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Richard L. J. Qiu

Richard L. J. Qiu contributes to research discovery and scholarly infrastructure.

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Published work

10 published item(s)

preprint2025arXiv

Res-MoCoDiff: Residual-guided diffusion models for motion artifact correction in brain MRI

Objective. Motion artifacts in brain MRI, mainly from rigid head motion, degrade image quality and hinder downstream applications. Conventional methods to mitigate these artifacts, including repeated acquisitions or motion tracking, impose workflow burdens. This study introduces Res-MoCoDiff, an efficient denoising diffusion probabilistic model specifically designed for MRI motion artifact correction.Approach.Res-MoCoDiff exploits a novel residual error shifting mechanism during the forward diffusion process to incorporate information from motion-corrupted images. This mechanism allows the model to simulate the evolution of noise with a probability distribution closely matching that of the corrupted data, enabling a reverse diffusion process that requires only four steps. The model employs a U-net backbone, with attention layers replaced by Swin Transformer blocks, to enhance robustness across resolutions. Furthermore, the training process integrates a combined l1+l2 loss function, which promotes image sharpness and reduces pixel-level errors. Res-MoCoDiff was evaluated on both an in-silico dataset generated using a realistic motion simulation framework and an in-vivo MR-ART dataset. Comparative analyses were conducted against established methods, including CycleGAN, Pix2pix, and a diffusion model with a vision transformer backbone, using quantitative metrics such as PSNR, SSIM, and NMSE.Main results. The proposed method demonstrated superior performance in removing motion artifacts across minor, moderate, and heavy distortion levels. Res-MoCoDiff consistently achieved the highest SSIM and the lowest NMSE values, with a PSNR of up to 41.91+-2.94 dB for minor distortions. Notably, the average sampling time was reduced to 0.37 seconds per batch of two image slices, compared with 101.74 seconds for conventional approaches.

preprint2024arXiv

Fast MRI Reconstruction Using Deep Learning-based Compressed Sensing: A Systematic Review

Magnetic resonance imaging (MRI) has revolutionized medical imaging, providing a non-invasive and highly detailed look into the human body. However, the long acquisition times of MRI present challenges, causing patient discomfort, motion artifacts, and limiting real-time applications. To address these challenges, researchers are exploring various techniques to reduce acquisition time and improve the overall efficiency of MRI. One such technique is compressed sensing (CS), which reduces data acquisition by leveraging image sparsity in transformed spaces. In recent years, deep learning (DL) has been integrated with CS-MRI, leading to a new framework that has seen remarkable growth. DL-based CS-MRI approaches are proving to be highly effective in accelerating MR imaging without compromising image quality. This review comprehensively examines DL-based CS-MRI techniques, focusing on their role in increasing MR imaging speed. We provide a detailed analysis of each category of DL-based CS-MRI including end-to-end, unroll optimization, self-supervised, and federated learning. Our systematic review highlights significant contributions and underscores the exciting potential of DL in CS-MRI. Additionally, our systematic review efficiently summarizes key results and trends in DL-based CS-MRI including quantitative metrics, the dataset used, acceleration factors, and the progress of and research interest in DL techniques over time. Finally, we discuss potential future directions and the importance of DL-based CS-MRI in the advancement of medical imaging. To facilitate further research in this area, we provide a GitHub repository that includes up-to-date DL-based CS-MRI publications and publicly available datasets - https://github.com/mosaf/Awesome-DL-based-CS-MRI.

preprint2020arXiv

Deep Learning in Multi-organ Segmentation

This paper presents a review of deep learning (DL) in multi-organ segmentation. We summarized the latest DL-based methods for medical image segmentation and applications. These methods were classified into six categories according to their network design. For each category, we listed the surveyed works, highlighted important contributions and identified specific challenges. Following the detailed review of each category, we briefly discussed its achievements, shortcomings and future potentials. We provided a comprehensive comparison among DL-based methods for thoracic and head & neck multiorgan segmentation using benchmark datasets, including the 2017 AAPM Thoracic Auto-segmentation Challenge datasets and 2015 MICCAI Head Neck Auto-Segmentation Challenge datasets.

