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Rajib Batabyal

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other

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preprint2022arXiv

Scale-dependent optimized homoepitaxy of InAs(111)A

We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic-scale impurities and the larger-scale surface morphology of molecular beam epitaxy (MBE) grown homoepitaxial InAs(111)A. By keeping a constant substrate temperature and indium flux while increasing the As$_2$ flux, we find two differing MBE growth parameter regions for optimized surface roughness on the macro and atomic scale. In particular, we show that a pure step-flow regime with strong suppression of hillock formation can be achieved, even on substrates without intentional offcut. On the other hand, an indium adatom deficient, low atomic defect surface can be observed for a high hillock density. We identify the main remaining point defect on the latter surface by comparison to STM simulations. Furthermore, we provide a method for extracting root-mean-square surface roughness values and discuss their use for surface quality optimization by comparison to scale-dependent, technologically relevant surface metrics. Finally, mapping the separately optimized regions of the growth parameter space should provide a guide for future device engineering involving epitaxial InAs(111)A growth.

preprint2019arXiv

Spectroscopic Visualization of a Robust Electronic Response of Semiconducting Nanowires to Deposition of Superconducting Islands

Following significant progress in the visualization and characterization of Majorana end modes in hybrid systems of semiconducting nanowires and superconducting islands, much attention is devoted to the investigation of the electronic structure at the buried interface between the semiconductor and the superconductor. The properties of that interface and the structure of the electronic wavefunctions that occupy it determine the functionality and the topological nature of the superconducting state induced therein. Here we study this buried interface by performing spectroscopic mappings of superconducting aluminum islands epitaxially grown in-situ on indium arsenide nanowires. We find unexpected robustness of the hybrid system as the direct contact with the aluminum islands does not lead to any change in the chemical potential of the nanowires, nor does it induce a significant band bending in their vicinity. We attribute this to the presence of surface states bound to the facets of the nanowire. Such surface states, that are present also in bare nanowires prior to aluminum deposition, pin the Fermi-level thus rendering the nanowires resilient to surface perturbations. The aluminum islands further display Coulomb blockade gaps and peaks that signify the formation of a resistive tunneling barrier at the InAs-Al interface. At low energies we identify a potential energy barrier that further suppresses the transmittance through the interface. A corresponding barrier exists in bare semiconductors between surface states and the accumulation layer, induced to maintain charge neutrality. Our observations elucidate the delicate interplay between the resistive nature of the InAs-Al interface and the ability to proximitize superconductivity and tune the chemical potential in semiconductor-superconductor hybrid nanowires.

preprint2016arXiv

Visualizing "Fermi arcs" in the Weyl semimetal TaAs

One of the hallmarks of Weyl semi-metals is the existence of unusual topological surface states known as 'Fermi arcs' [1-3]. The formation of these states is guaranteed by the existence of bulk Weyl points with opposite chirality. Tantalum Arsenide (TaAs) [4-9], a member of the newly discovered family of Weyl semi-metals [4,5], harbors a host of non-topological ('trivial') surface states overlapping in energy with the predicted 12 'Fermi arcs'. This overlap poses a major challenge in identifying the signatures of the arcs [10]. Here we harness the inherently distinct spatial structure of trivial and Fermi arc states to visualize the Fermi arcs for the first time using scanning tunneling microscopy. We do so in four distinct ways, each of which highlights a different aspect of their unusual nature. We reveal their relatively isotropic scattering signature, their energy dispersion and its relation to the bulk Weyl points, their deep bulk penetration relative to that of non-topological surface states and their weak coupling to the atomic structure. The latter is obtained by accounting for the spatial structure of the Bloch wavefunction and its effect on the scattering properties of the electrons off lattice defects in general. It thus provides a novel analysis tool for the spectroscopic characterization of electronic wavefunctions using scanning tunneling microscopy.