Researcher profile

Rena J. Zieve

Rena J. Zieve contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - Baseline
2works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2019arXiv

Interfacial-Redox-Induced Tuning of Superconductivity in YBa$_{2}$Cu$_{3}$O$_{7-δ}$

Solid state ionic approaches for modifying ion distributions in getter/oxide heterostructures offer exciting potentials to control material properties. Here we report a simple, scalable approach allowing for total control of the superconducting transition in optimally doped YBa$_{2}$Cu$_{3}$O$_{7-δ}$ (YBCO) films via a chemically-driven ionic migration mechanism. Using a thin Gd capping layer of up to 20 nm deposited onto 100 nm thick epitaxial YBCO films, oxygen is found to leach from deep within the YBCO. Progressive reduction of the superconducting transition is observed, with complete suppression possible for a sufficiently thick Gd layer. These effects arise from the combined impact of redox-driven electron doping and modification of the YBCO microstructure due to oxygen migration and depletion. This work demonstrates an effective ionic control of superconductivity in oxides, an interface induced effect that goes well into the quasi-bulk regime, opening up possibilities for electric field manipulation.

preprint2019arXiv

Pressure-Driven Valence Increase and Metallization in Kondo Insulator Ce$_3$Bi$_4$Pt$_3$

We report the results of high pressure x-ray diffraction, x-ray absorption, and electrical transport measurements of Kondo insulator Ce$_3$Bi$_4$Pt$_3$ up to 42 GPa, the highest pressure reached in the study of any Ce-based KI. We observe a smooth decrease in volume and movement toward intermediate Ce valence with pressure, both of which point to increased electron correlations. Despite this, temperature-dependent resistance data show the suppression of the interaction-driven ambient pressure insulating ground state. We also discuss potential ramifications of these results for the predicted topological KI state.