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Haim Beidenkopf

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cond-mat.mes-hall cond-mat.other cond-mat.mtrl-sci

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preprint2022arXiv

Progress and prospects in magnetic topological materials

Magnetic topological materials represent a class of compounds whose properties are strongly influenced by the topology of the electronic wavefunctions coupled with the magnetic spin configuration. Such materials can support chiral electronic channels of perfect conduction, and can be used for an array of applications from information storage and control to dissipationless spin and charge transport. Here, we review the theoretical and experimental progress achieved in the field of magnetic topological materials beginning with the theoretical prediction of the Quantum Anomalous Hall Effect without Landau levels, and leading to the recent discoveries of magnetic Weyl semimetals and antiferromagnetic topological insulators. We outline the recent theoretical progress that resulted in the tabulation, for the first time, of all magnetic symmetry group representations and topology. We describe several experiments realizing Chern insulators, Weyl and Dirac magnetic semimetals, and an array of axionic and higher-order topological phases of matter as well as survey future perspectives.

preprint2020arXiv

Au-Assisted Substrate-Faceting for Inclined Nanowire Growth

We study the role of gold droplets in the initial stage of nanowire growth via the vapor liquid solid method. Apart from serving as a collections center for growth species, the gold droplets carry an additional crucial role that necessarily precedes the nanowire emergence, that is, they assist the nucleation of nanocraters with strongly faceted 111B side walls. Only once these facets become sufficiently large and regular, the gold droplets start nucleating and guiding the growth of nanowires. We show that this dual role of the gold droplets can be detected and monitored by high energy electron diffraction during growth. Moreover, gold induced formation of craters and the onset of nanowires growth on the 111B facets inside the craters are confirmed by the results of Monte Carlo simulations. The detailed insight into the growth mechanism of inclined nanowires will help to engineer new and complex nanowire based device architectures.

preprint2019arXiv

Spectroscopic Visualization of a Robust Electronic Response of Semiconducting Nanowires to Deposition of Superconducting Islands

Following significant progress in the visualization and characterization of Majorana end modes in hybrid systems of semiconducting nanowires and superconducting islands, much attention is devoted to the investigation of the electronic structure at the buried interface between the semiconductor and the superconductor. The properties of that interface and the structure of the electronic wavefunctions that occupy it determine the functionality and the topological nature of the superconducting state induced therein. Here we study this buried interface by performing spectroscopic mappings of superconducting aluminum islands epitaxially grown in-situ on indium arsenide nanowires. We find unexpected robustness of the hybrid system as the direct contact with the aluminum islands does not lead to any change in the chemical potential of the nanowires, nor does it induce a significant band bending in their vicinity. We attribute this to the presence of surface states bound to the facets of the nanowire. Such surface states, that are present also in bare nanowires prior to aluminum deposition, pin the Fermi-level thus rendering the nanowires resilient to surface perturbations. The aluminum islands further display Coulomb blockade gaps and peaks that signify the formation of a resistive tunneling barrier at the InAs-Al interface. At low energies we identify a potential energy barrier that further suppresses the transmittance through the interface. A corresponding barrier exists in bare semiconductors between surface states and the accumulation layer, induced to maintain charge neutrality. Our observations elucidate the delicate interplay between the resistive nature of the InAs-Al interface and the ability to proximitize superconductivity and tune the chemical potential in semiconductor-superconductor hybrid nanowires.

preprint2016arXiv

Visualizing "Fermi arcs" in the Weyl semimetal TaAs

One of the hallmarks of Weyl semi-metals is the existence of unusual topological surface states known as 'Fermi arcs' [1-3]. The formation of these states is guaranteed by the existence of bulk Weyl points with opposite chirality. Tantalum Arsenide (TaAs) [4-9], a member of the newly discovered family of Weyl semi-metals [4,5], harbors a host of non-topological ('trivial') surface states overlapping in energy with the predicted 12 'Fermi arcs'. This overlap poses a major challenge in identifying the signatures of the arcs [10]. Here we harness the inherently distinct spatial structure of trivial and Fermi arc states to visualize the Fermi arcs for the first time using scanning tunneling microscopy. We do so in four distinct ways, each of which highlights a different aspect of their unusual nature. We reveal their relatively isotropic scattering signature, their energy dispersion and its relation to the bulk Weyl points, their deep bulk penetration relative to that of non-topological surface states and their weak coupling to the atomic structure. The latter is obtained by accounting for the spatial structure of the Bloch wavefunction and its effect on the scattering properties of the electrons off lattice defects in general. It thus provides a novel analysis tool for the spectroscopic characterization of electronic wavefunctions using scanning tunneling microscopy.

