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Researcher profile

Haim Beidenkopf

Haim Beidenkopf contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

3 published item(s)

preprint2022arXiv

Progress and prospects in magnetic topological materials

Magnetic topological materials represent a class of compounds whose properties are strongly influenced by the topology of the electronic wavefunctions coupled with the magnetic spin configuration. Such materials can support chiral electronic channels of perfect conduction, and can be used for an array of applications from information storage and control to dissipationless spin and charge transport. Here, we review the theoretical and experimental progress achieved in the field of magnetic topological materials beginning with the theoretical prediction of the Quantum Anomalous Hall Effect without Landau levels, and leading to the recent discoveries of magnetic Weyl semimetals and antiferromagnetic topological insulators. We outline the recent theoretical progress that resulted in the tabulation, for the first time, of all magnetic symmetry group representations and topology. We describe several experiments realizing Chern insulators, Weyl and Dirac magnetic semimetals, and an array of axionic and higher-order topological phases of matter as well as survey future perspectives.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Au-Assisted Substrate-Faceting for Inclined Nanowire Growth

We study the role of gold droplets in the initial stage of nanowire growth via the vapor liquid solid method. Apart from serving as a collections center for growth species, the gold droplets carry an additional crucial role that necessarily precedes the nanowire emergence, that is, they assist the nucleation of nanocraters with strongly faceted 111B side walls. Only once these facets become sufficiently large and regular, the gold droplets start nucleating and guiding the growth of nanowires. We show that this dual role of the gold droplets can be detected and monitored by high energy electron diffraction during growth. Moreover, gold induced formation of craters and the onset of nanowires growth on the 111B facets inside the craters are confirmed by the results of Monte Carlo simulations. The detailed insight into the growth mechanism of inclined nanowires will help to engineer new and complex nanowire based device architectures.

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preprint2019arXiv

Spectroscopic Visualization of a Robust Electronic Response of Semiconducting Nanowires to Deposition of Superconducting Islands

Following significant progress in the visualization and characterization of Majorana end modes in hybrid systems of semiconducting nanowires and superconducting islands, much attention is devoted to the investigation of the electronic structure at the buried interface between the semiconductor and the superconductor. The properties of that interface and the structure of the electronic wavefunctions that occupy it determine the functionality and the topological nature of the superconducting state induced therein. Here we study this buried interface by performing spectroscopic mappings of superconducting aluminum islands epitaxially grown in-situ on indium arsenide nanowires. We find unexpected robustness of the hybrid system as the direct contact with the aluminum islands does not lead to any change in the chemical potential of the nanowires, nor does it induce a significant band bending in their vicinity. We attribute this to the presence of surface states bound to the facets of the nanowire. Such surface states, that are present also in bare nanowires prior to aluminum deposition, pin the Fermi-level thus rendering the nanowires resilient to surface perturbations. The aluminum islands further display Coulomb blockade gaps and peaks that signify the formation of a resistive tunneling barrier at the InAs-Al interface. At low energies we identify a potential energy barrier that further suppresses the transmittance through the interface. A corresponding barrier exists in bare semiconductors between surface states and the accumulation layer, induced to maintain charge neutrality. Our observations elucidate the delicate interplay between the resistive nature of the InAs-Al interface and the ability to proximitize superconductivity and tune the chemical potential in semiconductor-superconductor hybrid nanowires.

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