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Regina Dittmann

Regina Dittmann contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

2022 Roadmap on Neuromorphic Computing and Engineering

Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community. https://doi.org/10.1088/2634-4386/ac4a83

preprint2022arXiv

Magnetic interlayer coupling between ferromagnetic SrRuO$_3$ layers through a SrIrO$_3$ spacer

A key element to tailor the properties of magnetic multilayers is the coupling between the individual magnetic layers. In case of skyrmion hosting multilayers, coupling of skyrmions across the magnetic layers is highly desirable. Here the magnetic interlayer coupling was studied in epitaxial all-oxide heterostructures of ferromagnetic perovskite SrRuO$_3$ layers separated by spacers of the strong spin-orbit coupling oxide SrIrO$_3$. This combination of oxide layers is being discussed as a potential candidate system to host Néel skyrmions. First order reversal curve (FORC) measurements were performed in order to distinguish between magnetic switching processes of the individual layers and to disentangle the signal of soft magnetic impurities from the samples$'$ signal. Additionally, FORC investigations enabled to determine whether the coupling between the magnetic layers is ferromagnetic or antiferromagnetic. The observed interlayer coupling strength was weak for all the heterostructures, with SrIrO$_3$ spacers between 2 monolayers and 12 monolayers thick.

preprint2020arXiv

Origin of the hump anomalies in the Hall resistance loops of ultrathin SrRuO$_3$/SrIrO$_3$ multilayers

The proposal that very small Néel skyrmions can form in SrRuO$_3$/SrIrO$_3$ epitaxial bilayers and that the electric field-effect can be used to manipulate these skyrmions in gated devices strongly stimulated the recent research of SrRuO$_3$ heterostructures. A strong interfacial Dzyaloshinskii-Moriya interaction, combined with the breaking of inversion symmetry, was considered as the driving force for the formation of skyrmions in SrRuO$_3$/SrIrO$_3$ bilayers. Here, we investigated nominally symmetric heterostructures in which an ultrathin ferromagnetic SrRuO$_3$ layer is sandwiched between large spin-orbit coupling SrIrO$_3$ layers, for which the conditions are not favorable for the emergence of a net interfacial Dzyaloshinskii-Moriya interaction. Previously the formation of skyrmions in the asymmetric SrRuO$_3$/SrIrO$_3$ bilayers was inferred from anomalous Hall resistance loops showing humplike features that resembled topological Hall effect contributions. Symmetric SrIrO$_3$/SrRuO$_3$/SrIrO$_3$ trilayers do not show hump anomalies in the Hall loops. However, the anomalous Hall resistance loops of symmetric multilayers, in which the trilayer is stacked several times, do exhibit the humplike structures, similar to the asymmetric SrRuO$_3$/SrIrO$_3$ bilayers. The origin of the Hall effect loop anomalies likely resides in unavoidable differences in the electronic and magnetic properties of the individual SrRuO$_3$ layers rather than in the formation of skyrmions.