preprint2020arXiv

Generative Adversarial Network for Image Synthesis

This chapter reviews recent developments of generative adversarial networks (GAN)-based methods for medical and biomedical image synthesis tasks. These methods are classified into conditional GAN and Cycle-GAN according to the network architecture designs. For each category, a literature survey is given, which covers discussions of the network architecture designs, highlights important contributions and identifies specific challenges.

preprint2013arXiv

Ambipolar Surface Conduction in Ternary Topological Insulator Bi_2(Te_{1-x}Se_x)_3 Nanoribbons

We report the composition and gate voltage induced tuning of transport properties in chemically synthesized Bi2(Te1-xSex)3 nanoribbons. It is found that increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature dependent resistance of Bi2(Te1-xSex)3 nanoribbons when x is greater than ~10%. In Bi2(Te1-xSex)3 nanoribbons with x ~20%, gate voltage enables ambipolar modulation of resistance (or conductance) in samples with thickness around or larger than 100nm, indicating significantly enhanced contribution in transport from the gapless surface states.

preprint2013arXiv

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets

Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of topological insulator Bi2Se3 with variable Sb-doping level to control the electron carrier density and surface transport behavior. (Bi1-xSbx)2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ~4 \times 10^13/cm^2 in pure Bi2Se3 (x = 0) to ~2 \times 10^12/cm^2 in (Bi1-xSbx)2Se3 at x ~0.15, while maintaining the metallic transport behavior. At x > ~0.20, a metal-insulator transition (MIT) is observed indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled doping can be a tunable platform for fundamental studies and electronic applications of topological insulator systems.

preprint2013arXiv

One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires

We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to 300K. At low temperatures (T< ~100K), oscillations in the thermopower and power factor concomitant with the stepwise conductance increases are observed as the gate voltage shifts the chemical potential of electrons in InAs nanowire through quasi-one-dimensional (1D) sub-bands. This work experimentally shows the possibility to modulate semiconductor nanowire&#39;s thermoelectric properties through the peaked 1D electronic density of states in the diffusive transport regime, a long-sought goal in nanostructured thermoelectrics research. Moreover, we point out the importance of scattering (or disorder) induced energy level broadening in smearing out the 1D confinement enhanced thermoelectric power factor at practical temperatures (e.g. 300K).

preprint2011arXiv

Connecting the Reentrant Insulating Phase and the Zero Field Metal-Insulator Transition in a 2D Hole System

We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p <p_c +0.15\times10^{10}$/cm$^2$, a reentrant insulating phase (RIP) is observed between the $ν$=1 quantum Hall state and the zero field metallic state and is attributed to the formation of pinned Wigner crystal. Through studying the evolution of the RIP versus 2D hole density by transport and capacitance experiments, we show that the RIP is incompressible and continuously connected to the zero field insulator, suggesting a similar origin for these two phases.

preprint2011arXiv

Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room temperature magneto-electronic applications.

preprint2010arXiv

Magneto-transport Effects in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

Magneto-resistance (MR) of Bi$_2$Se$_3$ nanoribbons is studied over a broad range of temperature ($T$=300K-2K) and under various magnetic field ($B$) orientations. The MR is strongly anisotropic with the perpendicular MR much larger than the longitudinal and transverse MRs. The perpendicular MR exhibits quadratic $B$-dependence in low fields and becomes linear at high $B$. However, when $T$ increases, the perpendicular MR becomes linear over the whole magnetic field range (0-9T) up to room temperature. This unusual linear MR is discussed in the context of the linear quantum MR of the topological surface-states. We also observe the boundary-scattering effect in MR at low temperatures, which indicates that the out-of-plane Fermi momentum is much smaller the in-plane Fermi momentum, excluding the simple three-dimensional Fermi surface picture.