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Raihan Sayeed Khan

Raihan Sayeed Khan contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2021arXiv

Phase Change Logic via Thermal Cross-Talk for Computation in Memory

We have computationally demonstrated logic function implementations using lateral and vertical multi-contact phase change devices integrated with CMOS circuitry, which use thermal cross-talk as a coupling mechanism to implement logic functions at smaller CMOS footprints. Thermal-crosstalk during the write operations is utilized to recrystallize the previously amorphized regions to achieve toggle operations. Amorphized regions formed between different pairs of write contacts are utilized to isolate read contacts. Typical expected reduction in CMOS footprint is ~ 50% using the described approach for toggle-multiplexing, JK-multiplexing and 2x2 routing. The switching speeds of the phase change devices are in the order of nanoseconds and are inherently non-volatile. An electro-thermal modeling framework with dynamic materials models are used to capture the device dynamics, and current and voltage requirements.

preprint2020arXiv

Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress

We observed resistance drift in 125 K - 300 K temperature range in melt quenched amorphous Ge2Sb2Te5 line-cells with length x width x thickness = ~500 nm x ~100 nm x ~ 50 nm. Drift coefficients measured using small voltage sweeps appear to decrease from 0.12 +/- 0.029 at 300 K to 0.075 +/- 0.006 at 125 K. The current-voltage characteristics of the amorphized cells measured in the 85 K - 300 K using high-voltage sweeps (0 to ~25 V) show a combination of a linear, low-field exponential and high-field exponential conduction mechanisms, all of which are strong functions of temperature. The very first high-voltage sweep after amorphization (with electric fields up to ~70% of the breakdown field) shows clear hysteresis in the current-voltage characteristics due to accelerated drift, while the consecutive sweeps show stable characteristics. Stabilization was achieved with 50 nA compliance current (current densities ~104 A/cm^2), preventing appreciable self-heating in the cells. The observed acceleration and stoppage of the resistance drift with the application of high electric fields is attributed to changes in the electrostatic potential profile within amorphous Ge2Sb2Te5 due to trapped charges, reducing tunneling current. Stable current-voltage characteristics are used to extract carrier activation energies for the conduction mechanisms in 85 K - 300 K temperature range. The carrier activation energy associated with linear current-voltage response is extracted to be 331 +/- 5 meV in 200 - 300 K range, while carrier activation energies of 233 +/- 2 meV and 109 +/- 5 meV are extracted in 85 K to 300 K range for the mechanisms that give exponential current-voltage responses.

preprint2020arXiv

Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures and Its Response to Photoexcitation

Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported power-law behavior with drift coefficients in the 0.07 to 0.11 range in dark. While these drift coefficients measured in dark are similar to commonly observed drift coefficients (~0.1) at and above room temperature, measurements under light show a significantly lower drift coefficient (0.05 under illumination versus 0.09 in dark at 150K). Periodic on/off switching of light shows sudden decrease/increase of resistance, attributed to photo-excited carriers, followed by a very slow response (~30 minutes at 150 K) attributed to contribution of charge traps. Continuation of the resistance drift at low temperatures and the observed photo-response suggest that resistance drift in amorphous phase change materials is predominantly an electronic process.

preprint2020arXiv

Scaling of Multi-contact Phase Change Device for Toggle Logic Operations

Scaling of two dimensional six-contact phase change devices that can perform toggle logic operations is analyzed through 2D electrothermal simulations with dynamic materials modeling, integrated with CMOS access circuitry. Toggle configurations are achieved through a combination of isolation of some contacts from others using amorphous regions and coupling between different regions via thermal crosstalk. Use of thermal crosstalk as a coupling mechanism in a multi-contact device in the memory layer allows implementation of analog routing and digital logic operations at a significantly lower transistor count, with the added benefit of non-volatility. Simulation results show approximately linear improvement in peak current and voltage requirements with thickness scaling.