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Rajdeep Adhikari

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cond-mat.mtrl-sci cond-mat.supr-con

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preprint2022arXiv

Effect of impurity scattering on percolation of bosonic islands and reentrant superconductivity in Fe implanted NbN thin films

A reentrant temperature dependence of the thermoresistivity $ρ_{\mathrm{xx}}(T)$ between an onset local superconducting ordering temperature $T_\mathrm{loc}^\mathrm{onset}$ and a global superconducting transition at $T=T_\mathrm{glo}^\mathrm{offset}$ has been reported in disordered conventional 3-dimensional (3D) superconductors. The disorder of these superconductors is a result of either an extrinsic granularity due to grain boundaries, or of an intrinsic granularity ascribable to the electronic disorder originating from impurity dopants. Here, the effects of Fe doping on the electronic properties of sputtered NbN layers with a nominal thickness of 100 nm are studied by means of low- $T$ /high- $μ_{0}H$ magnetotransport measurements. The doping of NbN is achieved $via$ implantation of 35 keV Fe ions. In the as-grown NbN films, a local onset of superconductivity at $T_\mathrm{loc}^\mathrm{onset}=15.72\,\mathrm{K}$ is found, while the global superconducting ordering is achieved at $T_\mathrm{glo}^\mathrm{offset}=15.05\,\mathrm{K}$ , with a normal state resistivity $ρ_{\mathrm{xx}}=22\,{μΩ}\cdot{\mathrm{cm}}$ . Moreover, upon Fe doping of NbN, $ρ_{\mathrm{xx}}=40\,{μΩ}\cdot{\mathrm{cm}}$ is estimated, while $T_\mathrm{loc}^\mathrm{onset}$ and $T_\mathrm{glo}^\mathrm{offset}$ are measured to be 15.1 K and 13.5K, respectively. In Fe:NbN, the intrinsic granularity leads to the emergence of a bosonic insulator state and the normal-metal-to-superconductor transition is accompanied by six different electronic phases characterized by a $N$ -shaped $T$ dependence of $ρ_{\mathrm{xx}}(T)$ . The bosonic insulator state in a $s$ -wave conventional superconductor doped with dilute paramagnetic impurities is predicted to represent a workbench for emergent phenomena, such as gapless superconductivity, triplet Cooper pairings and topological odd frequency superconductivity.

preprint2021arXiv

Cross-plane thermal conductivity of GaN/AlN superlattices

Heterostructures consisting of alternating GaN/AlN epitaxial layers represent the building-blocks of state-of-the-art devices employed for active cooling and energy-saving lightning. Insights into the heat conduction of these structures are essential in the perspective of improving the heat management for prospective applications. Here, the cross-plane (perpendicular to the sample's surface) thermal conductivity of GaN/AlN superlattices as a function of the layers' thickness is established by employing the $3ω$ -method. Moreover, the role of interdiffusion at the interfaces on the phonon scattering is taken into account in the modelling and data treatment. It is found, that the cross-plane thermal conductivity of the epitaxial heterostructures can be driven to values as low as 5.9 W/(m $\cdot$ K) comparable with those reported for amorphous films, thus opening wide perspectives for optimized heat management in III-nitride-based epitaxial multilayers.

preprint2015arXiv

Incorporation of Mn in Al $_{x}$ Ga $_{1-x}$ N probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations

Synchrotron radiation x-ray absorption and emission spectroscopy techniques, complemented by high-resolution transmission electron microscopy methods and density functional theory calculations are employed to investigate the effect of Mn in Al $_{x}$ Ga $_{1-x}$ N:Mn samples with an Al content up to 100%. The atomic and electronic structure of Mn is established together with its local environment and valence state. A dilute alloy without precipitation is obtained for Al $_{x}$ Ga $_{1-x}$ N:Mn with Al concentrations up to 82%, and the surfactant role of Mn in the epitaxial process is confirmed.

preprint2014arXiv

Mn as surfactant for the self-assembling of Al $_x$ Ga $_{1-x}$ N/GaN layered heterostructures

The structural analysis of GaN and Al $_x$ Ga $_{1-x}$ N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process, and in particular the incorporation of Al, the morphology of the surface, and the plastic relaxation of Al $_x$ Ga $_{1-x}$ N on GaN. Moreover, the doping with Mn promotes the formation of layered Al $_x$ Ga $_{1-x}$ N/GaN superlattice-like heterostructures opening wide perspective for controlling the segregation of ternary alloys during the crystal growth and for fostering the self-assembling of functional layered structures.

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Rajdeep Adhikari

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4 publications

Effect of impurity scattering on percolation of bosonic islands and reentrant superconductivity in Fe implanted NbN thin films

Cross-plane thermal conductivity of GaN/AlN superlattices

Incorporation of Mn in Al $_{x}$ Ga $_{1-x}$ N probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations

Mn as surfactant for the self-assembling of Al $_x$ Ga $_{1-x}$ N/GaN layered heterostructures

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Rajdeep Adhikari

Research overview

Is this your work?

4 publications

Effect of impurity scattering on percolation of bosonic islands and reentrant superconductivity in Fe implanted NbN thin films

Cross-plane thermal conductivity of GaN/AlN superlattices

Incorporation of Mn in Alx_{x}x​Ga1−x_{1-x}1−x​N probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations

Mn as surfactant for the self-assembling of Alx_xx​Ga1−x_{1-x}1−x​N/GaN layered heterostructures

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Incorporation of Mn in Al $_{x}$ Ga $_{1-x}$ N probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations

Mn as surfactant for the self-assembling of Al $_x$ Ga $_{1-x}$ N/GaN layered heterostructures