for single-shot spin measurements and predict an orders-of-magnitude experimental speedup over traditional methods for emerging applications in magnetometry and quantum information science using NV spins.

preprint2016arXiv

Single-Mode Optical Waveguides on Native High-Refractive-Index Substrates

High-refractive-index semiconductor optical waveguides form the basis for modern photonic integrated circuits (PICs) , but the conventional methods of achieving optical confinement require a thick lower-refractive-index support layer that impedes large-scale co-integration with electronics. To address this challenge, we present a general architecture for single-mode waveguides that confine light in a high-refractive-index material on a native substrate. Our waveguide consists of a high-aspect-ratio fin of the guiding material surrounded by lower-refractive-index dielectrics and is compatible with standard top-down fabrication techniques. The proposed waveguide geometry removes the need for a buried-oxide-layer in silicon photonics, as well as the InGaAsP layer in InP-based PICs and will allow for photonic integration on emerging material platforms such as diamond and SiC.

preprint2014arXiv

Extrinsic Photodiodes for Integrated Mid-Infrared Silicon Photonics

Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths, the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long been used for mid-infrared detection with Si and Ge acting as host materials. Leveraging the dopant-induced sub-bandgap trap-states used in bulk photoconductors for waveguide integrated mid-infrared detectors offers simple processing, integration, and operation throughout the mid-infrared by appropriate choice of dopant. In particular, Si doped with Zn forms two trap levels ~ 0.3 eV and ~ 0.58 eV above the valence band, and has been utilized extensively for cryogenically cooled bulk extrinsic photoconductors. In this letter, we present room temperature operation of Zn+ implanted Si waveguide photodiodes from 2200 nm to 2400 nm, with measured responsivities of up to 87 mA/W and low dark currents of < 10 microamps.

preprint2014arXiv

Wavelength conversion and parametric amplification of optical pulses via quasi-phase-matched FWM in long-period Bragg silicon waveguides

We present a theoretical analysis supported by comprehensive numerical simulations of quasi phase-matched four-wave mixing (FWM) of ultrashort optical pulses that propagate in weakly width-modulated silicon photonic nanowire gratings. Our study reveals that, by properly designing the optical waveguide such that the interacting pulses co-propagate with the same group-velocity, a conversion efficiency enhancement of more than 15 dB, as compared to a uniform waveguide, can readily be achieved. We also analyze the dependence of the conversion efficiency and FWM gain on the pulse width, time delay, walk-off parameter, and grating modulation depth.

preprint2013arXiv

Generation of parabolic similaritons in tapered silicon photonic wires: comparison of pulse dynamics at telecom and mid-IR wavelengths

We study the generation of parabolic self-similar optical pulses in tapered Si photonic nanowires (Si-PhNWs) both at telecom (λ=1.55 μm) and mid-IR (λ=2.2 μm) wavelengths. Our computational study is based on a rigorous theoretical model, which fully describes the influence of linear and nonlinear optical effects on pulse propagation in Si-PhNWs with arbitrarily varying width. Numerical simulations demonstrate that, in the normal dispersion regime, optical pulses evolve naturally into parabolic pulses upon propagating in millimeter-long tapered Si-PhNWs, with the efficiency of this pulse reshaping process being strongly dependent on the spectral and pulse parameter regime in which the device operates, as well as the particular shape of the Si-PhNW.

preprint2012arXiv

Light trapping in a 30-nm organic photovoltaic cell for efficient carrier collection and light absorption

We describe surface patterning strategies that permit high photon-collection efficiency together with high carrier-collection efficiency in an ultra-thin planar heterojunction organic photovoltaic cell. Optimized designs reach up to 50% photon collection efficiency in a P3HT layer of only 30 nm, representing a 3- to 5-fold improvement over an unpatterned cell of the same thickness. We compare the enhancement of light confinement in the active layer with an ITO top layer for TE and TM polarized light, and demonstrate that the light absorption can increase by a factor of 2 due to a gap-plasmon mode in the active layer.