preprint2012arXiv

Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator

The breaking of time-reversal symmetry by ferromagnetism is predicted to yield profound changes to the electronic surface states of a topological insulator. Here, we report on a concerted set of structural, magnetic, electrical and spectroscopic measurements of \MBS thin films wherein photoemission and x-ray magnetic circular dichroism studies have recently shown surface ferromagnetism in the temperature range 15 K $\leq T \leq 100$ K, accompanied by a suppressed density of surface states at the Dirac point. Secondary ion mass spectroscopy and scanning tunneling microscopy reveal an inhomogeneous distribution of Mn atoms, with a tendency to segregate towards the sample surface. Magnetometry and anisotropic magnetoresistance measurements are insensitive to the high temperature ferromagnetism seen in surface studies, revealing instead a low temperature ferromagnetic phase at $T \lesssim 5$ K. The absence of both a magneto-optical Kerr effect and anomalous Hall effect suggests that this low temperature ferromagnetism is unlikely to be a homogeneous bulk phase but likely originates in nanoscale near-surface regions of the bulk where magnetic atoms segregate during sample growth. Although the samples are not ideal, with both bulk and surface contributions to electron transport, we measure a magnetoconductance whose behavior is qualitatively consistent with predictions that the opening of a gap in the Dirac spectrum drives quantum corrections to the conductance in topological insulators from the symplectic to the orthogonal class.

preprint2011arXiv

Spatial Fluctuations of Helical Dirac Fermions on the Surface of Topological Insulators

Surfaces of topological insulators host a new class of states with Dirac dispersion and helical spin texture. Potential quantum computing and spintronic applications using these states require manipulation of their electronic properties at the Dirac energy of their band structure by inducing magnetism or superconductivity through doping and proximity effect. Yet, the response of these states near the Dirac energy in their band structure to various perturbations has remained unexplored. Here we use spectroscopic mapping with the scanning tunneling microscope to study their response to magnetic and non-magnetic bulk dopants in Bi2Te3 and Bi2Se3. Far from the Dirac energy helicity provides remarkable resilience to backscattering even in the presence of ferromagnetism. However, approaching the Dirac point, where the surface states' wavelength diverges bulk doping results in pronounced nanoscale spatial fluctuations of energy, momentum, and helicity. Our results and their connection with similar studies of Dirac electrons in graphene demonstrate that while backscattering and localization are absent for Dirac topological surface states, reducing charge defects is required for both tuning the chemical potential to Dirac energy and achieving high electrical mobility for these novel states.

preprint2010arXiv

Transmission of topological surface states through surface barriers

Topological surface states are a class of novel electronic states that are of potential interest in quantum computing or spintronic applications. Unlike conventional two-dimensional electron states, these surface states are expected to be immune to localization and to overcome barriers caused by material imperfection. Previous experiments have demonstrated that topological surface states do not backscatter between equal and opposite momentum states, owing to their chiral spin texture. However, so far there is no evidence that these states in fact transmit through naturally occurring surface defects. Here we use a scanning tunnelling microscope to measure the transmission and reflection probabilities of topological surface states of antimony through naturally occurring crystalline steps separating atomic terraces. In contrast to nontopological surface states of common metals (copper, silver and gold), which are either reflected or absorbed by atomic steps, we show that topological surface states of antimony penetrate such barriers with high probability. This demonstration of the extended nature of antimony's topological surface states suggests that such states may be useful for high current transmission even in the presence of atomic scale irregularities-an electronic feature sought to efficiently interconnect nanoscale devices.