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Researcher profile

Rajendra Singh

Rajendra Singh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

Cavity-Enhanced Raman Scattering from 2D Hybrid Perovskites

Two-dimensional (2D) hybrid organic-inorganic perovskites (HOIPs) are promising candidates for optoelectronic applications due to their efficient light emission properties, and strong dielectric confinement effects. Raman spectroscopy is a versatile, non-contact and often non-destructive technique, widely used to characterize crystalline materials. However, the inherently weak phonon scattering, strong background, and complex nature of the Raman signals from HOIPs present challenges in obtaining reliable signals. Further, the fragile nature of the 2D HOIP crystals results in rapid degradation upon exposure to heat, light and moisture, which presents further difficulty in enhancing Raman scattered photon signals. Herein, we report a novel approach to enhance the weak Raman scattering signals in Ruddlesden-Popper (RP) phase HOIPs by introducing an open-cavity comprising HOIP crystals on a gold substrate. We observe 15x enhancement of the Raman signals due to the Purcell effect inside the high-index HOIP crystals. Our simple approach can be extended to enhance the study of phonon scattering in other HOIP and van der Waals layered crystals.

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preprint2021arXiv

Large-Area Transfer of 2D TMDCs Assisted by Water-soluble layer for Potential Device Applications

Layer transfer offers enormous potential for the industrial implementation of 2D material technology platforms. However, the transfer method used must retain as-grown uniformity and cleanliness in the transferred films for the fabrication of 2D material-based. Additionally, the method used must be capable of large-area transfer to maintain wafer-scale fabrication standards. Here, a facile route to transfer centimeter-scale synthesized 2D TMDCs (3L MoS2, 1L WS2) onto various substrates such as sapphire, SiO2/Si, and flexible substrates (mica, polyimide) has been developed using a water-soluble layer (Na2S/Na2SO4) underneath the as-grown film. The developed transfer process represents a fast, clean, generic, and scalable technique to transfer 2D atomic layers. The key strategy used in this process includes the dissolution of Na2S/Na2SO4 layer due to the penetration of NaOH solution between the growth substrate and hydrophobic 2D TMDC film. As a proof-of-concept device, a broadband photodetector has been fabricated onto transferred 3L MoS2, which shows photoresponse behavior for a wide range of wavelength ranging from NIR to UV. The enhancement in photocurrent was found to be 100 times and 10 times to dark current in the UV and visible region, respectively. This work opens up the pathway towards flexible electronics and optoelectronics.

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preprint2021arXiv

Raman and first-principles study of the pressure induced Mott-insulator to metal transition in bulk FePS$_3$

Recently discovered class of 2D materials based on transition metal phosphorous trichalcogenides exhibit antiferromagnetic ground state, with potential applications in spintronics. Amongst them, FePS$ _{3} $ is a Mott insulator with a band gap of $\sim$ 1.5 eV. This study using Raman spectroscopy along with first-principles density functional theoretical analysis examines the stability of its structure and electronic properties under pressure. Raman spectroscopy reveals two phase transitions at 4.6 GPa and 12 GPa marked by the changes in pressure coefficients of the mode frequencies and the number of symmetry allowed modes. FePS$_3$ transforms from the ambient monoclinic C2/m phase with a band gap of 1.54 eV to another monoclinic C2/m (band gap of 0.1 eV) phase at 4.6 GPa, followed by another transition at 12 GPa to the metallic trigonal P-31m phase. Our work complements recently reported high pressure X-ray diffraction studies.

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