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Richard G. Hennig

Richard G. Hennig contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Data-Augmentation for Graph Neural Network Learning of the Relaxed Energies of Unrelaxed Structures

Computational materials discovery has continually grown in utility over the past decade due to advances in computing power and crystal structure prediction algorithms (CSPA). However, the computational cost of the \textit{ab initio} calculations required by CSPA limits its utility to small unit cells, reducing the compositional and structural space the algorithms can explore. Past studies have bypassed many unneeded \textit{ab initio} calculations by utilizing machine learning methods to predict formation energy and determine the stability of a material. Specifically, graph neural networks display high fidelity in predicting formation energy. Traditionally graph neural networks are trained on large data sets of relaxed structures. Unfortunately, the geometries of unrelaxed candidate structures produced by CSPA often deviate from the relaxed state, which leads to poor predictions hindering the model's ability to filter energetically unfavorable prior to \textit{ab initio} evaluation. This work shows that the prediction error on relaxed structures reduces as training progresses, while the prediction error on unrelaxed structures increases, suggesting an inverse correlation between relaxed and unrelaxed structure prediction accuracy. To remedy this behavior, we propose a simple, physically motivated, computationally cheap perturbation technique that augments training data to improve predictions on unrelaxed structures dramatically. On our test set consisting of 623 Nb-Sr-H hydride structures, we found that training a crystal graph convolutional neural networks, utilizing our augmentation method, reduced the MAE of formation energy prediction by 66\% compared to training with only relaxed structures. We then show how this error reduction can accelerates CSPA by improving the model's ability to filter out energetically unfavorable structures accurately.

preprint2022arXiv

Magnetic molecule tunnel heterojunctions

We characterize molecular magnet heterojunctions in which sublimated CoPc films as thin as 5 nm are sandwiched between transparent conducting bottom-layer indium tin oxide and top-layer soft-landing eutectic GaIn (EGaIn) electrodes. The roughness of the cobalt phthalocyanine (CoPc) films was determined by atomic force microscopy to be on the order of several nanometers, and crystalline ordering of lying-down planar molecules was confirmed by X-ray diffraction. The current-voltage (I-V) characteristics reveal the onset of a superconducting gap at Tc = 6 K, which together with higher temperature fits to a modified Simmons' model, provide incontrovertible evidence for direct quantum mechanical tunneling processes through the magnetic molecules in our heterojunctions. The voltage dependent features in the differential conductance measurements relate to spin states of single molecules or aggregates of molecules and should prove to be important for quantum information device development.

preprint2020arXiv

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the potential of these materials for electronic devices requires a better understanding of how defects control the carrier concentration, character, and mobility. Utilizing a correction scheme developed by Freysoldt and Neugebauer to ensure the appropriate electrostatic boundary conditions for charged defects in 2D materials, we perform density functional theory calculations to compute formation energies and charge transition levels associated with sulfur vacancies in monolayer and layered bulk MoS$_2$. We investigate the convergence of these defect properties with respect to vacuum spacing, in-plane supercell dimensions, and different levels of theory. We also analyze the electronic structures of the defects in different charge states to gain insights into the effect of defects on bonding and magnetism. We predict that both vacancy structures undergo a Jahn-Teller distortion, which helps stabilize the sulfur vacancy in the $-1$ charged state.

preprint2020arXiv

Uncertainty Quantification for Materials Properties in Density Functional Theory with k-Point Density

Many computational databases emerged over the last five years that report material properties calculated with density functional theory. The properties in these databases are commonly calculated to a precision that is set by choice of the basis set and the k-point density for the Brillouin zone integration. We determine how the precision of properties obtained from the Birch equation of state for 29 transition metals and aluminum in the three common structures -- fcc, bcc, and hcp -- correlate with the k-point density and the precision of the energy. We show that the precision of the equilibrium volume, bulk modulus, and the pressure derivative of the bulk modulus correlate comparably well with the k-point density and the precision of the energy, following an approximate power law. We recommend the k-point density as the convergence parameter because it is computationally efficient, easy to use as a direct input parameter, and correlates with property precision at least as well as the energy precision. We predict that common k-point density choices in high throughput DFT databases result in precision for the volume of 0.1%, the bulk modulus of 1%, and the pressure derivative of 10%.